TI TLV271

 µ SGLS275 − OCTOBER 2004
D Qualification in Accordance With
D
D
D
D
D
D
D
D
D Input Bias Current . . . 1 pA
D Specified Temperature Range
AEC-Q100†
Qualified for Automotive Applications
Customer-Specific Configuration Control
Can Be Supported Along With
Major-Change Approval
Rail-To-Rail Output
Wide Bandwidth . . . 3 MHz
High Slew Rate . . . 2 .4 V/µs
Supply Voltage Range . . . 2.7 V to 16 V
Supply Current . . . 550 µA/Channel
Input Noise Voltage . . . 39 nV/√Hz
−40°C to 125°C . . . Automotive Grade
D Ultrasmall Packaging
D
− 5-Pin SOT-23 (TLV271)
Ideal Upgrade for TLC27x Family
Operational Amplifier
+
−
† Contact Texas Instruments for details. Q100 qualification data
available on request.
description
The TLV27x takes the minimum operating supply voltage down to 2.7 V over the extended automotive
temperature range while adding the rail-to-rail output swing feature. This makes it an ideal alternative to the
TLC27x family for applications where rail-to-rail output swings are essential. The TLV27x also provides 3-MHz
bandwidth from only 550 µA.
Like the TLC27x, the TLV27x is fully specified for 5-V and ±5-V supplies. The maximum recommended supply
voltage is 16 V, which allows the devices to be operated from a variety of rechargeable cells (±8 V supplies down
to ±1.35 V).
The CMOS inputs enable use in high-impedance sensor interfaces, with the lower voltage operation making
an attractive alternative for the TLC27x in battery-powered applications.
The 2.7-V operation makes it compatible with Li-Ion powered systems and the operating supply voltage range
of many micropower microcontrollers available today including Texas Instruments MSP430.
SELECTION OF SIGNAL AMPLIFIER PRODUCTS†
DEVICE
VDD (V)
VIO
(µV)
Iq/Ch
(µA)
IIB (pA)
GBW
(MHz)
SR
(V/µs)
SHUTDOWN
RAILTORAIL
SINGLES/DUALS/QUADS
TLV27x
2.7−16
500
550
1
3
2.4
—
O
S/D/Q
TLC27x
3−16
1100
675
1
1.7
3.6
—
—
S/D/Q
TLV237x
2.7−16
500
550
1
3
2.4
Yes
I/O
S/D/Q
TLC227x
4−16
300
1100
1
2.2
3.6
—
O
D/Q
TLV246x
2.7−6
150
550
1300
6.4
1.6
Yes
I/O
S/D/Q
TLV247x
2.7−6
250
600
2
2.8
1.5
Yes
I/O
S/D/Q
TLV244x
2.7−10
300
† Typical values measured at 5 V, 25°C
725
1
1.8
1.4
—
O
D/Q
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright  2001−2004, Texas Instruments Incorporated
!"#$%&'(!$" !) *+%%,"( ') $# -+./!*'(!$" 0'(,1
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)('"0'%0 3'%%'"(41 %$0+*(!$" -%$*,))!"5 0$,) "$( ",*,))'%!/4 !"*/+0,
(,)(!"5 $# '// -'%'&,(,%)1
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
µ SGLS275 − OCTOBER 2004
FAMILY PACKAGE TABLE
PACKAGE TYPES
NUMBER OF
CHANNELS
SOIC
TLV271
1
TLV272
2
4
DEVICE
TLV274
† Product Preview
SOT-23
TSSOP
MSOP†
8
5
—
—
8
—
—
8
14
—
14
—
UNIVERSAL
EVM BOARD
See the EVM
Selection Guide
(SLOU060)
TLV271 AVAILABLE OPTIONS
PACKAGED DEVICES
VIOMAX AT
25°C
TA
−40°C to 125°C
SOT-23
SMALL OUTLINE
(D)
5 mV
TLV271QDRQ1
(DBV)
SYMBOL
TLV271QDBVRQ1
271Q
TLV272 AVAILABLE OPTIONS
PACKAGED DEVICES
VIOMAX AT
25°C
TA
−40°C to 125°C
† Product Preview
5 mV
MSOP
SMALL OUTLINE
(D)
(DGK)
TLV272QDRQ1
TLV272QDGKRQ1†
SYMBOL
TLV274 AVAILABLE OPTIONS
PACKAGED DEVICES
2
TA
VIOMAX AT 25°C
SMALL OUTLINE
(D)
TSSOP
(PW)
−40°C to 125°C
5 mV
TLV274QDRQ1
TLV274QPWRQ1
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
µ SGLS275 − OCTOBER 2004
TLV27x PACKAGE PINOUTS(1)
TLV271
D PACKAGE
(TOP VIEW)
TLV271
DBV PACKAGE
(TOP VIEW)
OUT
GND
IN+
1
5
VDD
NC
IN −
IN +
GND
2
3
4
IN −
1
8
2
7
3
6
4
5
8
2
7
3
6
4
5
NC
VDD
OUT
NC
TLV274
D OR PW PACKAGE
TLV272
D OR DGK PACKAGE
(TOP VIEW)
1OUT
1IN −
1IN +
GND
1
(TOP VIEW)
VDD
2OUT
2IN −
2IN+
1OUT
1IN −
1IN+
VDD
2IN+
2IN −
2OUT
1
14
2
13
3
12
4
11
5
10
6
9
7
8
4OUT
4IN −
4IN+
GND
3IN+
3IN −
3OUT
NC − No internal connection
(1) SOT−23 may or may not be indicated
TYPICAL PIN 1 INDICATORS
Pin 1
Printed or
Molded Dot
Pin 1
Stripe
Pin 1
Bevel Edges
POST OFFICE BOX 655303
Pin 1
Molded ”U” Shape
• DALLAS, TEXAS 75265
3
µ SGLS275 − OCTOBER 2004
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16.5 V
Differential input voltage, VID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± VDD
Input voltage range, VI (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.2 V to VDD + 0.2 V
Input current range, II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 10 mA
Output current range, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 100 mA
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating free-air temperature range, TA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
Maximum junction temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values, except differential voltages, are with respect to GND.
DISSIPATION RATING TABLE
PACKAGE
θJC
(°C/W)
D (8)
38.3
D (14)
26.9
θJA
(°C/W)
TA ≤ 25°C
POWER RATING
TA = 25°C
POWER RATING
176
710 mW
396 mW
122.3
1022 mW
531 mW
DBV (5)
55
324.1
385 mW
201 mW
DGK (8)
54.23
259.96
481 mW
250 mW
PW (14)
29.3
173.6
720 mW
374 mW
recommended operating conditions
Single supply
Supply voltage, VDD
Split supply
Common-mode input voltage range, VICR
Operating free-air temperature, TA
4
Q-suffix
POST OFFICE BOX 655303
MIN
MAX
2.7
16
±1.35
±8
0
VDD−1.35
125
−40
• DALLAS, TEXAS 75265
UNIT
V
V
°C
µ SGLS275 − OCTOBER 2004
electrical characteristics at specified free-air temperature, VDD = 2.7 V, 5 V, and 15 V (unless
otherwise noted)
dc performance
PARAMETER
VIO
Input offset voltage
αVIO
Offset voltage drift
TEST CONDITIONS
VIC = VDD/2,
RL = 10 kΩ,
kΩ
VO = VDD/2,
RS = 50 Ω
VIC = 0 to VDD−1.35V,
RS = 50 Ω
CMRR
AVD
Common-mode rejection ratio
Large-signal differential voltage
amplification
VDD = 2.7 V
TA†
25°C
MIN
MAX
0.5
5
Full range
7
25°C
53
Full range
54
25°C
58
VDD = 5 V
Full range
57
VIC = 0 to VDD−1.35V,
RS = 50 Ω
25°C
67
VDD = 15 V
Full range
66
25°C
95
VDD = 2.7 V
Full range
76
25°C
80
VDD = 5 V
Full range
82
25°C
77
VDD = 15 V
Full range
79
UNIT
mV
µV/°C
2
25°C
VIC = 0 to VDD−1.35V,
RS = 50 Ω
VO(PP) = VDD/2,
RL = 10 kkΩ
TYP
70
80
dB
85
106
110
dB
115
† Full range is − 40°C to 125°C. If not specified, full range is − 40°C to 125°C.
input characteristics
PARAMETER
IIO
Input offset current
IIB
Input bias current
ri(d)
Differential input resistance
CIC
Common-mode input capacitance
TEST CONDITIONS
VDD = 15 V,
VIC = VDD/2,
VO = VDD/2, RS = 50 Ω
TA
25°C
MIN
TYP
1
125°C
25°C
1
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
UNIT
60
1000
125°C
f = 21 kHz
MAX
pA
60
1000
pA
25°C
1000
GΩ
25°C
8
pF
5
µ SGLS275 − OCTOBER 2004
electrical characteristics at specified free-air temperature, VDD = 2.7 V, 5 V, and 15 V (unless
otherwise noted)
output characteristics
PARAMETER
TEST CONDITIONS
VDD = 2.7 V
VIC = VDD/2, IOH = −1 mA
VOH
MIN
TYP
2.55
2.58
Full range
2.48
25°C
4.9
VDD = 5 V
Full range
4.85
25°C
14.92
VDD = 15 V
Full range
14.9
25°C
1.88
Full range
1.42
25°C
4.58
Full range
4.44
25°C
14.7
VDD = 15 V
Full range
14.6
VDD = 2.7 V
Full range
High-level output voltage
VDD = 2.7 V
VIC = VDD/2, IOH = −5 mA
TA†
25°C
VDD = 5 V
25°C
25°C
VIC = VDD/2, IOL = 1 mA
VDD = 5 V
VDD = 15 V
VOL
Low-level output voltage
VDD = 2.7 V
Full range
VDD = 5 V
Full range
25°C
VIC = VDD/2, IOL = 5 mA
25°C
VO = 0.5 V from rail, VDD = 2.7 V
IO
Output current
VO = 0.5 V from rail, VDD = 5 V
VO = 0.5 V from rail, VDD = 15 V
POST OFFICE BOX 655303
4.68
14.8
0.1
0.15
0.22
0.05
0.1
0.15
0.05
0.08
0.1
0.5
0.7
V
1.15
0.28
0.4
0.54
0.19
Full range
Positive rail
25°C
4
Negative rail
25°C
5
Positive rail
25°C
7
Negative rail
25°C
8
Positive rail
25°C
13
Negative rail
25°C
12
• DALLAS, TEXAS 75265
V
2.1
VDD = 15 V
† Full range is − 40°C to 125°C. If not specified, full range is − 40°C to 125°C.
‡ Depending on package dissipation rating
6
14.96
Full range
25°C
UNIT
4.93
Full range
25°C
MAX
0.3
0.35
mA
µ SGLS275 − OCTOBER 2004
electrical characteristics at specified free-air temperature, VDD = 2.7 V, 5 V, and 15 V (unless
otherwise noted) (continued)
power supply
PARAMETER
IDD
TEST CONDITIONS
Supply current (per channel)
VDD = 2.7 V
VDD = 5 V
VO = VDD/2
VDD = 15 V
PSRR
Supply voltage rejection ratio
(∆VDD /∆VIO)
VDD = 2.7 V to 15 V,
No load
VIC = VDD /2,
TA†
25°C
MIN
TYP
MAX
470
560
25°C
550
660
25°C
750
900
Full range
UNIT
µA
1200
25°C
70
Full range
65
80
dB
† Full range is − 40°C to 125°C. If not specified, full range is − 40°C to 125°C.
dynamic performance
PARAMETER
UGBW
Unity gain bandwidth
TA†
TEST CONDITIONS
RL = 2 kΩ,
kΩ CL = 10 pF
2.4
VDD = 5 V to 15 V
25°C
3
25°C
φm
ts
Slew rate at unity gain
VO(PP) = VDD/2,
CL = 50 pF, RL = 10 kkΩ,,
TYP
25°C
VDD = 2.7 V
SR
MIN
VDD = 2.7 V
Full range
1.4
MAX
MHz
2.1
V/ s
V/µs
1
25°C
1.4
VDD = 5 V
Full range
1.2
25°C
1.9
VDD = 15 V
Full range
1.4
UNIT
2.4
V/ s
V/µs
2.1
V/ s
V/µs
Phase margin
RL = 2 kΩ
CL = 10 pF
25°C
65
°
Gain margin
RL = 2 kΩ
CL = 10 pF
25°C
18
dB
Settling time
VDD = 2.7 V,
V(STEP)PP = 1 V, AV = −1,
CL = 10 pF, RL = 2 kΩ
VDD = 5 V, 15 V,
V(STEP)PP = 1 V, AV = −1,
CL = 47 pF, RL = 2 kΩ
0.1%
2.9
µss
25°C
0.1%
2
† Full range is − 40°C to 125°C. If not specified, full range is − 40°C to 125°C.
noise/distortion performance
PARAMETER
TEST CONDITIONS
VDD = 2.7 V,
VO(PP) = VDD/2 V,
RL = 2 kΩ,
k , f = 10 kHz
THD + N
Total harmonic distortion plus noise
VDD = 5 V, ±5 V,
VO(PP) = VDD/2 V,
RL = 2 kΩ,
k , f = 10K
AV = 1
AV = 10
TA
Equivalent input noise voltage
In
Equivalent input noise current
UNIT
0.05%
0.02%
25°C
25
C
0.09%
0.5%
39
25°C
f = 10 kHz
f = 1 kHz
POST OFFICE BOX 655303
MAX
0.18%
f = 1 kHz
Vn
TYP
0.02%
25°C
25
C
AV = 100
AV = 1
AV = 10
AV = 100
MIN
25°C
• DALLAS, TEXAS 75265
35
0.6
nV/√Hz
fA /√Hz
7
µ SGLS275 − OCTOBER 2004
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
CMRR
Common-mode rejection ratio
vs Frequency
Input bias and offset current
vs Free-air temperature
1
VOL
VOH
Low-level output voltage
vs Low-level output current
3, 5, 7
High-level output voltage
vs High-level output current
4, 6, 8
VO(PP)
IDD
Peak-to-peak output voltage
vs Frequency
9
Supply current
vs Supply voltage
10
PSRR
Power supply rejection ratio
vs Frequency
11
AVD
Differential voltage gain & phase
vs Frequency
12
Gain-bandwidth product
vs Free-air temperature
13
vs Supply voltage
14
2
SR
Slew rate
vs Free-air temperature
15
φm
Vn
Phase margin
vs Capacitive load
16
Equivalent input noise voltage
vs Frequency
17
Voltage-follower large-signal pulse response
18, 19
Voltage-follower small-signal pulse response
20
Inverting large-signal response
21, 22
Inverting small-signal response
Crosstalk
8
23
vs Frequency
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
24
µ SGLS275 − OCTOBER 2004
TYPICAL CHARACTERISTICS
100
VDD = 5 V, 10 V
80
60
VDD = 2.7 V
40
20
0
10
100
1k
100 k
10 k
1M
250
VDD = 2.7 V, 5 V and 10 V
VIC = VDD/2
200
150
100
50
0
−40 −25 −10 5
TA =−40°C
TA = 125°C
TA = 70°C
TA = 25°C
0.80
TA = 0°C
0.40
TA = 125 °C
4.00
TA = 70 °C
3.50
3.00
2.50
TA = 25 °C
2.00
1.50
TA = 0 °C
1.00
TA = −40 °C
0.50
1 2 3 4 5 6 7 8 9 10 11 12
IOH − High-Level Output Current − mA
8
TA =70°C
TA =25°C
TA =0°C
TA =−40°C
2
80
100
IOL − Low-Level Output Current − mA
Figure 7
3.00
2.50
TA = 25°C
2.00
1.50
TA = 70°C
1.00
TA = 125°C
0.50
5
10
10
VDD = 10 V
8
TA = −40°C
6
TA = 0°C
4
TA = 25°C
2
120
TA = 70°C
TA = 125°C
0
20
40
60
80
100
120
IOH − High-Level Output Current − mA
Figure 8
POST OFFICE BOX 655303
15
20
25
30
35
40
45
IOH − High-Level Output Current − mA
Figure 6
0
0
60
TA = 0°C
3.50
0
PEAK-TO-PEAK OUTPUT VOLTAGE
vs
FREQUENCY
V O(PP) − Peak-to-Peak Output Voltage − V
TA =125°C
40
TA = −40°C
4.00
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
IOL − Low-Level Output Current − mA
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
V OH − High-Level Output Voltage − V
VOL − Low-Level Output Voltage − V
VDD = 10 V
20
VCC = 5 V
4.50
Figure 5
10
0
2 4 6 8 10 12 14 16 18 20 22 24
IOL − Low-Level Output Current − mA
0.00
Figure 4
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
TA = 0 °C
TA = 40 °C
5.00
VDD = 5 V
4.50
0.00
4
0.40
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
V OH − High-Level Output Voltage − V
VOL − Low-Level Output Voltage − V
V OH − High-Level Output Voltage − V
2.40
6
TA = 70 °C
TA = 25 °C
0.80
Figure 3
5.00
VDD = 2.7 V
0
1.20
0
20 35 50 65 80 95 110 125
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
2.80
1.20
1.60
Figure 2
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
1.60
2.00
TA − Free-Air Temperature − °C
Figure 1
2.00
VDD = 2.7 V
2.40 T = 125 °C
A
0.00
−50
f − Frequency − Hz
0.00
2.80
300
VOL − Low-Level Output Voltage − V
120
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
INPUT BIAS AND OFFSET CURRENT
vs
FREE-AIR TEMPERATURE
I IB I IO − Input Bias and Offset Current − pA
CMRR − Common-Mode Rejection Ratio − dB
COMMON-MODE REJECTION RATIO
vs
FREQUENCY
• DALLAS, TEXAS 75265
11
VDD = 10 V
10
9
8
7
6
AV = −10
RL = 2 kΩ
CL = 10 pF
TA = 25°C
THD = 5%
5
VDD = 5 V
4
3
2
VDD = 2.7 V
1
0
10
100
1k
10 k
100 k
1M
10 M
f − Frequency − Hz
Figure 9
9
µ SGLS275 − OCTOBER 2004
TYPICAL CHARACTERISTICS
POWER SUPPLY REJECTION RATIO
vs
FREQUENCY
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
AV = 1
VIC = VDD / 2
I DD − Supply Current − mA/ch
0.9
PSRR − Power Supply Rejection Ratio − dB
1.0
TA = 125°C
0.8
TA = 70°C
0.7
0.6
0.5
0.4
TA = 25°C
0.3
TA = 0°C
0.2
TA = −40°C
0.1
0.0
120
TA = 25°C
100
VDD = 5 V, 10 V
80
VDD = 2.7 V
60
40
20
0
10
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
VDD − Supply Voltage − V
100
1k
DIFFERENTIAL VOLTAGE GAIN AND PHASE
vs
FREQUENCY
90
45
60
0
Gain
−45
20
−90
VDD=5 V
RL=2 kΩ
CL=10 pF
TA=25°C
−20
−40
10
100
−135
1k
10 k
100 k 1 M
−180
10 M
GBWP −Gain Bandwidth Product − MHz
Phase
Phase − °
AVD − Differential Voltage Gain − dB
4.0
135
100
0
3.5
VDD = 10 V
3.0
2.5
2.0
VDD = 5 V
VDD = 2.7 V
1.5
1.0
0.5
0.0
−40 −25 −10 5
Figure 13
Figure 12
SLEW RATE
vs
FREE-AIR TEMPERATURE
SLEW RATE
vs
SUPPLY VOLTAGE
3.5
3.0
SR+
1.0
AV = 1
RL = 10 kΩ
CL = 50 pF
TA = 25°C
0.5
2.5
4.5
6.5
8.5
10.5
12.5
VCC − Supply Voltage −V
Figure 14
10
80
SR−
2.5
2.0
SR+
1.5
VDD = 5 V
AV = 1
RL = 10 kΩ
CL = 50 pF
VI = 3 V
1.0
0.5
0.0
14.5
VDD = 5 V
RL= 2 kΩ
TA = 25°C
AV = Open Loop
90
0.0
−40 −25 −10 5
20 35 50 65 80 95 110 125
TA − Free-Air Temperature − °C
Figure 15
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Phase Margin − °
2.0
PHASE MARGIN
vs
CAPACITIVE LOAD
100
3.0
SR − Slew Rate − V/ µ s
SR − Slew Rate − V/ µ s
SR−
1.5
20 35 50 65 80 95 110 125
TA − Free-Air Temperature − °C
f − Frequency − Hz
2.5
1M
GAIN BANDWIDTH PRODUCT
vs
FREE-AIR TEMPERATURE
180
120
40
100 k
Figure 11
Figure 10
80
10 k
f − Frequency − Hz
70
Rnull = 100
60
50
40
Rnull = 0
30
Rnull = 50
20
10
0
10
100
CL − Capacitive Load − pF
Figure 16
1000
µ SGLS275 − OCTOBER 2004
TYPICAL CHARACTERISTICS
VOLTAGE-FOLLOWER LARGE-SIGNAL
PULSE RESPONSE
VDD = 2.7, 5, 10 V
TA = 25°C
90
4
80
70
60
50
3
2
1
VDD = 5 V
AV = 1
RL = 2 kΩ
CL = 10 pF
VI = 3 VPP
TA = 25°C
VI
0
40
3
30
2
20
1
VO
10
0
0
100
1k
10 k
f − Frequency − Hz
0
100 k
2
6
4
2
VO
0
0
2
4
6
8
0.12
0.08
VDD = 5 V
AV = 1
RL = 2 kΩ
CL = 10 pF
VI = 100 mVPP
TA = 25°C
0.04
VI
0.00
0.04
VO
0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
10 12 14 16 18
t − Time − µs
Figure 20
Figure 19
4
VDD = 5 V
AV = 1
RL = 2 kΩ
CL = 10 pF
VI = 3 VPP
TA = 25°C
1
0
3
2
1
0
VO
0
2
4
6
8
10
12
14
V − Output Voltage − V
O
VI
16
INVERTING LARGE-SIGNAL RESPONSE
V I − Input Voltage − V
INVERTING LARGE-SIGNAL RESPONSE
2
0.12
0.08
t − Time − µs
3
10 12 14 16 18
V − Output Voltage − mV
O
0
V − Output Voltage − V
O
VDD = 10 V
AV = 1
RL = 2 kΩ
CL = 10 pF
VI = 6 VPP
TA = 25°C
V − Input Voltage − mV
I
V − Input Voltage − V
I
6
VI
8
VOLTAGE-FOLLOWER SMALL-SIGNAL
PULSE RESPONSE
8
2
6
Figure 18
VOLTAGE-FOLLOWER LARGE-SIGNAL
PULSE RESPONSE
4
4
t − Time − µs
8
6
VDD = 10 V
AV = VI = −1
RL = 2 kΩ
CL = 10 pF
TA = 25°C
4
2
0
VI
6
VO
4
2
0
0
t − Time − µs
2
4
6
8
10
t − Time − µs
12
14
V O − Output Voltage − V
10
Figure 17
V − Input Voltage − V
I
V − Output Voltage − V
O
100
V − Input Voltage − V
I
V n − Equivalent Input Noise Voltage − nV/
Hz
EQUIVALENT INPUT NOISE VOLTAGE
vs
FREQUENCY
16
Figure 22
Figure 21
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11
µ SGLS275 − OCTOBER 2004
TYPICAL CHARACTERISTICS
CROSSTALK
vs
FREQUENCY
0
0.00
VDD = 5 V
AV = VI = −1
RL = 2 kΩ
CL = 10 pF
VI = 100 mVpp
TA = 25°C
−40
VI
0.10
VO
0.05
0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Crosstalk − dB
0.05
VDD = 2.7, 5, & 15 V
VI = 1 VDD/2
AV = 1
RL = 2 kΩ
TA = 25°C
−20
0.10
V O − Output Voltage − V
V I − Input Voltage − V
INVERTING SMALL-SIGNAL RESPONSE
−60
−80
−100
Crosstalk
−120
−140
10
100
1k
10 k
f − Frequency − Hz
t − Time − µs
100 k
Figure 24
Figure 23
APPLICATION INFORMATION
driving a capacitive load
When the amplifier is configured in this manner, capacitive loading directly on the output decreases the device’s
phase margin leading to high frequency ringing or oscillations. Therefore, for capacitive loads of greater than
10 pF, it is recommended that a resistor be placed in series (RNULL) with the output of the amplifier, as shown
in Figure 25. A minimum value of 20 Ω should work well for most applications.
RF
RG
−
Input
+
RNULL
Output
CLOAD
VDD/2
Figure 25. Driving a Capacitive Load
12
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µ SGLS275 − OCTOBER 2004
APPLICATION INFORMATION
offset voltage
The output offset voltage (VOO) is the sum of the input offset voltage (VIO) and both input bias currents (IIB) times
the corresponding gains. The following schematic and formula can be used to calculate the output offset
voltage:
RF
RG
IIB−
+
−
VI
RS
V
VO
+
OO
+V
IO
ǒ ǒ ǓǓ
R
1)
R
F
"I
G
IB)
R
S
ǒ ǒ ǓǓ
1)
R
R
F
G
"I
IB–
R
F
IIB+
Figure 26. Output Offset Voltage Model
general configurations
When receiving low-level signals, limiting the bandwidth of the incoming signals into the system is often
required. The simplest way to accomplish this is to place an RC filter at the noninverting terminal of the amplifier
(see Figure 27).
RG
RF
O +
V
I
VDD/2
VI
V
ǒ
1)
R
R
F
G
Ǔǒ
Ǔ
1
1 ) sR1C1
−
VO
+
R1
f
–3dB
+
1
2pR1C1
C1
Figure 27. Single-Pole Low-Pass Filter
If even more attenuation is needed, a multiple pole filter is required. The Sallen-Key filter can be used for this
task. For the best results, the amplifier should have a bandwidth that is 8 to 10 times the filter frequency
bandwidth. Failure to do this can result in phase shift of the amplifier.
C1
+
_
VI
R1
R1 = R2 = R
C1 = C2 = C
Q = Peaking Factor
(Butterworth Q = 0.707)
R2
f
C2
RF
RG
–3dB
RG =
+
(
1
2pRC
RF
1
2−
Q
)
VDD/2
Figure 28. 2-Pole Low-Pass Sallen-Key Filter
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
13
µ SGLS275 − OCTOBER 2004
APPLICATION INFORMATION
circuit layout considerations
To achieve the levels of high performance of the TLV27x, follow proper printed-circuit board design techniques.
A general set of guidelines is given in the following.
D Ground planes—It is highly recommended that a ground plane be used on the board to provide all
components with a low inductive ground connection. However, in the areas of the amplifier inputs and
output, the ground plane can be removed to minimize the stray capacitance.
D Proper power supply decoupling—Use a 6.8-µF tantalum capacitor in parallel with a 0.1-µF ceramic
capacitor on each supply terminal. It may be possible to share the tantalum among several amplifiers
depending on the application, but a 0.1-µF ceramic capacitor should always be used on the supply terminal
of every amplifier. In addition, the 0.1-µF capacitor should be placed as close as possible to the supply
terminal. As this distance increases, the inductance in the connecting trace makes the capacitor less
effective. The designer should strive for distances of less than 0.1 inches between the device power
terminals and the ceramic capacitors.
D Sockets—Sockets can be used but are not recommended. The additional lead inductance in the socket pins
will often lead to stability problems. Surface-mount packages soldered directly to the printed-circuit board
is the best implementation.
D Short trace runs/compact part placements—Optimum high performance is achieved when stray series
inductance has been minimized. To realize this, the circuit layout should be made as compact as possible,
thereby minimizing the length of all trace runs. Particular attention should be paid to the inverting input of
the amplifier. Its length should be kept as short as possible. This helps to minimize stray capacitance at the
input of the amplifier.
D Surface-mount passive components—Using surface-mount passive components is recommended for high
performance amplifier circuits for several reasons. First, because of the extremely low lead inductance of
surface-mount components, the problem with stray series inductance is greatly reduced. Second, the small
size of surface-mount components naturally leads to a more compact layout thereby minimizing both stray
inductance and capacitance. If leaded components are used, it is recommended that the lead lengths be
kept as short as possible.
14
POST OFFICE BOX 655303
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µ SGLS275 − OCTOBER 2004
APPLICATION INFORMATION
general power dissipation considerations
For a given θJA, the maximum power dissipation is shown in Figure 29 and is calculated by the following formula:
P
D
+
Where:
ǒ
T
Ǔ
–T
MAX A
q
JA
PD = Maximum power dissipation of TLV27x IC (watts)
TMAX = Absolute maximum junction temperature (150°C)
TA
= Free-ambient air temperature (°C)
θJA = θJC + θCA
θJC = Thermal coefficient from junction to case
θCA = Thermal coefficient from case to ambient air (°C/W)
MAXIMUM POWER DISSIPATION
vs
FREE-AIR TEMPERATURE
2
Maximum Power Dissipation − W
1.75
PDIP Package
Low-K Test PCB
θJA = 104°C/W
1.5
1.25
TJ = 150°C
MSOP Package
Low-K Test PCB
θJA = 260°C/W
SOIC Package
Low-K Test PCB
θJA = 176°C/W
1
0.75
0.5
0.25
SOT-23 Package
Low-K Test PCB
θJA = 324°C/W
0
−55 −40 −25 −10 5
20 35 50 65 80 95 110 125
TA − Free-Air Temperature − °C
NOTE A: Results are with no air flow and using JEDEC Standard Low-K test PCB.
Figure 29. Maximum Power Dissipation vs Free-Air Temperature
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• DALLAS, TEXAS 75265
15
µ SGLS275 − OCTOBER 2004
APPLICATION INFORMATION
macromodel information
Macromodel information provided was derived using Microsim Parts Release 9.1, the model generation
software used with Microsim PSpice . The Boyle macromodel (see Note 2) and subcircuit in Figure 30 are
generated using TLV27x typical electrical and operating characteristics at TA = 25°C. Using this information,
output simulations of the following key parameters can be generated to a tolerance of 20% (in most cases):
D Maximum positive output voltage swing
D Unity-gain frequency
D Maximum negative output voltage swing
D Common-mode rejection ratio
D Slew rate
D Phase margin
D Quiescent power dissipation
D DC output resistance
D Input bias current
D AC output resistance
D Open-loop voltage amplification
D Short-circuit output current limit
NOTE 2: G. R. Boyle, B. M. Cohn, D. O. Pederson, and J. E. Solomon, “Macromodeling of Integrated Circuit Operational Amplifiers,” IEEE Journal
of Solid-State Circuits, SC-9, 353 (1974).
3
99
VDD
+
egnd
rd1
rd2
rss
ro2
css
fb
rp
−
c1
7
11
12
+
c2
vlim
1
r2
+
9
6
IN+
−
vc
D
D
8
+
−
vb
ga
2
G
G
−
IN−
ro1
gcm
ioff
53
S
S
OUT
dp
91
10
iss
GND
4
dlp
+
dc
−
ve
+ 54
vlp
−
+
hlim
−
5
92
−
vln
+
de
*DEVICE=amp_tlv27x_highVdd,OP AMP,NJF,INT
* amp_tlv_27x_highVdd operational amplifier ”macromodel”
* subcircuit updated using Model Editor release 9.1 on 05/15/00
* at 14:40 Model Editor is an OrCAD product.
*
* connections:
non-inverting input
*
| inverting input
*
| | positive power supply
*
| | | negative power supply
*
| | | | output
*
| | | | |
.subckt amp_tlv27x_highVdd 1 2 3 4 5
*
c1
11
12 457.48E−15
c2
6
7
5.0000E−12
css
10
99 1.1431E−12
dc
5
53 dy
de
54
5
dy
dlp
90
91 dx
dln
92
90 dx
dp
4
3
dx
egnd
99
0
poly(2) (3,0) (4,0) 0 .5 .5
fb
7
99 poly(5) vb vc ve vlp vln 0
176.02E6 −1E3 1E3 180E6
−180E6
ga
gcm
iss
hlim
j1
J2
r2
rd1
rd2
ro1
ro2
rp
rss
vb
vc
ve
vlim
vlp
vln
.model
.model
.model
.model
.ends
6
0
10
90
11
12
6
3
3
8
7
3
10
9
3
54
7
91
0
dx
dy
jx1
jx2
0
11 12 16.272E−6
6
10 99 6.8698E−9
4
dc 1.3371E−6
0
vlim 1K
2
10 jx1
1
10 jx2
9
100.00E3
11
61.456E3
12
61.456E3
5
10
99
10
4
150.51E3
99
149.58E6
0
dc 0
53
dc .78905
4
dc .78905
8
dc 0
0
dc 14.200
92
dc 14.200
D(Is=800.00E−18)
D(Is=800.00E−18 Rs=1m Cjo=10p)
NJF(Is=500.00E−15 Beta=198.03E−6 Vto=−1)
NJF(Is=500.00E−15 Beta=198.03E−6 Vto=−1)
Figure 30. Boyle Macromodel and Subcircuit
PSpice and Parts are trademarks of MicroSim Corporation.
16
90
dln
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
PACKAGE OPTION ADDENDUM
www.ti.com
25-Feb-2005
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TLV271QDBVRQ1
ACTIVE
SOT-23
DBV
5
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLV271QDRQ1
ACTIVE
SOIC
D
8
2500
Pb-Free
(RoHS)
CU NIPDAU
Level-2-250C-1 YEAR/
Level-1-235C-UNLIM
TLV272QDRQ1
ACTIVE
SOIC
D
8
2500
Pb-Free
(RoHS)
CU NIPDAU
Level-2-250C-1 YEAR/
Level-1-235C-UNLIM
TLV274QDRQ1
ACTIVE
SOIC
D
14
2500
Pb-Free
(RoHS)
CU NIPDAU
Level-2-250C-1 YEAR/
Level-1-235C-UNLIM
TLV274QPWRQ1
ACTIVE
TSSOP
PW
14
2000
None
CU NIPDAU
Level-1-250C-UNLIM
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - May not be currently available - please check http://www.ti.com/productcontent for the latest availability information and additional
product content details.
None: Not yet available Lead (Pb-Free).
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Green (RoHS & no Sb/Br): TI defines "Green" to mean "Pb-Free" and in addition, uses package materials that do not contain halogens,
including bromine (Br) or antimony (Sb) above 0.1% of total product weight.
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDECindustry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
MECHANICAL DATA
MTSS001C – JANUARY 1995 – REVISED FEBRUARY 1999
PW (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
14 PINS SHOWN
0,30
0,19
0,65
14
0,10 M
8
0,15 NOM
4,50
4,30
6,60
6,20
Gage Plane
0,25
1
7
0°– 8°
A
0,75
0,50
Seating Plane
0,15
0,05
1,20 MAX
PINS **
0,10
8
14
16
20
24
28
A MAX
3,10
5,10
5,10
6,60
7,90
9,80
A MIN
2,90
4,90
4,90
6,40
7,70
9,60
DIM
4040064/F 01/97
NOTES: A.
B.
C.
D.
All linear dimensions are in millimeters.
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusion not to exceed 0,15.
Falls within JEDEC MO-153
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
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