SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications · · · Unit: mm Small Package Low on Resistance : Ron = 120 mΩ (max) (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V (@VDS = 3 V, ID = 0.1 mA) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±10 V ID 3.2 IDP (Note2) 6.4 PD (Note1) 1250 DC Drain current Pulse Drain power dissipation (Ta = 25°C) A mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Note1: Mounted on FR4 board 2 (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm , t = 10 s) Note2: The pulse width limited by max channel temperature. JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight: 10 mg (typ.) Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account. 1 2002-01-24 SSM3K01T Marking Equivalent Circuit 3 3 KW 1 2 1 2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Gate leakage current IGSS Drain-Source breakdown voltage V (BR) DSS Drain Cut-off current IDSS Test Condition Min Typ. Max Unit VGS = ±10 V, VDS = 0 ¾ ¾ ±1 mA ID = 1 mA, VGS = 0 30 ¾ ¾ V VDS = 30 V, VGS = 0 ¾ ¾ 1 mA Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.6 ¾ 1.1 V Forward transfer admittance |Yfs| VDS = 3 V, ID = 1.6 A (Note3) 2.6 5.2 ¾ S Drain-Source ON resistance RDS (ON) ID = 1.6 A, VGS = 4 V (Note3) ¾ 85 120 mW Drain-Source ON resistance RDS (ON) ID = 1.3 A, VGS = 2.5 V (Note3) ¾ 115 150 mW Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz ¾ 152 ¾ pF Reverse transfer capacitance Crss VDS = 10 V, VGS = 0, f = 1 MHz ¾ 41 ¾ pF Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz ¾ 102 ¾ pF Switching time Turn-on time ton VDD = 15 V, ID = 0.5 A ¾ 45 ¾ Turn-off time toff VGS = 0~2.5 V, RG = 4.7 W ¾ 69 ¾ nS Note3: Pulse test Switching Time Test Circuit (a) Test circuit 10 ms OUT IN RL 0 ID RG 2.5 V VDD = 15 V RG = 4.7 W D.U. < = 1% VIN: tr, tf < 5 ns COMMON SOURCE Ta = 25°C (b) VIN 2.5 V VGS (c) VOUT 0 VDD 90% 10% 10% VDS 90% VDS (ON) VDD tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration for using the device. VGS recommended voltage of 2.5 V or higher to turn on this product. 2 2002-01-24 SSM3K01T ID – VDS 4 10 4.0 2.5 Common Source Common Source Ta = 25°C 2.1 1000 2 (mA) 1.9 V 1.5 1.7 V 1 VGS = 1.5 V 0.5 0 0 0.5 1 1.5 Drain-Source voltage VDS VDS = 3 V -25°C 10 1 0.1 0.01 0 2 0.5 1 RDS (ON) – ID 2 2.5 3 VGS (V) RDS (ON) – Ta 250 Common Source Common Source Ta = 25°C 160 Drain-Source on resistance RDS (ON) (m9) Drain-Source on resistance RDS (ON) (m9) 1.5 Gate-Source voltage (V) 200 VGS = 2.5 V 120 VGS = 4 V 80 40 0 0 1 2 3 Drain current ID 4 200 VGS = 2.5 V, ID = 1.3 A 150 100 VGS = 4 V, ID = 1.6 A 50 0 -50 5 (A) -25 0 25 50 75 100 125 150 Ambient temperature Ta (°C) |Yfs| – ID C – VDS 10 1000 Common Source VGS = 0 f = 1 MHz Ta = 25°C Common Source (pF) VDS = 3 V Ta = 25°C Capacitance C Forward transfer admittance |Yfs| (S) Ta = 25°C 100°C 100 ID 2.5 Drain current ID 3 Drain current (A) 3.5 ID – VGS 10000 1 Ciss 100 Coss Crss 0.1 0.01 0.1 Drain current 1 ID 10 0.1 10 (A) 1 10 Drain-Source voltage VDS 3 100 (V) 2002-01-24 SSM3K01T PD – Ta t – ID 1000 1.5 VDD = 15 V VGS = 0~2.5 V (W) RG = 4.7 W Ta = 25°C Switching time PD t Drain power dissipation (ns) Common Source toff 100 tf ton 0.75 DC 0.5 0.25 0 0 0.1 Drain current 25 50 75 100 125 150 Ambient temperature Ta (°C) 1 ID (25.4 mm ´ 25.4 mm ´ 1.6 t, 2 Cu Pad: 645 mm ） 1 tr 10 0.01 Mounted on FR4 board t = 10 s 1.25 (A) Safe operating area 10 ID max (pulsed) 1 ms* ID max (continuous) 1 DC operation Ta = 25°C 0.1 10 s* Mounted on FR4 board (25.4 mm ´ 25.4 mm ´ 1.6 t, 2 Cu Pad: 645 mm ) *: Single nonrepetitive Pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.01 0.1 1 Drain-source voltage VDSS max 10 VDS 100 (V) rth – tw rth (°C /W) 1000 Transient thermal impedance Drain current ID (A) 10 ms* 100 10 Single pulse Mounted on FR4 board (25.4 mm ´ 25.4 mm ´ 1.6 t, 2 Cu Pad: 645 mm ) 1 0.001 0.01 0.1 1 10 Pulse width 4 tw 100 1000 (s) 2002-01-24 SSM3K01T RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2002-01-24