THBT15011, THBT20011, THBT27011 Tripolar overvoltage protection for telecom line Features ■ Bidirectional crowbar protection between tip and gnd, ring and gnd and between tip and ring ■ Peak pulse current: IPP = 30 A for 10/1000 µs surge ■ Holding current: IH = 150 mA SO-8 Complies with Telcordia standards ■ Telcordia GR-1089-Core, (second level) with line series resistors – 10/1000 µs, 1000 V – 2/10 µs, 2500 V (first level) – 2/10 µs, 5000 V Figure 1. Schematic diagram TIP 1 Description Dedicated to telecommunication equipment protection, these devices provide a triple bidirectional protection function. 8 TIP GND 2 7 GND GND 3 6 GND RING 4 5 RING They ensure the same protection capability with the same breakdown voltage both in longitudinal mode and transversal mode. A particular attention has been given to the internal wire bonding. The “4-point” configuration ensures a reliable protection, eliminating overvoltages introduced by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transient overvoltages. Dynamic characteristics have been defined for several types of surges, in order to meet the SLIC maximum ratings. February 2008 Rev 8 1/10 www.st.com 10 Characteristics 1 THBT15011, THBT20011, THBT27011 Characteristics Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Unit Peak pulse current(1) 10 / 1000 µs 30 A ITSM Non repetitive surge peak on-state current (F = 50 Hz) tp = 10 ms t=1s 8 3.5 A Tstg Tj Storage temperature range Maximum junction temperature - 40 to + 150 150 °C 260 °C IPP TL Maximum lead temperature for soldering during 10s 1. For pulse waveform see Figure 2 Figure 2. Pulse waveform 10/1000 µs, tr = 10 µs, tp = 1000 µs % I PP 100 50 0 tr Figure 3. t tp Test circuit for IPP Longitudinal mode TIP See test circuit 3 IPP/2 RP IPP/2 RP RING THBT GND Transversal mode TIP or RING I PP See test circuit 3 GND 2/10 Value RP THBT THBT15011, THBT20011, THBT27011 Table 2. Characteristics Thermal resistance Symbol Parameter Junction to ambient Rth(j-a) Table 3. Unit 170 °C/W Electrical characteristics (Tamb = 25 °C) Symbol Parameter I IPP VRM Stand-off voltage IRM Leakage current at stand-off voltage VR Continuous reverse voltage VBR Breakdown voltage VBO Breakover voltage IH Holding current IBO Breakover current VF Forward voltage drop IPP Peak pulse current C Value IBO IH V IR VRM VBR VBO Capacitance Table 4. Static parameters IRM @ VRM Type max. IR @ VR max. max. (1) VBO @ IBO IH C min. min. max. (3) (4) (2) µA V µA V V V mA mA pF THBT15011D 5 135 50 150 210 50 400 150 80 THBT20011D 5 180 50 200 290 50 400 150 80 THBT27011D 5 240 50 270 380 50 400 150 80 1. IR measured at VR guarantee VBR min ≥ VR 2. Measured at 50 Hz (1 cycle) - See test circuit 1 (Figure 4). 3. See the reference test circuit 2 (Figure 5). 4. VR = 1 V bias, VRMS = 1 V, F = 1 MHz. 3/10 Characteristics Table 5. THBT15011, THBT20011, THBT27011 Dynamic breakover voltages (transversal mode) Test conditions(1) Type Symbol THBT15011D VBO 10/700μs 1.2/50μs 2/10μs 1.5kV 1.5kV 2.5kV Rp=10Ω Rp=10Ω Rp=62Ω THBT20011D VBO 10/700μs 1.2/50μs 2/10μs 1.5kV 1.5kV 2.5kV VBO 10/700μs 1.2/50μs 2/10μs 1.5kV 1.5kV 2.5kV THBT27011D Max Unit IPP=30A IPP=30A IPP=38A 190 190 200 V Rp=10Ω Rp=10Ω Rp=62Ω IPP=30A IPP=30A IPP=38A 270 270 280 V Rp=10Ω Rp=10Ω Rp=62Ω IPP=30A IPP=30A IPP=38A 360 360 400 V 1. See test circuit 3 for VBO dynamic parameters; Rp is the protection resistor located on the line card. Figure 4. Test circuit 1 for IBO and VBO parameters K ton = 20ms R1 = 140Ω R2 = 240Ω 220V 50Hz DUT Vout 1/4 IBO measurement TEST PROCEDURE Pulse test duration (tp = 20ms): ● for Bidirectional devices = Switch K is closed ● for Unidirectional devices = Switch K is open VOUT selection: ● Device with VBO < 200 V ➔ VOUT = 250 VRMS, R1 = 140 Ω ● Device with VBO ≥ 200 V ➔ VOUT = 480 VRMS, R2 = 240 Ω 4/10 VBO measurement THBT15011, THBT20011, THBT27011 Figure 5. Characteristics Test circuit 2 for IH parameter R Surge generator D.U.T VBAT = - 48 V This is a GO - NO GO test which allows confirmation of the holding current (I H) level in a functional test circuit. TEST PROCEDURE 1/ Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2/ Fire the D.U.T. with a surge current ➔ IPP = 10 A,10/1000 µs. 3/ The D.U.T. will come back off-state within 50 ms maximum. Figure 6. Test circuit 3 for VBO parameters R4 (VP is defined in no load condition) TIP L R2 RING R3 VP R1 C1 C2 G ND Table 6. Parameters for selected pulse characteristics Pulse (µs) Vp (V) C1 (µF) C2 (nF) L (µH) R1 (Ω) R2 (Ω) R3 (Ω) R4 (Ω) IPP (A) Rp (Ω) tr tp 10 700 1500 20 200 0 50 15 25 25 30 10 1.2 50 1500 1 33 0 76 13 25 25 30 10 2 10 2500 10 0 1.1 1.3 0 3 3 38 62 5/10 Application information Figure 7. THBT15011, THBT20011, THBT27011 Surge peak current versus overload duration ITSM(A) 10 F=50Hz Tj initial=25°C 9 8 7 6 5 4 3 2 1 t(s) 0 1E-2 2 1E-1 1E+0 1E+1 1E+2 Application information Figure 8. Device connections TIP 1 2 8 TIP 7 GND GND 3 RING 4 6/10 1E+3 6 5 RING 1. Connect pins 2, 3, 6 and 7 to Ground to guarantee a good surge current capability for long duration disturbances. 2. To take advantage of the" 4-point“ structure of the THBT, the TIP and RING lines have to cross the device. In this case, the device will eliminate the overvoltages generated by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transients. THBT15011, THBT20011, THBT27011 2.1 Application information Application circuits Figure 9. Line card protection RING GENERATOR - VBAT PTC LINE A T E S T RING RELAY R SLIC E L 220 nF A Y S LINE B THBTxxxD LCP1521S PTC Figure 10. Protection for telephone set with ground key Hook LA Speech dialing ringer LB THBTxxxD Ground key E 7/10 Package information 3 THBT15011, THBT20011, THBT27011 Package information ● Epoxy meets UL94, V0 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at www.st.com. Table 7. SO-8 dimensions Dimensions Ref. Min. Seating Plane C A2 h x 45° C A1 e b A Millimeters L k ppp C L1 Typ. A Inches Max. Min. Typ. 1.75 A1 0.1 A2 1.25 0.25 Max. 0.069 0.004 0.010 0.049 b 0.28 0.48 0.011 0.019 C 0.17 0.23 0.007 0.009 D 4.80 4.90 5.00 0.189 0.193 0.197 E 5.80 6.00 6.20 0.228 0.236 0.244 E1 3.80 3.90 4.00 0.150 0.154 0.157 D 8 5 E1 1 E e 4 1.27 h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 8° 0° L1 k 1.04 0° ppp Figure 11. Footprint dimensions in mm (inches) 0.050 0.041 0.10 8° 0.004 Figure 12. Marking 6.8 (0.268) 0.6 (0.024) 4.2 (0.165) XXXXX : Marking ZZ : Manufacturing location Y : Year WW : week xxxxxx â z z y ww 1.27 (0.050) Pin 1 8/10 THBT15011, THBT20011, THBT27011 4 Ordering information scheme Ordering information scheme Figure 13. Ordering information scheme THBT 150 1 1 D RL Bidirectional Trisil Breakdown voltage Version Package 1 = SO-8 plastic Dynamic Packing (Blank) = Tube RL = Tape and reel 5 Ordering information Table 8. 6 Ordering information Order code Marking THBT15011D BT151D THBT20011D BT201D THBT27011D BT271D Package Weight SO-8 0.077 g Revision history Table 9. Document revision history Date Revision Oct-2003 7A 19-Feb-2008 8 Changes Previous release Reformatted to current standards. Removed THBT16011D from Table 4 and Table 8. Updated Figure 4, Figure 5, and Figure 9. Added ECOPACK paragraph in Section 3. Added Figure 12: Marking. 9/10 THBT15011, THBT20011, THBT27011 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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