SSE9575 -15 A, -60 V, RDS(ON) 90 mΩ P-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente DESCRIPTION The SSE9575 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. FEATURES z z z Simple Drive Requirement Lower On-resistance Fast Switching Characteristic PACKAGE DIMENSIONS REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 4.40 4. 80 c1 1.25 b 0.76 1.00 b1 1.17 1.45 1.47 c 0.36 0.50 L 13.25 14.25 D 8.60 9.00 e E 9.80 10.4 L1 2.60 2.89 L4 14.7 15.3 Ø 3.71 3.96 L5 6.20 6.60 A1 2.60 2.80 2.54 REF. ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±25 V Drain Current ,VGS@ 10V ID @Ta=25℃ -15 A 3 ID @Ta=100℃ -9.5 A IDM -45 A PD @Ta=25℃ 36 W Tj, Tstg -55 ~ +150 ℃ 0.29 W/℃ Symbol Value Unit 3 Drain Current ,VGS@ 10V 1, Pulsed Drain Current Power Dissipation Operating Junction and Storage Temperature Range Linear Derating Factor THERMAL DATA Parameter Thermal Resistance Junction-case Max. Rθj-case 3.5 ℃ /W Thermal Resistance Junction-ambient Max. Rθj-amb 125 ℃ /W 01-June-2003 Rev. A Page 1 of 4 SSE9575 -15 A, -60 V, RDS(ON) 90 mΩ P-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit BVDSS -60 - - V - -0.04 - VGS(th) -1.0 - -3.0 V VDS=VGS, ID=250uA gfs - 7 - S VDS=-15V, ID=-3.5A IGSS - - ±100 nA VGS= ±25V - - -1 uA VDS=-60V, VGS=0 - - -25 uA VDS=-48V, VGS=0 - - 90 - - 120 Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage △ BVDSS/△Tj Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25℃) Drain-Source Leakage Current(Tj=150℃) Static Drain-Source On-Resistance2 IDSS RDS(ON) Test Conditions VGS=0, ID=250uA V/℃ Reference to 25℃, ID=-1mA mΩ VGS=-10V, ID=-12A VGS=-4.5V, ID=-9A Total Gate Charge2 Qg - 17 27 Gate-Source Charge Qgs - 5 - Gate-Drain (“Miller”) Change Qgd - 6 - Td(on) - 10 - Tr - 19 - Td(off) - 46 - Tf - 53 - Input Capacitance Ciss - 1660 2660 Output Capacitance Coss - 160 - Reverse Transfer Capacitance Crss - 100 - Symbol Min. Typ. Max. Unit VSD - - -1.2 V IS=1.7A, VGS=0, Tj=25℃ Reverse Recovery Time Trr - 56 - ns Reverse Recovery Charge IS - 159 - nC IS = -9A, VGS = 0V, dl/dt = 100A/us Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time nC ID=-9A VDS=-48V VGS=-4.5V ns VDS=-30V ID=-9A VGS=-10V RG=3.3Ω RD=3.3Ω pF VGS=0V VDS=-25V f=1.0MHz SOURCE-DRAIN DIODE Parameter Forward On Voltage2 2 Test Conditions Notes: 1. Pulse width limited by safe operating area. 2. Pulse width≦300us, duty cycle≦2%. 01-June-2003 Rev. A Page 2 of 4 SSE9575 Elektronische Bauelemente -15 A, -60 V, RDS(ON) 90 mΩ P-Channel Enhancement Mode Power Mos.FET CHARACTERISTIC CURVE 01-June-2003 Rev. A Page 3 of 4 SSE9575 Elektronische Bauelemente -15 A, -60 V, RDS(ON) 90 mΩ P-Channel Enhancement Mode Power Mos.FET f=1.0MHz 01-June-2003 Rev. A Page 4 of 4