SSM3J14T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J14T Power Management Switch DC-DC Converters · · · Unit: mm Suitable for high-density mounting due to compact package Low on Resistance : Ron = 145 mΩ (max) (@VGS = −4.5 V) : Ron = 85 mΩ (max) (@VGS = −10 V) High-speed switching Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -30 V Gate-Source voltage VGSS ±20 V ID -2.7 DC Drain current IDP Pulse (Note 2) t = 10 s 1.25 (Note 1) 0.7 Channel temperature Tch Storage temperature range Tstg Drain power dissipation PD A -5.4 W JEDEC ― 150 °C JEITA ― -55 to 150 °C TOSHIBA Note 1: Mounted on FR4 board 2 (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm ) 2-3S1A Weight: 10 mg (typ.) Note 2: The pulse width limited by maximum channel temperature. Marking Equivalent Circuit 3 3 KDL 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account 1 2002-04-17 SSM3J14T Electrical Characteristics (Ta = 25°C) Characteristic Symbol Gate leakage current IGSS Drain-source breakdown voltage Drain cut-off current Test Condition VGS = ±16 V, VDS = 0 Typ. Max Unit ¾ ¾ ±1 mA V (BR) DSS ID = -1 mA, VGS = 0 -30 ¾ ¾ V V (BR) DSX ID = -1 mA, VGS = 20 V -15 ¾ ¾ V IDSS VDS = -30 V, VGS = 0 ¾ ¾ -1 mA -0.8 ¾ -2.0 V (Note 3) 2.0 ¾ ¾ S (Note 3) ¾ 63 85 ID = -1.35 A, VGS = -4.5 V (Note 3) ¾ 106 145 ID = -1.35 A, VGS = -4.0 V (Note 3) ¾ 120 170 Gate threshold voltage Vth VDS = -5 V, ID = -0.1 mA Forward transfer admittance |Yfs| VDS = -5 V, ID = -1.35 A ID = -1.35 A, VGS = -10 V Drain-source on resistance Min RDS (ON) mW Input capacitance Ciss VDS = -15 V, VGS = 0, f = 1 MHz ¾ 413 ¾ pF Reverse transfer capacitance Crss VDS = -15 V, VGS = 0, f = 1 MHz ¾ 77 ¾ pF Output capacitance Coss VDS = -15 V, VGS = 0, f = 1 MHz ¾ 113 ¾ pF Switching time Turn-on time ton VDD = -15 V, ID = -1 A ¾ 29 ¾ Turn-off time toff VGS = 0~-4 V, RG = 10 W ¾ 29 ¾ ns Note 3: Pulse test Switching Time Test Circuit (a) Test circuit 0 OUT IN RG -4 V (b) VIN 10 ms VDD = -10 V RG = 4.7 W D.U. < = 1% VIN: tr, tf < 5 ns Common source Ta = 25°C 0V 10% 90% -4 V VDS (ON) 90% (c) VOUT VDD VDD tr ton 10% tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration for using the device. VGS recommended voltage of -4 V or higher to turn on this product. 2 2002-04-17 SSM3J14T ID – VDS ID – VGS -6 -10000 -5 V -4 V -3.5 V (mA) -4 Common source VDS = -5 V Ta = 25°C -100 ID -3 V Drain current Drain current -1000 Common source Ta = 25°C ID (A) -10 V -2 VGS = -2.5V -10 100°C -25°C -1 -0.1 0 0 -0.5 -1 -1.5 Drain-source voltage VDS -0.01 0 -2 (V) -1 RDS (ON) –ID VGS -4 (V) RDS (ON) – VGS 1000 Common source Common source Ta = 25°C ID = -1.35 A Drain-Source on resistance RDS (ON) (mW) Drain-Source on resistance RDS (ON) (mW) -3 Gate-source voltage 300 250 -2 200 VGS = -4 V 150 -4.5 V 100 50 25°C 100 Ta = 100°C -25°C -10 V 0 0 -1 -2 -3 -4 Drain current ID -5 -6 10 0 -7 (A) -5 -10 -15 Gate-source voltage VGS -20 (V) |Yfs| – ID RDS (ON) – Ta 300 Common source 10 ID = -1.35 A Forward transfer admittance |Yfs| (S) Drain-Source on resistance RDS (ON) (mW) 250 200 VGS = -4 V 150 -4.5 V 100 -10 V 50 0 -25 0 25 50 75 100 125 3 1 0.3 0.03 -0.01 150 Ambient temperature Ta (°C) Common source 0.1 VDS = -5 V Ta = 25°C -0.1 Drain current 3 -1 ID -10 (A) 2002-04-17 SSM3J14T Vth – Ta C – VDS -1.8 Common source Common source VDS = -5 V ID = -0.1 mA (pF) -1.4 VGS = 0 f = 1 MHz Ta = 25°C 600 -1.2 Capacitance C (V) -1.6 Gate threshold voltage Vth 700 -1.0 -0.8 -0.6 500 400 Ciss 300 200 -0.4 Coss Crss 100 -0.2 0 -25 0 25 50 75 100 125 0 0 150 -5 -15 -10 Ambient temperature Ta (°C) Drain-source voltage -3 100 toff 30 ton 10 tr -0.1 -1 Drain current ID -10 (V) S -1 0.2 0.4 0.6 0.8 1 PD – Ta Dynamic input characteristic 1.5 Common source -8 Ta = 25°C PD -12 V Drain power dissipation VDD = -24 V -6 -4 -2 2 4 6 8 10 Total gate charge Qg (nC) (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 645 mm2） 1 DC 0.5 0 0 12 Mounted on FR4 board t = 10 s (W) ID = -2.7 A VGS (V) VDS G -2 0 0 (A) -10 Gate-source voltage (V) D Ta = 25°C Drain-source voltage 0 0 VDS -35 Common source VGS = 0 (A) 300 Drain reverse current IDR (ns) t Switching time Common source VDD = -15 V VGS = 0~-4 V Ta = 25°C RG = 10 W 3 -0.01 -30 IDR – VDS t – ID 1000 tf -25 -20 50 100 150 200 Ambient temperature Ta (°C) 4 2002-04-17 SSM3J14T rth – tw Single pulse 100 rth (°C /W) Transient thermal impedance 300 Mounted on FR4 board (25.4 mm ´ 25.4 mm ´ 1.6 t, 2 Cu Pad: 645 mm ) 30 10 3 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe operating area -10 ID max (pulse) 1 ms* -1 Drain current 10 ms* 10 s* ID (A) I max (continuous) -3 D DC operation Ta = 25°C -0.3 Mounted on FR4 board -0.1 (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 645 mm2) -0.03 *: Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. -0.01 -0.1 -0.3 -1 VDSS max -3 Drain-source voltage -10 VDS -30 -100 (V) 5 2002-04-17 SSM3J14T RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2002-04-17