SSM3J16TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low on-resistance : Ron = 8 Ω (max) (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V) : Ron = 45 Ω (max) (@VGS = −1.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS −20 V Gate-Source voltage VGSS ±10 V DC ID −100 Pulse IDP −200 Drain power dissipation (Ta = 25°C) PD 100 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current mA 1: Gate 2: Source 3: Drain JEDEC ― Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA ― temperature, etc.) may cause this product to decrease in the TOSHIBA 2-1B1B reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: Marking Equivalent Circuit (top view) 3 3 DT 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 SSM3J16TE Electrical Characteristics (Ta = 25°C) Characteristic Symbol MAX. UNIT ⎯ ⎯ ±1 μA V (BR) DSS ID = −0.1 mA, VGS = 0 −20 ⎯ ⎯ V IDSS VDS = −20 V, VGS = 0 ⎯ ⎯ −1 μA Gate threshold voltage Forward transfer admittance Vth VDS = −3 V, ID = −0.1 mA −0.6 ⎯ −1.1 V ⎪Yfs⎪ VDS = −3 V, ID = −10 mA 25 ⎯ ⎯ mS ID = −10 mA, VGS = −4 V ⎯ 6 8 ID = −10 mA, VGS = −2.5 V ⎯ 8 12 ID = −1 mA, VGS = −1.5 V ⎯ 18 45 ⎯ 11 ⎯ pF ⎯ 3.7 ⎯ pF ⎯ 10 ⎯ pF ⎯ 130 ⎯ ⎯ 190 ⎯ RDS (ON) Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time TYP. VGS = ±10 V, VDS = 0 Drain cut-off current Drain-Source ON resistance MIN. IGSS Gate leakage current Drain-Source breakdown voltage Test Condition Turn-on time ton Turn-off time toff VDS = −3 V, VGS = 0, f = 1 MHz VDD = −3 V, ID = − 10 mA, VGS = 0 ~ −2.5 V Ω ns Switching Time Test Circuit (a) Test circuit 0 OUT (b) VIN 0V 10% IN 50 Ω −2.5V 10 μs VDD 90% −2.5 V RL (c) VOUT VDD = −3 V Duty < = 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C VDS (ON) 90% 10% VDD tr ton tf toff Precaution Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Be sure to take this into consideration when using the device. 2 2007-11-01 SSM3J16TE ID – VDS ID – VGS -250 -1000 -150 -2.7 (mA) -3 VDS = -3 V -2.5 ID -200 Common Source Ta = 25°C -4 Drain current Drain current ID (mA) Common Source -10 -2.3 -100 -2.1 -1.9 -50 -1.7 -100 Ta = 100°C -10 25°C −25°C -1 -0.1 VGS = -1.5 V 0 0 -0.5 -1 -1.5 Drain - Source voltage VDS -0.01 0 -2 (V) -1 -2 -3 Gate - Source voltage 20 Common Source ID = -1 mA Drain – Source on-resistance RDS (ON) (Ω) Drain – Source on-resistance RDS (ON) (Ω) 1.8 VGS = -1.5 V 20 15 -2.5 V 10 5 -4 V 0 -1 -100 Drain current 1.6 1.4 1.2 10 8 Ta=100℃ .4 ID 0 -1000 -25℃ 0 -2 -4 RDS (ON) – Ta Vth (V) 30 25 Gate threshold voltage Drain – Source on-resistance RDS (ON) (Ω) Common Source VGS =−1.5 V, ID=-1mA 15 -2.5 V, -10mA 10 5 0 −25 -4V, -10mA 0 25 50 75 -10 -8 VGS (V) Vth – Ta -2 20 -6 Gate - Source voltage (mA) 40 35 25℃ 6 2 -10 VGS (V) RDS (ON) – VGS RDS (ON) – ID 25 -4 100 Ambient temperature Ta 125 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 −25 150 (°C) Common Source ID = -0.1 mA VDS = -3 V 0 25 50 75 100 Ambient temperature Ta 3 125 150 (°C) 2007-11-01 SSM3J16TE ⎪Yfs⎪ – ID IDR – VDS -250 -200 Common Source VGS = 0 V Ta = 25°C D IDR 300 (mA) Common Source VDS =−3 V Ta = 25°C 500 100 Drain reverse current Forward transfer admittance ( S) ⎪Yfs⎪ 1000 50 30 10 5 3 1 -1 -10 -100 Drain current ID -150 S -100 -50 0 0 -1000 IDR G 0.2 (mA) 0.4 0.6 Drain - Source VDS 1.2 1.4 (V) 10000 Common Source VGS = 0 V f = 1 MHz Ta = 25°C Common Source VDD = -3 V VGS = 0~-2.5 V Ta = 25°C 5000 (ns) 3000 toff 1000 t 100 10 Switching time C (pF) 1 t – ID c – VDS 200 Capacitance 0.8 Ciss Coss 500 tf 300 100 50 ton tr 30 Crss 1 -0.1 -1 -10 10 -0.1 -100 Drain- Source voltage VDS (V) -1 Drain current ID -10 -100 (mA) PD – Ta Mounted on FR4 board (25.4mmX25.4mmX1.6t CU Pad:0.6mm2X3 200 Power dissipation PD (mW) 250 150 100 50 0 0 20 40 60 80 100 Ambient temperature Ta 120 140 160 (°C) 4 2007-11-01 SSM3J16TE RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01