SSE9971
25A, 60V,RDS(ON)36m Ω
N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
RoHS Compliant Product
Description
The SSE9971 provide the designer with the best combination
of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The TO-220 is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters and high efficiency switching
circuit.
Features
* Low On-Resistance
* Simple Drive Requirement
REF.
A
b
c
D
E
L4
L5
D
Millimeter
Min.
Max.
4.40
4.80
0.76
1.00
0.36
0.50
8.60
9.00
9.80
10.4
14.7
15.3
6.20
6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min.
Max.
1.25
1.45
1.17
1.47
13.25
14.25
2.54 REF.
2.60
2.89
3.71
3.96
2.60
2.80
G
S
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
o
Ratings
Unit
60
V
± 20
V
Continuous Drain Current,VGS@10V
ID@TC=25 C
25
A
Continuous Drain Current,VGS@10V
o
ID@TC=100C
16
A
IDM
80
A
39
W
0.31
W/ C
Pulsed Drain Current
1
Total Power Dissipation
o
PD@TC=25 C
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
o
o
C
-55~+150
Thermal Data
Symbol
Parameter
Thermal Resistance Junction-case
Max.
Thermal Resistance Junction-ambient
Max.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Rthj-c
Rthj-a
Ratings
Unit
3.2
o
62
o
C /W
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SSE9971
25A, 60V,RDS(ON)36m Ω
N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Symbol
Min.
Typ.
BVDSS
60
_
BVDS/ Tj
_
0.05
VGS(th)
1.0
_
3.0
V
VDS=VGS, ID=250uA
IGSS
_
_
±100
nA
VGS=±20V
_
_
10
uA
VDS=60V,VGS=0
_
_
25
uA
VDS=48V,VGS=0
_
_
36
o
Drain-Source Leakage Current (Tj=25 C )
o
Drain-Source Leakage Current(Tj=150C)
Static Drain-Source On-Resistance
2
IDSS
RD S (O N )
Max.
_
V
_
V/ C
_
_
50
Total Gate Charge2
Qg
_
18
30
Gate-Source Charge
Qgs
_
6
_
Gate-Drain ("Miller") Charge
Qgd
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
_
11
_
Td(ON)
_
9
_
Tr
_
24
_
Td(Off)
_
26
_
Tf
_
7
_
Ciss
_
_
1700
Unit
o
mΩ
Test Condition
VGS=0V, ID=250uA
o
Reference to 25 C, ID=1mA
VGS=10V, ID=18A
VGS=4.5V, ID=12A
nC
ID=18A
VDS=48V
VGS= 4.5V
VDD=30V
ID=18A
nS
VGS=10V
RG=3.3Ω
RD=1.67Ω
2700
pF
VGS=0V
VDS=25V
_
S
VDS=10V, ID=18A
Typ.
Max.
Unit
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
_
Forward Transconductance
Gfs
_
17
Symbol
Min.
160
110
_
f=1.0MHz
_
Source-Drain Diode
Parameter
Test Condition
Forward On Voltage 2
VSD
_
_
1.2
V
IS=25 A, VGS=0V
Reverse Recovery Time
Trr
_
37
_
nS
38
_
nC
Is=18A,VGS=0V,
dl/dt=100A/us
Reverse Recovery Charge
Qrr
_
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width≦300us, dutycycle≦2%.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SSE9971
Elektronische Bauelemente
25A, 60V,RDS(ON)36m Ω
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Any changing of specification will not be informed individual
Page 3 of 4
SSE9971
Elektronische Bauelemente
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
25A, 60V,RDS(ON)36m Ω
N-Channel Enhancement Mode Power Mos.FET
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4