SSM3K09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K09FU High Speed Switching Applications · Small package · Low on resistance Unit: mm : Ron = 0.7 Ω (max) (@VGS = 10 V) : Ron = 1.2 Ω (max) (@VGS = 4 V) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±20 V DC ID 400 Pulse IDP 800 PD (Note1) 150 mW Channel temperature Tch 150 °C Storage temperature Tstg -55~150 °C Drain current Drain power dissipation (Ta = 25°C) mA Note1: Mounted on FR4 board 2 (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.6 mm ´ 3) Figure 1. JEDEC ― JEITA SC-70 TOSHIBA 2-2E1E Weight: 0.006 g (typ.) Marking Equivalent Circuit 3 Figure 1: 25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.6 mm2 ´ 3 (top view) 3 0.6 mm 1.0 mm DJ 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2002-01-24 SSM3K09FU Electrical Characteristics (Ta = 25°C) Characteristics Symbol Gate leakage current IGSS Drain-Source breakdown voltage Drain cut-off current V (BR) DSS IDSS Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Test Condition Min Typ. Max Unit VGS = ±16 V, VDS = 0 ¾ ¾ ±1 mA ID = 1 mA, VGS = 0 30 ¾ ¾ V VDS = 30 V, VGS = 0 ¾ ¾ 1 mA Vth VDS = 5 V, ID = 0.1 mA 1.1 ¾ 1.8 V ½Yfs½ VDS = 5 V, ID = 200 mA (Note2) 270 ¾ ¾ mS ID = 200 mA, VGS = 10 V (Note2) ¾ 0.5 0.7 ID = 200 mA, VGS = 4 V (Note2) ¾ 0.8 1.2 ID = 200 mA, VGS = 3.3 V (Note2) ¾ 1.0 1.7 RDS (ON) W Input capacitance Ciss VDS = 5 V, VGS = 0, f = 1 MHz ¾ 20 ¾ pF Reverse transfer capacitance Crss VDS = 5 V, VGS = 0, f = 1 MHz ¾ 7 ¾ pF Output capacitance Coss VDS = 5 V, VGS = 0, f = 1 MHz ¾ 16 ¾ pF Switching time Turn-on time ton VDD = 5 V, ID = 200 mA, ¾ 72 ¾ ns Turn-off time toff VGS = 0~4 V ¾ 68 ¾ ns Note2: Pulse test Switching Time Test Circuit 4V (b) VIN Output 4V RL (a) Test circuit 0V 90% Input 50 9 0 10 ms VDD (c) VOUT VDD = 5 V D.U. < = 1% Input: tr, tf < 5 ns (Zout = 50 W) Common Source Ta = 25°C 10% VDD 10% 90% VDS (ON) tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. VGS recommended voltage of 4.0 V or higher to turn on this product. 2 2002-01-24 SSM3K09FU ID – VDS RDS (ON) – ID 1000 2 Common Source Drain current ID (mA) 4 Drain-Source on resistance RDS (ON) (W) 10 800 3.3 600 3.0 400 2.8 2.6 200 0.5 1 1.5 Drain-Source voltage VDS Ta = 25°C 1.6 1.4 1.2 VGS = 3.3 V 1 4V 0.8 0.6 10 V 0.4 0.2 VGS = 2.4 V 0 0 Common Source 1.8 Ta = 25°C 0 0 2 200 400 Drain current (V) ID – VGS 1000 (mA) 2 Common Source Drain-Source on resistance RDS (ON) (W) 100 (mA) Common Source 1.8 VDS = 5 V ID ID 800 RDS (ON) – VGS 1000 Drain current 600 25°C 10 Ta = 100°C -25°C 1 0.1 ID = 200 mA 1.6 1.4 1.2 Ta = 100°C 1 0.8 25°C 0.6 -25°C 0.4 0.2 0.01 0 1 2 3 Gate-Source voltage VGS 0 0 4 (V) 2 4 6 Gate-Source voltage 8 VGS 10 (V) ½Yfs½ – ID 1000 RDS (ON) – Ta Common Source 2 500 Common Source 1.6 1.4 VGS = 3.3 V 1.2 VDS = 5 V Ta = 25°C ID = 200 mA Forward transfer admittance ½Yfs½ (mS) Drain-Source on resistance RDS (ON) (W) 1.8 4V 1 0.8 10 V 0.6 300 100 50 30 0.4 0.2 0 -25 0 25 50 75 100 125 10 10 150 Ambient temperature Ta (°C) 30 50 100 Drain current 3 300 ID 500 1000 (mA) 2002-01-24 SSM3K09FU Vth – Ta IDR – VDS 2 1000 (mA) 800 D IDR VDS = 5 V 1.4 1.2 Drain Reveres current (V) Gate threshold voltage Vth ID = 0.1 mA 1.6 1 0.8 0.6 0.4 0.2 0 -25 Common Source VGS = 0 Ta = 25°C Common Source 1.8 0 25 50 75 100 125 600 G IDR S 400 200 0 0 150 -0.2 -0.4 -0.8 -1 Drain-Source voltage VDS Ambient temperature Ta (°C) C – VDS -1.2 -1.4 (V) t – ID 500 5000 Common Source VGS = 0 V f = 1 MHz Ta = 25°C (ns) 100 Common Source VDD = 5 V VGS = 0~4 V Ta = 25°C 1000 Switching time Capacitance C t (pF) -0.6 Ciss 10 Coss toff tf 100 ton tr Crss 1 0.1 1 10 10 1 100 Drain-Source voltage VDS (V) 10 Drain current 100 ID 1000 (mA) PD – Ta 200 (25.4 mm ´ 25.4 mm ´1.6 t 2 Cu pad: 0.6 mm ´ 3) Figure 1 150 Power dissipation PD (mW) Mounted on FR4 board 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 4 2002-01-24 SSM3K09FU RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2002-01-24