STMICROELECTRONICS T850-600G

T835-600G
T850-600G
®
HIGH PERFORMANCE TRIAC
FEATURES
HIGH COMMUTATION PREFORMANCES
SNUBBERLESSTM TECHNOLOGY
HIGH NOISE IMMUNITY (dV/dt)
HIGH ITSM
A2
A2
DESCRIPTION
G
A1
The T835-600G and T850-600G triacs are using
high performance SNUBBERLESS technology.
They are intended for AC control applications
using surface mount tecnology.
These devices are perfectly suited where high
commutation and surge performances are
required.
D2PAK
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C
600
V
IT(RMS)
RMS on-state current
(360° conduction angle)
Tc= 110°C
8
A
Non repetitive surge peak on-state current
(Tj initial = 25°C)
tp = 8.3ms
85
A
tp = 10 ms
80
I t Value for fusing
tp = 10 ms
32
A2s
Critical rate of rise of on-state current
Repetitive
F = 50 Hz
20
A/µs
Non Repetitive
100
ITSM
2
I t
dI/dt
2
IG = 500 mA
Tstg
Tj
T
dIG /dt = 1 A/µs.
Storage temperature range
Operating junction temperature range
Maximum temperature for soldering during 10s
May 1998 - Ed: 3A
- 40, + 150
- 40, + 125
°C
260
°C
1/5
T835-600G / T850-600G
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient (S = 1 cm2)
45
°C/W
Rth(j-c)
Junction to case for DC
2.1
°C/W
Rth(j-c)
Junction to case for AC 360° conduction angle (F=50Hz)
1.6
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV)= 1 W PGM = 10 W (tp = 20 µs)
IGM = 4 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
IGT
Test Conditions
Quadrant
VD=12V (DC) RL=33Ω
Tj= 25°C
I-II-III
T835
MIN
MAX
T850
2
mA
35
50
VGT
VD=12V (DC) RL=33Ω
Tj= 25°C
I-II-III
MAX
1.3
V
VGD
VD=VDRM RL=3.3kΩ
Tj= 125°C
I-II-III
MIN
0.2
V
IH *
IT= 100mA
Tj= 25°C
IL
IG = 1.2 IGT
Gate open
Tj = 25°C
MAX
35
50
mA
I-III
MAX
50
60
mA
II
MAX
80
100
VTM *
ITM= 11A tp= 380µs
Tj= 25°C
MAX
1.5
V
IDRM
VD = VDRM
Tj= 25°C
MAX
5
µA
IRRM
VR = VRRM
Tj= 125°C
MAX
2
mA
Linear slope up to VD=67%VDRM
Gate open
Tj= 125°C
MIN
500
1000
V/µs
Without snubber
Tj= 125°C
MIN
4.5
7
A/ms
dV/dt *
(dI/dt)c *
* For either polarity of electrode A2 voltage with reference to electrode A1.
ORDERING INFORMATION
Add "-TR" suffix for Tape & Reel shipment
T
8
35 - 600
CURRENT
G
PACKAGE :
G = D2PAK
TRIAC
2/5
Unit
SENSITIVITY
VOLTAGE
T835-600G / T850-600G
Fig. 1: Maximum power dissipation versus RMS
on-state current.
Fig. 2: Correlation between maximum power dissipation and maximum allowable temperatures
(Tamb and Tcase) for different thermal resistances
heatsink+contact.
P(W)
P(W)
12
12
10
α=120°
8
Rth=0°C/W
Rth=2°C/W
110
8
α=90°
6
Rth=5°C/W
Rth=8°C/W
10
α=180°
Tcase (°C)
115
6
a=60°
4
4
α=30°
2
120
2
α=180°
IT(RMS)(A)
0
0
1
2
3
4
5
6
7
8
0
0
20
Tamb(°C)
40
60
80
100
120
140
125
Fig. 3: RMS on-state current versus case temperature.
Fig. 4 : Relative variation of thermal impedance
versus pulse duration.
IT(RMS)(A)
K=[Zth/Rth]
10
1.00
α=180°
8
Zth(j-c)
6
Zth(j-a)
0.10
4
2
Tcase(°C)
0
0
25
50
tp(s)
75
100
125
0.01
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
Fig. 5: Relative variation of gate trigger current and
holding current versus junction temperature (typical values).
Fig. 6: Non repetitive surge peak on-state current
versus number of cycles.
IGT,IH[Tj]/IGT,IH[Tj=25°C]
ITS M(A)
2.5
80
2.0
Tj initial=25°C
F=50Hz
70
IGT
60
50
1.5
40
1.0
IH
30
20
0.5
10
Tj(°C)
0.0
-40
-20
0
20
40
60
80
100 120 140
0
Number of cycles
1
10
100
1000
3/5
T835-600G / T850-600G
Fig. 7: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t.
Fig. 8: On-state characteristics (maximum values).
ITM(A)
ITSM(A),I²t(A²s)
100
300
Tj max.:
Vto=0.83V
Rt=56 mΩ
Tj initial=25°C
ITSM
100
10
I²t
Tj=Tj max.
Tj=25°C
tp(ms)
10
1
2
5
10
Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit
board FR4, copper thickness: 35µm).
VTM(V)
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 10: Typical reflow soldering heat profile, either
for mounting on FR4 or metal-backed boards.
T (°C)
Rth(j-a) (°C/W)
250
80
245°C
215°C
70
200
60
50
150
Epoxy FR4
board
40
100
30
20
10
0
S(Cu) (cm²)
0
4/5
4
8
12
16
20
24
Metal-backed
board
50
28
32
36
40
t (s)
0
0
40
80
120
160 200 240 280 320 360
T835-600G / T850-600G
PACKAGE MECHANICAL DATA
D2PAK
DIMENSIONS
REF.
Millimeters
Min. Typ. Max. Min. Typ. Max.
A
E
C2
L2
D
L
L3
A1
B2
R
C
B
G
A2
2.0 MIN.
FLAT ZONE
V2
A
4.30
4.60 0.169
0.181
A1
2.49
2.69 0.098
0.106
A2
0.03
0.23 0.001
0.009
B
0.70
0.93 0.027
0.037
B2
C
1.25
0.45
C2
1.21
1.36 0.047
0.054
D
8.95
9.35 0.352
0.368
E
10.00
10.28 0.393
0.405
G
4.88
5.28 0.192
0.208
L
15.00
15.85 0.590
0.624
L2
1.27
1.40 0.050
0.055
L3
1.40
R
FOOT PRINT DIMENSIONS (in millimeters)
1.40
0.048 0.055
0.60 0.017
0.024
1.75 0.055
0.40
V2
0°
0.069
0.016
8°
0°
8°
MARKING
16.90
10.30
Inches
5.08
TYPE
MARKING
T835-600G
T835
600G
T850-600G
T850
600G
1.30
PACKING
3.70
8.90
Tube : 50 units
Tape and reel : 500 units
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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