SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications • • • Unit: mm Small Package Low on Resistance : Ron = 120 mΩ (max) (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V (@VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±10 V ID 3.2 DC Drain current Pulse Drain power dissipation (Ta = 25°C) IDP (Note 2) PD (Note 1) 6.4 A 1250 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: JEDEC ― JEITA ― Using continuously under heavy loads (e.g. the application of TOSHIBA 2-3S1A high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 10 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm , t = 10 s) Note 2: The pulse width limited by max channel temperature. Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account. 1 2007-11-01 SSM3K01T Marking Equivalent Circuit 3 3 KW 1 2 1 2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Gate leakage current IGSS Drain-Source breakdown voltage V (BR) DSS Drain Cut-off current IDSS Test Condition Min Typ. Max Unit VGS = ±10 V, VDS = 0 ⎯ ⎯ ±1 μA ID = 1 mA, VGS = 0 30 ⎯ ⎯ V VDS = 30 V, VGS = 0 ⎯ ⎯ 1 μA Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.6 ⎯ 1.1 V Forward transfer admittance |Yfs| VDS = 3 V, ID = 1.6 A (Note3) 2.6 5.2 ⎯ S Drain-Source ON resistance RDS (ON) ID = 1.6 A, VGS = 4 V (Note3) ⎯ 85 120 mΩ Drain-Source ON resistance RDS (ON) ID = 1.3 A, VGS = 2.5 V (Note3) ⎯ 115 150 mΩ Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 152 ⎯ pF Reverse transfer capacitance Crss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 41 ⎯ pF Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 102 ⎯ pF Switching time Turn-on time ton VDD = 15 V, ID = 0.5 A ⎯ 45 ⎯ Turn-off time toff VGS = 0~2.5 V, RG = 4.7 Ω ⎯ 69 ⎯ nS Note3: Pulse test Switching Time Test Circuit (a) Test circuit 10 μs OUT IN RL 0 ID RG 2.5 V VDD = 15 V RG = 4.7 Ω D.U. < = 1% VIN: tr, tf < 5 ns COMMON SOURCE Ta = 25°C (b) VIN 2.5 V VGS 0 (c) VOUT 90% 10% VDD 10% VDS 90% VDS (ON) VDD tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration for using the device. 2 2007-11-01 SSM3K01T ID – VDS 4 10 4.0 2.5 3.5 Common Source Common Source Ta = 25°C 2.1 1000 3 2.5 Drain current ID (mA) Drain current ID (A) ID – VGS 10000 1.9 V 2 1.5 1.7 V 1 VGS = 1.5 V 0.5 0 0 0.5 1 1.5 Drain-Source voltage VDS = 3 V −25°C 10 1 0.1 0.01 0 2 0.5 1 RDS (ON) – ID 2 2.5 3 VGS (V) RDS (ON) – Ta 250 Common Source Common Source Ta = 25°C 160 Drain-Source on resistance RDS (ON) (mΩ) Drain-Source on resistance RDS (ON) (mΩ) 1.5 Gate-Source voltage VDS (V) 200 VGS = 2.5 V 120 VGS = 4 V 80 40 0 0 1 2 3 4 200 100 VGS = 4 V, ID = 1.6 A 50 0 −50 5 VGS = 2.5 V, ID = 1.3 A 150 Drain current ID (A) −25 0 25 50 75 100 125 150 Ambient temperature Ta (°C) |Yfs| – ID C – VDS 10 1000 Common Source VGS = 0 f = 1 MHz Ta = 25°C Common Source (pF) VDS = 3 V Ta = 25°C Capacitance C Forward transfer admittance |Yfs| (S) Ta = 25°C 100°C 100 1 Ciss 100 Coss Crss 0.1 0.01 0.1 1 10 0.1 10 Drain current ID (A) 1 Drain-Source voltage 3 10 100 VDS (V) 2007-11-01 SSM3K01T t – ID PD – Ta 1000 1.5 Common Source Drain power dissipation PD (W) VDD = 15 V Switching time t (ns) VGS = 0~2.5 V RG = 4.7 Ω Ta = 25°C toff 100 tf ton 0.75 DC 0.5 0.25 0 0 0.1 (25.4 mm × 25.4 mm × 1.6 t, 2 Cu Pad: 645 mm ) 1 tr 10 0.01 Mounted on FR4 board t = 10 s 1.25 25 50 75 100 125 150 Ambient temperature Ta (°C) 1 Drain current ID (A) Safe operating area 10 ID max (pulsed) 1 ms* ID max (continuous) 1 DC operation Ta = 25°C 0.1 10 s* Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, 2 Cu Pad: 645 mm ) *: Single nonrepetitive Pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.01 0.1 1 Drain-source voltage VDSS max 10 100 VDS (V) rth – tw 1000 Transient thermal impedance rth (°C /W) Drain current ID (A) 10 ms* 100 10 Single pulse Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, 2 Cu Pad: 645 mm ) 1 0.001 0.01 0.1 1 Pulse width 4 10 100 1000 tw (s) 2007-11-01 SSM3K01T RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01