TOSHIBA SSM3J15CT

SSM3J15CT
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J15CT
High-Speed Switching Applications
Analog Switch Applications
Optimum for high-density mounting in small packages
•
Low ON-resistance : Ron = 12 Ω (max) (@VGS = −4 V)
: Ron = 32 Ω (max) (@VGS = −2.5 V)
Unit: mm
0.6±0.05
0.5±0.03
Absolute Maximum Ratings (Ta = 25°C)
Symbol
Rating
Unit
Drain-Source voltage
VDS
−30
V
Gate-Source voltage
VGSS
±20
V
DC
ID
−100
Pulse
IDP
−200
PD (Note 1)
100
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
0.65±0.02
３
1.0±0.05
Characteristics
Note:
0.05±0.03
0.35±0.02
0.15±0.03
mA
0.38 +0.02
-0.03
Drain power dissipation (Ta = 25°C)
２
0.25±0.03
１
Drain current
0.05±0.03
0.25±0.03
•
CST3
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
-
JEITA
-
TOSHIBA
2-1J1B
Weight: 0.75 mg (typ.)
Note 1: Mounted on an FR4 board
2
(10 mm × 10 mm × 1.0 t, Cu Pad: 100 mm )
Marking (Top View)
Polarity mark
S1
Pin Condition (Top View)
Equivalent Circuit
Polarity mark (on the top)
3
1
3
2
1. Gate
2. Source
3. Drain
1
2
*Electrodes: on the bottom
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, ensure that the environment is protected
against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come
into direct contact with devices should be made of anti-static materials.
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SSM3J15CT
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
MIN.
TYP.
MAX.
UNIT
IGSS
VGS = ±16 V, VDS = 0
⎯
⎯
±1
μA
V (BR) DSS
ID = −0.1 mA, VGS = 0
−30
⎯
⎯
V
IDSS
VDS = −30 V, VGS = 0
⎯
⎯
−1
μA
Gate leakage current
Drain-Source breakdown voltage
Test Condition
Drain cut-off current
Vth
VDS = −3 V, ID = −0.1 mA
−1.1
⎯
−1.7
V
Forward transfer admittance
⎪Yfs⎪
VDS = −3 V, ID = −10 mA
20
⎯
⎯
mS
Drain-Source ON-resistance
RDS (ON)
ID = −10 mA, VGS = −4 V
⎯
8
12
ID = −1 mA, VGS = −2.5 V
⎯
14
32
⎯
9.1
⎯
pF
⎯
3.5
⎯
pF
⎯
8.6
⎯
pF
⎯
65
⎯
⎯
175
⎯
Gate threshold voltage
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Switching time
Turn-on time
ton
Turn-off time
toff
VDS = −3 V, VGS = 0, f = 1 MHz
VDD = −5 V, ID = −10 mA,
VGS = 0~−5 V
Ω
ns
Switching Time Test Circuit
(a) Test circuit
0
OUT
(b) VIN
0V
10%
IN
50 Ω
−5V
10 μs
VDD
90%
−5 V
RL
(c) VOUT
VDD = −5 V
Duty <
= 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
VDS (ON)
90%
10%
VDD
tr
ton
tf
toff
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -100 μA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
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SSM3J15CT
ID - VDS
-250
ID - VGS
-1000
Common Source
Ta=25°C
-10 -7
-5
-200
Common Source
VDS=-3V
-100
D rain C urrent ID (m A)
-150
-3.3
-100
-3.0
-2.7
-50
VGS=-2.3V
0
-0.5
-1
-1.5
Drain-Source Voltage VDS(V)
0
-1
-2
-3
-4
Gate-Source Voltage VGS(V)
30
20
VGS=-2.5V
-4V
-5
RDS(ON) - VGS
20
D rain-Sourc e ON -res is tanc e R D S(ON ) (Ω )
D rain-Sourc e ON -res is tanc e R D S(ON ) (Ω )
-25°C
-0.01
Common Source
Ta=25°C
10
25°C
-1
-2
RDS(ON) - ID
40
Ta=100°C
-10
-0.1
-2.5
0
Source Common
ID=-1mA
18
16
14
12
10
Ta=100°C
8
6
25°C
4
-25°C
2
0
0
-1
-10
-100
Drain Current ID(mA)
-1000
0
-2
-4
-6
-8
Gate-Source Voltage VGS (V)
RDS(ON) - Ta
30
-10
Vth - Ta
-2
Common Source
20
VGS=-2.5V,ID=-1mA
10
Common Source
ID=-0.1mA
VDS=-3V
-1.8
G ate thres hold Voltage Vth(V)
D rain-Sourc e ON -res is tanc e R D S(ON ) (Ω )
D rain C urrent ID (m A)
-4
-4V,-10mA
-1.6
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
-25
0
25
50
75
100
125
Ambient temparature Ta(°C)
0
-25
150
3
0
25
50
75
100
Ambient temparature Ta(°C)
125
150
2007-11-01
SSM3J15CT
|Yfs| - ID
IDR - VDS
-250
Common Source
VDS=-3V
Ta=25°C
Drain reverse current IDR (mA)
Forward transfer admittance
|Yfs| (mS)
1000
100
10
1
-200
-150
-100
-50
0
-1
-10
-100
Drain current ID (mA)
-1000
0
C - VDS
100
0.2
Common Source
VGS=0V
f=1MHz
Ta=25°C
toff
10
Ciss
Coss
1000
100
0.4
0.6
0.8
1
Drain-Source voltage VDS (V)
1.2
1.4
t - ID
10000
Switching time　t (ns)
Capacitance C (pF)
Common Source
VGS=0V
Ta=25°C
Common Source
VDD=-5V
VGS=0~-5V
Ta=25°C
tf
ton
tr
Crss
1
-0.1
-1
-10
Drain-Source voltage VDS (V)
10
-0.1
-100
-1
-10
Drain Current ID (mA)
-100
PD - Ta
Drain power dissipation PD(mW)
250
mounted on FR4 board
(10mm×10mm×1.0t
Cu Pad:100mm2)
200
150
100
50
0
0
20
40
60
80
100
120
140
160
Ambient temperature (°C)
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SSM3J15CT
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2007-11-01