SSF8521 DESCRIPTION The SSF8521 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Schematic diagram GENERAL FEATURES ● MOSFET VDS = -20V,ID = -4.4A RDS(ON) < 170mΩ @ VGS=-1.8V RDS(ON) < 110mΩ @ VGS=-2.5V RDS(ON) < 80mΩ @ VGS=-4.5V SCHOTTKY VR = 20V, IF = 4.1A, VF<0.575V @ 1.0A ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●DC-DC conversion applications ●Load switch ●Power management DFN3X2-8L Bottom View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape width Quantity 8521 SSF8521 DFN3X2-8L － － － ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol MOSFET Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V ID -4.4 A IDM -13 A Drain Current-Continuous@ Current-Pulsed (Note 1) Schottky Unit Schottky reverse voltage VR 20 V Continuous Forward Current IF 4.1 A Maximum Power Dissipation PD 2.1 TJ,TSTG -55 To 150 Operating Junction and Storage Temperature Range W -55 To 150 ℃ THERMAL CHARACTERISTICS ©Silikron Semiconductor CO.,LTD 2008.12.1 Version : 1.1 page 1 of 5 A Good-Ark Company SSF8521 MOSFET Thermal Resistance, Junction-to-Ambient (Note 2) RθJA 100 ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition ℃/W Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -20 V Zero Gate Voltage Drain Current IDSS VDS=-16V,VGS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±8V,VDS=0V ±100 nA VGS(th) VDS=VGS,ID=-250μA -1.2 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance RDS(ON) Forward Transconductance gFS -0.45 VGS=-4.5V, ID=-3.2A 64 80 VGS=-2.5V, ID=-2.2A 85 110 VGS=-1.8V, ID=-1.0A 120 170 VDS=-10V,ID=-2.9A 8 S 680 PF 100 PF mΩ DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss 70 PF Turn-on Delay Time td(on) 5.8 nS Turn-on Rise Time tr 11.7 nS 16 nS VDS=-10V,VGS=0V, F=1.0MHz SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time td(off) VDD=-10V,ID=-3.2A VGS=-4.5V,RGEN=2.4Ω Turn-Off Fall Time tf 12.4 nS Total Gate Charge Qg 7.4 nC Gate-Source Charge Qgs 1.4 nC Gate-Drain Charge Qgd 2.5 nC VDS=-10V,ID=-3.2A,VGS=-4.5V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-2.5A -0.8 Reverse Recovery Time Trr 13.5 nS Reverse Recovery Charge Qrr VGS = 0 V, IS = −1.0 A , dIS/dt = 100 A/us 6.5 nC ©Silikron Semiconductor CO.,LTD 2008.12.1 Version : 1.1 -1.2 V page 2 of 5 A Good-Ark Company SSF8521 SCHOTTKY DIODE PARAMETERS Forward Voltage Drop VF IF=1.0A Maximum reverse leakage current Irm VR=20V 0.51 0.575 V 5 uA NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr Vdd td(on) Vin Vgs Rgen td(off) Rl D Vout toff tf 90% VOUT 90% INVERTED 10% 10% G 90% VIN S 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms ZθJA Normalized Transient Thermal Resistance Figure1:Switching Test Circuit Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedanc ©Silikron Semiconductor CO.,LTD 2008.12.1 Version : 1.1 page 3 of 5 A Good-Ark Company SSF8521 DFN3X2-8L PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) COMMON DIMENSIONS(MM) PKG. W:VERY VERY THIN REF. MIN. NOM. MAX. A 0.70 0.75 0.80 A1 0.00 — 0.05 A3 0.2 REF. D 2.95 3.00 3.05 E 1.95 2.00 2.05 b 0.25 0.30 0.35 L 0.28 0.35 0.43 D2 0.77 0.92 1.02 E2 0.20 0.30 0.40 e 0.65 BCS. NOTES： 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exac ©Silikron Semiconductor CO.,LTD 2008.12.1 Version : 1.1 page 4 of 5 A Good-Ark Company SSF8521 ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. 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Specifications and information herein are subject to change without notice. ©Silikron Semiconductor CO.,LTD 2008.12.1 Version : 1.1 page 5 of 5 A Good-Ark Company