SSM0410 3.5 A, 100V, RDS(ON) 220mΩ N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSM0410 provide the designer with best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The SOT-223 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES SOT-223 Fast Switching Low On-resistance Logic Level Compatible A M 4 Top View CB 1 2 K MARKING E L 3 D F G H J Drain REF. Gate A B C D E F Source Millimeter Min. Max. 6.20 6.70 6.70 7.30 3.30 3.70 1.42 1.90 4.50 4.70 0.60 0.82 REF. G H J K L M Millimeter Min. Max. 0.10 0.25 0.35 2.30 REF. 2.90 3.10 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) SYMBOL RATING UNIT Drain – Source Voltage PARAMETER VDS 100 V Gate – Source Voltage VGS ±20 V 3.5 A 2.2 A 3 Continuous Drain Current , VGS@5V TA = 25°C TA = 70°C ID 1,2 IDM 14 A Total Power Dissipation PD 2.7 W 0.02 W/°C TJ, TSTG -65~150 °C 45 °C/W Pulsed Drain Current Linear Derating Factor Operating Junction & Storage Temperature Range THERMAL DATA Maximum Junction–Ambient http://www.SeCoSGmbH.com/ 11-May-2010 Rev. A 3 RθJA Any changes of specification will not be informed individually. Page 1 of 4 SSM0410 3.5 A, 100V, RDS(ON) 220mΩ N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) SYMBOL MIN TYP MAX UNIT Drain-Source Breakdown Voltage PARAMETER BVDSS 100 - - V Gate Threshold Voltage TEST CONDITION VGS=0V, ID =1mA VGS(TH) 1.0 - 2.5 V VDS= 10V, ID =1mA Forward Transconductance gFS - 4.0 - S VDS=10V, ID=2.5A Gate-Source Leakage Current IGSS - - ±100 nA VGS=±20V Drain-Source Leakage Current IDSS μA - - 10 - - 0.22 - - 0.28 Qg - 11.2 - Gate-Source Charge Qgs - 4.4 - Gate-Drain (“Miller”) Charge Qgd - 3.0 - I D=3.5A VDD=30V Drain-Source On Resistance Total Gate Charge 2 Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time RDS(ON) Td(ON) - 9 - Tr - 9.4 - Td(OFF) - 26.8 - Tf - 2.6 - Input Capacitance CISS - 975 - Output Capacitance COSS - 38 - Reverse Transfer Capacitance CRSS - 27 - VDS=100V, VGS=0V VGS=10V, ID=2.6A Ω VGS=5.0V, ID=1.7A V GS=5V nC VDS=80V V GS=10V nS I D=1A RG=6Ω, RL=30Ω VDS=25V pF VGS=0V f=1MHz SOURCE-DRAIN DIODE Forward On Voltage 3 VSD - - 1.5 V VGS=0V, IS=3.5A Note: 1. Pulse width limited by Maximum junction temperature. 2. Pulse width ≦ 300 μs, Duty cycle ≦ 2% 2 3. Surface mounted on 1 in copper pad of FR4 board; 120°C/W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ 11-May-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSM0410 Elektronische Bauelemente 3.5 A, 100V, RDS(ON) 220mΩ N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 11-May-2010 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSM0410 Elektronische Bauelemente 3.5 A, 100V, RDS(ON) 220mΩ N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 11-May-2010 Rev. A Any changes of specification will not be informed individually. Page 4 of 4