SSM3K09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K09FU High Speed Switching Applications • Small package • Low on resistance Unit: mm : Ron = 0.7 Ω (max) (@VGS = 10 V) : Ron = 1.2 Ω (max) (@VGS = 4 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±20 V DC ID 400 Pulse IDP 800 PD (Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature Tstg −55~150 °C Drain current Drain power dissipation (Ta = 25°C) Note: mA JEDEC ― JEITA SC-70 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-2E1E temperature, etc.) may cause this product to decrease in the Weight: 0.006 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm × 3) Figure 1. Marking Equivalent Circuit (top view) 3 Figure 1: 25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm2 × 3 3 0.6 mm 1.0 mm DJ 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 SSM3K09FU Electrical Characteristics (Ta = 25°C) Characteristics Symbol Gate leakage current IGSS Drain-Source breakdown voltage Drain cut-off current V (BR) DSS IDSS Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Test Condition Min Typ. Max Unit VGS = ±16 V, VDS = 0 ⎯ ⎯ ±1 μA ID = 1 mA, VGS = 0 30 ⎯ ⎯ V VDS = 30 V, VGS = 0 ⎯ ⎯ 1 μA Vth VDS = 5 V, ID = 0.1 mA 1.1 ⎯ 1.8 V ⏐Yfs⏐ VDS = 5 V, ID = 200 mA (Note2) 270 ⎯ ⎯ mS ID = 200 mA, VGS = 10 V (Note2) ⎯ 0.5 0.7 ID = 200 mA, VGS = 4 V (Note2) ⎯ 0.8 1.2 ID = 200 mA, VGS = 3.3 V (Note2) ⎯ 1.0 1.7 RDS (ON) Ω Input capacitance Ciss VDS = 5 V, VGS = 0, f = 1 MHz ⎯ 20 ⎯ pF Reverse transfer capacitance Crss VDS = 5 V, VGS = 0, f = 1 MHz ⎯ 7 ⎯ pF Output capacitance Coss VDS = 5 V, VGS = 0, f = 1 MHz ⎯ 16 ⎯ pF Switching time Turn-on time ton VDD = 5 V, ID = 200 mA, ⎯ 72 ⎯ ns Turn-off time toff VGS = 0~4 V ⎯ 68 ⎯ ns Note2: Pulse test Switching Time Test Circuit 4V (b) VIN Output 4V RL (a) Test circuit 0V 90% Input 50 Ω 0 10 μs VDD (c) VOUT VDD = 5 V D.U. < = 1% Input: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C 10% VDD 10% 90% VDS (ON) tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. 2 2007-11-01 SSM3K09FU ID – VDS RDS (ON) – ID 1000 2 Common Source Drain current ID (mA) 4 Drain-Source on resistance RDS (ON) (Ω) 10 800 3.3 600 3.0 400 2.8 2.6 200 0.5 1 1.5 Drain-Source voltage Ta = 25°C 1.6 1.4 1.2 VGS = 3.3 V 1 4V 0.8 0.6 10 V 0.4 0.2 VGS = 2.4 V 0 0 Common Source 1.8 Ta = 25°C 0 0 2 200 400 800 1000 Drain current ID (mA) VDS (V) ID – VGS RDS (ON) – VGS 1000 2 Common Source Drain-Source on resistance RDS (ON) (Ω) 100 (mA) Common Source 1.8 VDS = 5 V Drain current ID 600 25°C 10 Ta = 100°C −25°C 1 0.1 ID = 200 mA 1.6 1.4 1.2 Ta = 100°C 1 0.8 25°C 0.6 −25°C 0.4 0.2 0.01 0 1 2 3 Gate-Source voltage 0 0 4 VGS (V) 2 4 6 Gate-Source voltage 8 10 VGS (V) ⏐Yfs⏐ – ID 1000 RDS (ON) – Ta Common Source 2 500 Common Source ID = 200 mA Forward transfer admittance ⏐Yfs⏐ (mS) Drain-Source on resistance RDS (ON) (Ω) 1.8 1.6 1.4 VGS = 3.3 V 1.2 4V 1 0.8 10 V 0.6 VDS = 5 V Ta = 25°C 300 100 50 30 0.4 0.2 0 −25 0 25 50 75 100 125 10 10 150 Ambient temperature Ta (°C) 30 50 100 300 500 1000 Drain current ID (mA) 3 2007-11-01 SSM3K09FU Vth – Ta IDR – VDS 1000 2 Drain Reveres current IDR (mA) Vth (V) Gate threshold voltage ID = 0.1 mA 1.6 VDS = 5 V 1.4 1.2 1 0.8 0.6 0.4 0.2 0 −25 Common Source VGS = 0 Ta = 25°C Common Source 1.8 0 50 25 75 100 125 800 D 600 G IDR S 400 200 0 0 150 −0.4 −0.2 C – VDS 100 Switching time t (ns) (pF) Capacitance C 5000 Common Source VGS = 0 V f = 1 MHz Ta = 25°C Ciss 10 Coss VDS −1.2 −1.4 (V) 10 Common Source VDD = 5 V VGS = 0~4 V Ta = 25°C 1000 toff tf 100 ton tr Crss Drain-Source voltage −1 t – ID 500 1 −0.8 Drain-Source voltage Ambient temperature Ta (°C) 1 0.1 −0.6 10 1 100 VDS (V) 10 100 1000 Drain current ID (mA) PD – Ta 200 Power dissipation PD (mW) Mounted on FR4 board (25.4 mm × 25.4 mm ×1.6 t 2 Cu pad: 0.6 mm × 3) Figure 1 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 4 2007-11-01 SSM3K09FU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01