TI TRF3702IRHCR

TRF3702
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SLWS149A – SEPTEMBER 2004 – REVISED AUGUST 2006
1.5-GHz to 2.5-GHz QUADRATURE MODULATOR
FEATURES
•
•
•
•
•
APPLICATIONS
•
•
•
•
•
•
•
•
Cellular Base Transceiver Station Transmit
Channel
IF Sampling Applications
TDMA: GSM, IS-136, EDGE/UWC-136
CDMA: IS-95, UMTS, CDMA2000
Wireless Local Loop
Wireless LAN IEEE 802.11
LMDS, MMDS
Wideband Transceivers
RHC PACKAGE
(TOP VIEW)
GND
QREF
IREF
IVIN
QVIN
•
•
71-dBc Single-Carrier WCDMA ACPR at
–14-dBm Channel Power
P1dB of 7 dBm
Typical Unadjusted Carrier Suppression
35 dBc at 2 GHz
Typical Unadjusted Sideband Suppression
35 dBc at 2 GHz
Very Low Noise Floor
Differential or Single-Ended I, Q Inputs
Convenient Single-Ended LO Input
Silicon Germanium Technology
1 16 15 14 13
GND
GND
LO
2
3
12
11
4
10
5 6 7 8
GND
GND
VCC
9
GND
VCC
PWD
RFOUT
GND
•
P0003-01
DESCRIPTION
The TRF3702 is an ultralow-noise direct quadrature modulator that is capable of converting complex input
signals from baseband or IF directly up to RF. An internal analog combiner sums the real and imaginary
components of the RF outputs. This combined output can feed the RF preamp at frequencies of up to 2.5 GHz.
The modulator is implemented as a double-balanced mixer. An internal local oscillator (LO) phase splitter
accommodates a single-ended LO input, eliminating the need for a costly external balun.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2004–2006, Texas Instruments Incorporated
TRF3702
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SLWS149A – SEPTEMBER 2004 – REVISED AUGUST 2006
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
AVAILABLE OPTIONS
4-mm × 4-mm 16-Pin RHC (QFN) Package (1)
TA
–40°C to 85°C
(1)
TRF3702IRHC
TRF3702IRHCR (Tape and reel)
For the most current package and ordering information, see the
Package Option Addendum at the end of this document, or see the
TI website at www.ti.com.
FUNCTIONAL BLOCK DIAGRAM
VCC
IVIN
IREF
+45°
LO
–45°
Σ
RFOUT
50 Ω
QVIN
QREF
PWD
GND
B0002-01
2
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GND
QREF
IREF
IVIN
QVIN
RHC PACKAGE
(TOP VIEW)
1 16 15 14 13
GND
GND
LO
2
3
12
11
4
10
9
GND
VCC
PWD
RFOUT
GND
5 6 7 8
GND
GND
VCC
P0003-01
TERMINAL FUNCTIONS
TERMINAL
NAME
NO.
I/O
DESCRIPTION
GND
1, 2, 3, 5, 9, 11, 12
IREF
15
I
In-phase (I) reference voltage/differential input
IVIN
14
I
In-phase (I) signal input
LO
4
I
Local oscillator input
PWD
7
I
Power down
QREF
16
I
Quadrature (Q) reference voltage/differential input
QVIN
13
I
Quadrature (Q) signal input
8
O
RF output
RFOUT
VCC
Ground
6, 10
Supply voltage
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted) (1) (2)
VCC
TA
Supply voltage range
–0.5 V to 6 V
LO input power level
10 dBm
Baseband input voltage level (single-ended)
3 Vp-p
Operating free-air temperature range
–40°C to 85°C
Lead temperature for 10 seconds
(1)
(2)
260°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Measured with respect to ground
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RECOMMENDED OPERATING CONDITIONS
MIN
NOM
MAX
5
5.5
UNIT
Supplies and References
VCC
Analog supply voltage
4.5
VCM (IVIN, QVIN, IREF, QREF input common-mode voltage)
3.7
V
V
Local Oscillator (LO) Input
Input frequency
1500
Power level (measured into 50 Ω)
–6
2500
MHz
6
dBm
0
Signal Inputs (IVIN, QVIN)
Input bandwidth
700
MHz
ELECTRICAL CHARACTERISTICS
Over recommended operating conditions, VCC = 5 V, VCM = 3.7 V, fLO = 2140 MHz at 0 dBm, TA = 25°C (unless otherwise
noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
V(PWD) = 5 V
145
170
V(PWD) = 0 V
13
30
UNIT
Power Supply
ICC
Total supply current
mA
Turnon time
120
Turnoff time
20
ns
ns
Power-down input impedance
11
kΩ
27 + j8
Ω
16
µA
Local Oscillator (LO) Input
Input impedance (1)
Signal Inputs (IVIN, QVIN, IREF, QREF)
Input bias current
I, Q = VCM = 3.7 V (all inputs tied to VCM)
Input impedance
(1)
Single-ended input
260
Differential input
130
For a listing of impedances at various frequencies, see Table 1.
Table 1. RFOUT and LO Pin Impedance
4
Frequency (MHz)
Z (RFOUT Pin)
Z (LO Pin)
1500
31 – j 4.7
31.7 – j 8.8
1600
30.9 – j 0.3
29.3 – j 6.2
1700
29.3 + j 3.1
27.3 - j 3.1
1800
27.9 + j 7.2
26.5 – j 0.17
1900
27.6 + j 13
26.1+ – j 2.7
2000
29.4 +j 19.8
26.5 + j 5.4
2100
34.6 + j 27.2
27 + j 7.6
2200
44.2 + j 33
28 + j 9.5
2300
60 + j 33.6
29 + j 10.6
2400
78 + j 21
29.5 + j 11
2500
82 – j 5.8
29.8 + j 12.2
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RF OUTPUT PERFORMANCE
Over recommended operating conditions, VCC = 5 V, VCM = 3.7 V, fLO = 1842 MHz at 0 dBm (unless otherwise specified)
PARAMETER
TEST CONDITIONS
MIN
TYP
–5
–2.5
MAX
UNIT
Single and Two-Tone Specifications
Output power
Second baseband harmonic
(USB or LSB) (2)
I, Q (1) = 1 Vp-p, fBB = 928 kHz
–50
–42
dBc
Third baseband harmonic
(USB or LSB) (2)
–57
–50
dBc
–59
–53
dBc
IMD3
I, Q (1) = 1 Vp-p (two-tone signal, fBB1 = 928 kHz,
fBB2 = 992 kHz)
P1dB (output compression
point)
NSD
Noise spectral density
7
I, Q = VCM = 3.7 VDC (all inputs tied to VCM), 6-MHz offset
from carrier
–148.5
RFOUT pin impedance (4)
Carrier suppression
30
I, Q (1) = 1 Vp-p, fBB = 928 kHz, optimized
55
Q (1)
= 1 Vp-p, fBB = 928 kHz, over
temperature (5)
Ω
35
I, Q (1) = 1 Vp-p, fBB = 928 kHz, optimized
55
Q (1)
= 1 Vp-p, fBB = 928 kHz, over
dBc
44
I, Q (1) = 1 Vp-p, fBB = 928 kHz, unadjusted
I,
(4)
(5)
dBm/Hz
–146.5 (3)
28 + j8
I, Q (1) = 1 Vp-p, fBB = 928 kHz, unadjusted
I,
Sideband suppression
dBm
–155
6-MHz offset from carrier, Pout = 0 dBm, over temperature
(1)
(2)
(3)
dBm
temperature (5)
dBc
47
I , Q = 1 Vp-p implies that the magnitude of the signal at each input pin IVIN, IREF, QVIN, QREF is equal to 500 mVp-p.
USB = upper sideband. LSB = lower sideband.
Maximum noise values are assured by statistical characterization only, not production testing. The values specified are over the entire
temperature range, TA = –40°C to 85°C.
For a listing of impedances at various frequencies, see Table 1.
After optimization at room temperature. See the Definitions of Selected Specifications section.
RF OUTPUT PERFORMANCE
Over recommended operating conditions, VCC = 5 V, VCM = 3.7 V, fLO = 1960 MHz at 0 dBm (unless otherwise specified)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Single and Two-Tone Specifications
Output power
–3
dBm
Second baseband harmonic
(USB or LSB) (2)
I, Q (1) = 1 Vp-p, fBB = 928 kHz
–50
dBc
Third baseband harmonic
(USB or LSB) (2)
–60
dBc
IMD3
Q (1)
I,
= 1 Vp-p (two-tone signal, fBB1 = 928 kHz,
fBB2 = 992 kHz)
P1dB (output compression
point)
NSD
Noise spectral density
Sideband suppression
(1)
(2)
(3)
(4)
–53
7
6-MHz offset from carrier, Pout = 0 dBm, over temperature
RFOUT pin impedance (4)
Carrier suppression
–59
–148
28 + j15
I,
Q (1)
= 1 Vp-p, fBB = 928 kHz, unadjusted
33
I, Q (1) = 1 Vp-p, fBB = 928 kHz, optimized
55
I, Q (1) = 1 Vp-p, fBB = 928 kHz, unadjusted
35
I,
Q (1)
= 1 Vp-p, fBB = 928 kHz, optimized
55
dBc
dBm
–146.5 (3)
dBm/Hz
Ω
dBc
dBc
I , Q = 1 Vp-p implies that the magnitude of the signal at each input pin IVIN, IREF, QVIN, QREF is equal to 500 mVp-p.
USB = upper sideband. LSB = lower sideband.
Maximum noise values are assured by statistical characterization only, not production testing. The values specified are over the entire
temperature range, TA = –40°C to 85°C.
For a listing of impedances at various frequencies, see Table 1.
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RF OUTPUT PERFORMANCE
Over recommended operating conditions, VCC = 5 V, VCM = 3.7 V, fLO = 2.1 GHz at 0 dBm (unless otherwise specified)
PARAMETER
TEST CONDITIONS
MIN
TYP
–5
–3
MAX
UNIT
Single and Two-Tone Specifications
Output power
Second baseband harmonic
(USB or LSB) (2)
I, Q (1) = 1 Vp-p, fBB = 928 kHz
–50
–42
dBc
Third baseband harmonic
(USB or LSB) (2)
–60
–51
dBc
–55
–47
dBc
I, Q (1) = 1 Vp-p, fBB = 928 kHz (two-tone signal,
fBB1 = 928 kHz, fBB2 = 992 kHz)
IMD3
P1dB (output compression
point)
NSD
60-MHz offset from carrier, Pout = 0 dBm, over temperature
WCDMA ACPR
Single carrier, channel power = –14 dBm
Sideband suppression
–151
dBm
–148.5 (3) dBm/Hz
71
impedance (4)
Carrier suppression
(4)
(5)
7
Noise spectral density
RFOUT pin
(1)
(2)
(3)
dBm
dBc
Ω
35 + j27
I, Q (1) = 1 Vp-p, fBB = 928 kHz, unadjusted
30
I, Q (1) = 1 Vp-p, fBB = 928 kHz, optimized
55
I, Q (1) = 1 Vp-p, fBB = 928 kHz, over temperature (5)
47
I, Q (1) = 1 Vp-p, fBB = 928 kHz, unadjusted
37
I, Q (1) = 1 Vp-p, fBB = 928 kHz, optimized
55
I, Q (1) = 1 Vp-p, fBB = 928 kHz, over temperature (5)
47
dBc
dBc
I , Q = 1 Vp-p implies that the magnitude of the signal at each input pin IVIN, IREF, QVIN, QREF is equal to 500 mVp-p.
USB = upper sideband. LSB = lower sideband.
Maximum noise values are assured by statistical characterization only, not production testing. The values specified are over the entire
temperature range, TA = –40°C to 85°C.
For a listing of impedances at various frequencies, see Table 1.
After optimization at room temperature. See the Definitions of Selected Specifications section.
THERMAL CHARACTERISTICS
PARAMETER
CONDITION
RθJA
Thermal resistace, junction to ambient
RθJM
Thermal resistace, junction to mounting
surface
RθJC
Thermal resistace, junction to case
Soldered pad using four-layer JEDEC board with four thermal vias
Soldered pad using two-layer JEDEC board with four thermal vias
NOM
UNIT
42.8
°C/W
24.8
°C/W
67.6
°C/W
DEFINITIONS OF SELECTED SPECIFICATIONS
Unadjusted Carrier Suppression
This specification measures the amount by which the local oscillator component is attenuated in the output
spectrum of the modulator relative to the carrier. It is assumed that the baseband inputs delivered to the pins of
the TRF3702 are perfectly matched to have the same dc offset (VCM). This includes all four baseband inputs:
IVIN, QVIN, IREF and QREF. Unadjusted carrier suppression is measured in dBc.
Adjusted (Optimized) Carrier Suppression
This differs from the unadjusted suppression number in that the dc offsets of the baseband inputs are iteratively
adjusted around their theoretical value of VCM to yield the maximum suppression of the LO component in the
output spectrum. Adjusted carrier suppression is measured in dBc.
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DEFINITIONS OF SELECTED SPECIFICATIONS (continued)
Unadjusted Sideband Suppression
This specification measures the amount by which the unwanted sideband of the input signal is attenuated in the
output of the modulator, relative to the wanted sideband. It is assumed that the baseband inputs delivered to the
modulator input pins are perfectly matched in amplitude and are exactly 90° out of phase. Unadjusted sideband
suppression is measured in dBc.
Adjusted (Optimized) Sideband Suppression
This differs from the unadjusted sideband suppression in that the baseband inputs are iteratively adjusted
around their theoretical values to maximize the amount of sideband suppression. Adjusted sideband
suppression is measured in dBc.
Suppressions Over Temperature
This specification assumes that the user has gone through the optimization process for the suppression in
question, and set the optimal settings for the I, Q inputs at TA = 25°C. This specification then measures the
suppression when temperature conditions change after the initial calibration is done.
Figure 1 shows a simulated output and illustrates the respective definitions of various terms used in this data
sheet. The graph assumes a baseband input of 50 kHz.
10
POUT
0
P − Power − dBm
−10
−20
3RD LSB
(dBc)
SBS
(dBc)
3RD LSB
LSB
(Undesired)
2ND USB
(dBc)
CS
(dBc)
−30
−40
−50
−60
−70
2ND LSB
−80
−200 −150 −100 −50
USB
(Desired)
2ND USB
Carrier
0
3RD USB
50
100
150
200
f − Frequency Offset − kHz (Relative to Carrier)
G007
Figure 1. Graphical Illustration of Common Terms
TYPICAL CHARACTERISTICS
For all the performance plots in this section, the following conditions were used, unless otherwise noted:
VCC = 5 V, VCM = 3.7 V, PLO = 0 dBm, I and Q inputs driven differentially at a frequency of 50 kHz. In the case
of optimized suppressions, the point of optimization is noted and is always at nominal conditions and room
temperature. A level of >50 dBc is assumed to be optimized.
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TYPICAL CHARACTERISTICS (continued)
OUTPUT POWER
vs
I, Q AMPLITUDE
OUTPUT POWER
vs
I, Q AMPLITUDE
10
10
5
–40°C
POUT − Output Power − dBm
POUT − Output Power − dBm
5
0
25°C
−5
85°C
−10
−15
−20
–40°C
0
85°C
25°C
−5
−10
−15
−20
fLO = 1842 MHz
fLO = 1960 MHz
−25
−25
0
1
2
3
4
I, Q Amplitude − VPP
0
3
4
G001
G002
Figure 2.
Figure 3.
OUTPUT POWER
vs
I, Q AMPLITUDE
UNADJUSTED CARRIER SUPPRESSION
vs
FREQUENCY
CS − Unadjusted Carrier Suppression − dBc
45
5
POUT − Output Power − dBm
2
I, Q Amplitude − VPP
10
–40°C
0
85°C
25°C
−5
−10
−15
−20
fLO = 2.1 GHz
−25
0
1
2
I, Q Amplitude − VPP
3
40
30
25°C
25
20
15
10
5
0
1400
4
–40°C
85°C
35
G003
Figure 4.
8
1
1600
1800
2000
Figure 5.
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2200
fLO − Frequency − MHz
2400
2600
G020
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TYPICAL CHARACTERISTICS (continued)
UNADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY
UNADJUSTED CARRIER SUPPRESSION
vs
OUTPUT POWER
50
60
CS − Unadjusted Carrier Suppression − dBc
SS − Unadjusted Sideband Suppression − dBc
65
85°C
55
50
45
25°C
40
35
30
–40°C
25
20
15
10
5
0
1400
1600
1800
2000
2200
2400
fLO − Frequency − MHz
fLO = 1960 MHz
25°C
40
35
30
85°C
25
20
15
–40°C
10
5
0
−25
2600
−20
−15
−10
G021
0
Figure 6.
Figure 7.
UNADJUSTED SIDEBAND SUPPRESSION
vs
OUTPUT POWER
CARRIER SUPPRESSION
vs
FREQUENCY
5
10
G008
80
Optimization
Point
85°C
70
–40°C
30
CS − Carrier Suppression − dBc
40
25°C
20
10
−20
−15
−10
−5
0
POUT − Output Power − dBm
5
25°C
60
50
40
30
–40°C
POUT = 0 dBm
Optimized at 1960 MHz
0
1880
10
85°C
20
10
fLO = 1960 MHz
0
−25
−5
POUT − Output Power − dBm
50
SS − Unadjusted Sideband Suppression − dBc
45
G011
Figure 8.
1900
1920
1940
1960
1980
fLO − Frequency − MHz
2000
2020
G025
Figure 9.
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TYPICAL CHARACTERISTICS (continued)
CARRIER SUPPRESSION
vs
VCM
CARRIER SUPPRESSION
vs
SUPPLY VOLTAGE
80
90
Optimization
Point
70
25°C
–40°C
60
50
40
30
85°C
20
10
POUT = 0 dBm
fLO = 1960 MHz
Optimized at 3.7 V
0
3.0
60
50
40
30
4.0
–40°C
POUT = 0 dBm
fLO = 1960 MHz
Optimized at 5 V
0
4.4
4.5
85°C
20
10
3.5
Optimization
Point
25°C
70
CS − Carrier Suppression − dBc
CS − Carrier Suppression − dBc
80
4.6
4.8
5.0
5.2
5.4
VCC − Supply Voltage − V
VCM − V
G034
G028
Figure 10.
Figure 11.
CARRIER SUPPRESSION
vs
LOCAL OSCILLATOR INPUT POWER
SIDEBAND SUPPRESSION
vs
FREQUENCY
80
80
25°C
Optimization
Point
25°C
60
50
40
30
–40°C
85°C
20
10
0
−12
POUT = 0 dBm
fLO = 1960 MHz
Optimized at 0 dBm
−9
−6
−3
85°C
70
SS − Sideband Suppression − dBc
CS − Carrier Suppression − dBc
70
60
50
40
0
3
6
9
12
Optimization
Point
–40°C
30
20
10
PLO − Local Oscillator Input Power − dBm
POUT = 0 dBm
Optimized at 1960 MHz
0
1880
G039
Figure 12.
10
5.6
1900
1920
1940
1960
Figure 13.
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1980
fLO − Frequency − MHz
2000
2020
G026
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TYPICAL CHARACTERISTICS (continued)
SIDEBAND SUPPRESSION
vs
VCM
SIDEBAND SUPPRESSION
vs
SUPPLY VOLTAGE
80
90
85°C
25°C
70
60
50
–40°C
40
Optimization
Point
30
20
10
POUT = 0 dBm
fLO = 1960 MHz
Optimized at 3.7 V
0
3.0
60
50
4.0
–40°C
40
Optimization
Point
30
20
10
3.5
POUT = 0 dBm
fLO = 1960 MHz
Optimized at 5 V
0
4.4
4.5
85°C
25°C
70
SS − Sideband Suppression − dBc
SS − Sideband Suppression − dBc
80
4.6
4.8
5.0
5.2
VCC − Supply Voltage − V
VCM − V
G029
Figure 14.
Figure 15.
SIDEBAND SUPPRESSION
vs
LOCAL OSCILLATOR INPUT POWER
CARRIER SUPPRESSION
vs
FREQUENCY
80
85°C
CS − Carrier Suppression − dBc
SS − Sideband Suppression − dBc
75
–40°C
G035
Optimization
Point
70
60
50
25°C
40
Optimization
Point
30
20
0
−12
5.6
80
70
10
5.4
POUT = 0 dBm
fLO = 1960 MHz
Optimized at 0 dBm
−9
−6
−3
65
60
55
50
45
40
35
30
25
0
3
6
9
PLO − Local Oscillator Input Power − dBm
12
POUT = 0 dBm
TA = 25°C
fLO = 1842 MHz
Optimized at 1842 MHz
20
1780 1800 1820 1840 1860 1880 1900 1920 1940
G040
Figure 16.
fLO − Frequency − MHz
G017
Figure 17.
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TYPICAL CHARACTERISTICS (continued)
CARRIER SUPPRESSION
vs
VCM
CARRIER SUPPRESSION
vs
SUPPLY VOLTAGE
90
Optimization
Point
70
60
50
40
30
20
10
POUT = 0 dBm
TA = 25°C
fLO = 1842 MHz
Optimized at 3.7 V
0
3.0
Optimization
Point
70
CS − Carrier Suppression − dBc
CS − Carrier Suppression − dBc
80
80
60
50
40
30
20
10
3.5
4.0
POUT = 0 dBm
TA = 25°C
fLO = 1842 MHz
Optimized at 5 V
0
4.4
4.5
4.6
VCM − V
Figure 19.
CARRIER SUPPRESSION
vs
LOCAL OSCILLATOR INPUT POWER
SIDEBAND SUPPRESSION
vs
FREQUENCY
SS − Sideband Suppression − dBc
CS − Carrier Suppression − dBc
5.6
G044
Optimization
Point
Optimization
Point
50
40
30
20
POUT = 0 dBm
TA = 25°C
fLO = 1842 MHz
Optimized at 0 dBm
−9
−6
−3
0
3
6
9
PLO − Local Oscillator Input Power − dBm
12
60
50
40
POUT = 0 dBm
TA = 25°C
fLO = 1842 MHz
Optimized at 1842 MHz
30
1780
G018
Figure 20.
12
5.4
70
60
0
−12
5.2
Figure 18.
80
10
5.0
VCC − Supply Voltage − V
G043
70
4.8
1800
1820
1840
1860
Figure 21.
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1880
fLO − Frequency − MHz
1900
1920
G045
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SLWS149A – SEPTEMBER 2004 – REVISED AUGUST 2006
TYPICAL CHARACTERISTICS (continued)
SIDEBAND SUPPRESSION
vs
VCM
SIDEBAND SUPPRESSION
vs
SUPPLY VOLTAGE
80
70
Optimization
Point
65
SS − Sideband Suppression − dBc
SS − Sideband Suppression − dBc
70
60
50
40
30
20
10
POUT = 0 dBm
TA = 25°C
fLO = 1842 MHz
Optimized at 3.7 V
0
3.0
55
50
45
40
35
3.5
4.0
Optimization
Point
60
POUT = 0 dBm
TA = 25°C
fLO = 1842 MHz
Optimized at 5 V
30
4.4
4.5
4.6
VCM − V
G050
SIDEBAND SUPPRESSION
vs
LOCAL OSCILLATOR INPUT POWER
CARRIER SUPPRESSION
vs
FREQUENCY
5.4
5.6
G051
80
70
60
50
40
30
20
POUT = 0 dBm
TA = 25°C
fLO = 1842 MHz
Optimized at 0 dBm
−9
−6
−3
65
60
55
50
45
40
35
30
25
0
Optimization
Point
75
Optimization
Point
CS − Carrier Suppression − dBc
SS − Sideband Suppression − dBc
5.2
Figure 23.
70
0
−12
5.0
Figure 22.
80
10
4.8
VCC − Supply Voltage − V
3
6
9
PLO − Local Oscillator Input Power − dBm
12
POUT = 0 dBm
TA = 25°C
fLO = 2.1 GHz
Optimized at 2.1 GHz
20
2040
G049
Figure 24.
2060
2080
2100
2120
2140
fLO − Frequency − MHz
2160
2180
G054
Figure 25.
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TYPICAL CHARACTERISTICS (continued)
CARRIER SUPPRESSION
vs
VCM
CARRIER SUPPRESSION
vs
SUPPLY VOLTAGE
80
90
Optimization
Point
75
CS − Carrier Suppression − dBc
CS − Carrier Suppression − dBc
80
70
60
50
40
30
20
10
POUT = 0 dBm
TA = 25°C
fLO = 2.1 GHz
Optimized at 3.7 V
0
3.0
70
65
60
55
50
45
3.5
4.0
Optimization
Point
POUT = 0 dBm
TA = 25°C
fLO = 2.1 GHz
Optimized at 5 V
40
4.4
4.5
4.6
VCM − V
G056
CARRIER SUPPRESSION
vs
LOCAL OSCILLATOR INPUT POWER
SIDEBAND SUPPRESSION
vs
FREQUENCY
5.6
G057
40
30
20
POUT = 0 dBm
TA = 25°C
fLO = 2.1 GHz
Optimized at 0 dBm
−9
−6
−3
Optimization
Point
85
SS − Sideband Suppression − dBc
CS − Carrier Suppression − dBc
Optimization
Point
80
75
70
65
60
55
50
45
0
3
6
9
PLO − Local Oscillator Input Power − dBm
12
POUT = 0 dBm
TA = 25°C
fLO = 2.1 GHz
Optimized at 1842 MHz
40
2040
G055
Figure 28.
14
5.4
90
50
0
−12
5.2
Figure 27.
60
10
5.0
Figure 26.
80
70
4.8
VCC − Supply Voltage − V
2060
2080
2100
2120
Figure 29.
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2140
fLO − Frequency − MHz
2160
2180
G058
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SLWS149A – SEPTEMBER 2004 – REVISED AUGUST 2006
TYPICAL CHARACTERISTICS (continued)
SIDEBAND SUPPRESSION
vs
VCM
SIDEBAND SUPPRESSION
vs
SUPPLY VOLTAGE
80
90
Optimization
Point
70
SS − Sideband Suppression − dBc
SS − Sideband Suppression − dBc
80
70
60
50
40
30
20
10
POUT = 0 dBm
TA = 25°C
fLO = 2.1 GHz
Optimized at 3.7 V
0
3.0
60
50
30
20
10
3.5
4.0
Optimization
Point
40
POUT = 0 dBm
TA = 25°C
fLO = 2.1 GHz
Optimized at 5 V
0
4.4
4.5
4.6
4.8
5.0
5.2
5.4
VCC − Supply Voltage − V
VCM − V
G060
Figure 30.
Figure 31.
SIDEBAND SUPPRESSION
vs
LOCAL OSCILLATOR INPUT POWER
P1dB
vs
FREQUENCY
5.6
G061
8
80
–40°C
7
60
6
50
5
25°C
P1dB − dBm
SS − Sideband Suppression − dBc
70
Optimization
Point
40
30
0
−12
4
3
2
20
10
85°C
POUT = 0 dBm
TA = 25°C
fLO = 2.1 GHz
Optimized at 0 dBm
−9
−6
−3
1
0
3
6
9
PLO − Local Oscillator Input Power − dBm
12
0
1400
G059
Figure 32.
1600
1800
2000
2200
fLO − Frequency − MHz
2400
2600
G019
Figure 33.
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TYPICAL CHARACTERISTICS (continued)
OUTPUT POWER FLATNESS
vs
VCM (POUT = 0 dBm NOMINAL)
5
5
4
4
POUT − Output Power Flatness− dBm
POUT − Output Power Flatness − dBm
OUTPUT POWER FLATNESS
vs
FREQUENCY (POUT = 0, –10 dBm NOMINAL)
3
2
–40°C
1
0
−1
25°C
−2
85°C
−3
−4
1800
1900
2000
2100
2200
fLO − Frequency − MHz
2
0
−1
−2
85°C
−3
3.5
4.0
4.5
5.0
G022
G027
Figure 34.
Figure 35.
OUTPUT POWER FLATNESS
vs
LO INPUT POWER (POUT = 0 dBm NOMINAL)
OUTPUT POWER FLATNESS
vs
SUPPLY VOLTAGE (POUT = 0 dBm NOMINAL)
5
fLO = 1960 MHz
4
POUT − Output Power − dBm
2
–40°C
25°C
1
0
−1
−2
85°C
2
–40°C
1
0
−1
−4
−4
−6
−3
0
3
6
9
12
−5
4.4
G038
Figure 36.
25°C
85°C
−2
−3
−9
fLO = 1842 MHz
3
−3
PLO − Local Oscillator Input Power − dBm
16
25°C
1
VCM − V
3
−5
−12
–40°C
−5
3.0
2300
5
POUT − Output Power Flatness − dBm
3
−4
−5
1700
4
fLO = 1960 MHz
4.6
4.8
5.0
Figure 37.
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5.2
VCC − Supply Voltage − V
5.4
5.6
G009
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SLWS149A – SEPTEMBER 2004 – REVISED AUGUST 2006
TYPICAL CHARACTERISTICS (continued)
OUTPUT POWER FLATNESS
vs
SUPPLY VOLTAGE (POUT = 0 dBm NOMINAL)
OUTPUT POWER FLATNESS
vs
SUPPLY VOLTAGE (POUT = 0 dBm NOMINAL)
5
4
3
2
POUT − Output Power − dBm
POUT − Output Power − dBm
4
5
fLO = 1960 MHz
–40°C
25°C
1
0
−1
−2
85°C
3
2
−1
−2
−4
−4
4.8
5.0
5.2
5.4
VCC − Supply Voltage − V
4.6
4.8
5.0
5.2
5.4
VCC − Supply Voltage − V
G033
Figure 38.
Figure 39.
IMD3
vs
OUTPUT POWER PER TONE
2ND USB
vs
FREQUENCY
70
5.6
G053
−30
–40°C
POUT = 0 dBm
−35
60
–40°C
85°C
−40
50
2nd USB − dBc
25°C
IMD3 − dBc
85°C
−5
4.4
5.6
25°C
0
−3
4.6
–40°C
1
−3
−5
4.4
fLO = 2.1 GHz
40
85°C
30
−45
25°C
−50
20
−55
10
−60
fLO = 1.8 GHz
0
−15
−10
−5
−65
1750
0
POUT − Output Power Per Tone − dBm
1850
1950
2050
fLO − Frequency − MHz
G016
Figure 40.
2150
2250
G023
Figure 41.
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TYPICAL CHARACTERISTICS (continued)
2ND USB
vs
I, Q AMPLITUDE
2ND USB
vs
I, Q AMPLITUDE
0
−30
fLO = 1960 MHz
−10
25°C
–40°C
−20
−50
2nd USB − dBc
2nd USB − dBc
−40
85°C
−60
−30
85°C
−40
−50
25°C
−60
–40°C
−70
−70
fLO = 1842 MHz
−80
−80
0
1
2
3
4
I, Q Amplitude − VPP
0
1
2
3
I, Q Amplitude − VPP
G004
Figure 42.
Figure 43.
2ND USB
vs
I, Q Amplitude
2ND USB
vs
VCM
−30
4
G005
−30
fLO = 2.1 GHz
−35
–40°C
−40
85°C
2nd USB − dBc
2nd USB − dBc
−40
−50
25°C
85°C
−60
−45
25°C
−50
–40°C
−55
−70
−60
POUT = 0 dBm
fLO = 1960 MHz
−80
0
1
2
I, Q Amplitude − VPP
3
−65
3.0
4
4.0
4.5
VCM − V
G006
Figure 44.
18
3.5
G030
Figure 45.
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TYPICAL CHARACTERISTICS (continued)
2ND USB
vs
SUPPLY VOLTAGE
2ND USB
vs
LOCAL OSCILLATOR INPUT POWER
−30
−35
2nd USB − dBc
–40°C
85°C
−40
−40
2nd USB − dBc
−35
−30
POUT = 0 dBm
fLO = 1960 MHz
−45
25°C
−50
–40°C
−55
25°C
−60
−65
4.6
4.8
5.0
5.2
5.4
POUT = 0 dBm
fLO = 1842 MHz
−65
−12
5.6
VCC − Supply Voltage − V
−9
−6
−3
0
3
6
9
PLO − Local Oscillator Input Power − dBm
G036
Figure 46.
Figure 47.
2ND USB
vs
LOCAL OSCILLATOR INPUT POWER
2ND USB
vs
LOCAL OSCILLATOR INPUT POWER
−30
−30
−35
−35
−40
−40
85°C
2nd USB − dBc
2nd USB − dBc
85°C
−50
−55
−60
−70
4.4
−45
−45
−50
–40°C
G052
–40°C
−45
85°C
−50
25°C
−55
−55
12
25°C
−60
−65
−12
−60
POUT = 0 dBm
fLO = 1960 MHz
−9
−6
−3
0
3
6
9
PLO − Local Oscillator Input Power − dBm
12
POUT = 0 dBm
fLO = 2.1 GHz
−65
−12
−9
−6
−3
0
3
6
9
PLO − Local Oscillator Input Power − dBm
G041
Figure 48.
12
G062
Figure 49.
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TYPICAL CHARACTERISTICS (continued)
3RD LSB
vs
FREQUENCY
3RD LSB
vs
I, Q AMPLITUDE
−40
−20
fLO = 1842 MHz
–40°C
−45
−30
85°C
−40
−55
−60
3rd LSB − dBc
3rd LSB − dBc
−50
25°C
−65
–40°C
−50
25°C
−60
85°C
−70
−70
−80
−75
POUT = 0 dBm
−80
1700
1800
1900
2000
2100
fLO − Frequency − MHz
−90
0.0
2200
0.5
1.0
1.5
2.0
I, Q Amplitude − VPP
G024
Figure 50.
Figure 51.
3RD LSB
vs
I, Q AMPLITUDE
3RD LSB
vs
I, Q AMPLITUDE
−20
2.5
G013
−20
fLO = 1960 MHz
fLO = 2.1 GHz
−30
−30
85°C
–40°C
−50
−60
25°C
−50
−60
–40°C
−70
−70
−80
−80
−90
0.0
0.5
1.0
1.5
I, Q Amplitude − VPP
2.0
2.5
−90
0.0
G014
Figure 52.
20
85°C
−40
3rd LSB − dBc
3rd LSB − dBc
−40
25°C
0.5
1.0
1.5
I, Q Amplitude − VPP
Figure 53.
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2.0
2.5
G015
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SLWS149A – SEPTEMBER 2004 – REVISED AUGUST 2006
TYPICAL CHARACTERISTICS (continued)
3RD LSB
vs
VCM
3RD LSB
vs
SUPPLY VOLTAGE
−40
0
−10
POUT = 0 dBm
fLO = 1960 MHz
−45
−50
3rd LSB − dBc
−20
3rd LSB − dBc
–40°C
−30
–40°C
85°C
−40
−50
−55
85°C
−60
25°C
−65
−70
−60
−75
25°C
−70
3.0
3.5
4.0
POUT = 0 dBm
fLO = 1960 MHz
−80
4.4
4.5
4.6
VCM − V
4.8
5.0
5.2
5.4
VCC − Supply Voltage − V
G031
Figure 54.
Figure 55.
3RD LSB
vs
LOCAL OSCILLATOR INPUT POWER
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
5.6
G037
200
−40
−45
POUT = 0 dBm
fLO = 1960 MHz
–40°C
180
ICC − Supply Current − mA
3rd LSB − dBc
−50
−55
85°C
−60
25°C
−65
−70
160
85°C
25°C
140
–40°C
120
−75
−80
−12
POUT = 0 dBm
fLO = 1960 MHz
−9
−6
−3
0
3
6
9
PLO − Local Oscillator Input Power − dBm
12
100
4.4
G042
Figure 56.
4.6
4.8
5.0
5.2
VCC − Supply Voltage − V
5.4
5.6
G032
Figure 57.
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TYPICAL CHARACTERISTICS (continued)
NOISE AT 6-MHz OFFSET
vs
OUTPUT POWER
NOISE AT 60-MHz OFFSET
vs
OUTPUT POWER
−142
−142
fLO = 2.1 GHz
−144
−144
−146
−146
−148
Noise − dBm/Hz
Noise − dBm/Hz
fLO = 1960 MHz
85°C
−150
−152
85°C
−148
−150
−152
25°C
–40°C
−154
−154
–40°C
−156
−25
−20
−15
−10
−5
0
5
POUT − Output Power − dBm
16
14
25°C
−156
−25
−20
−15
−10
−5
0
5
POUT − Output Power − dBm
G046
G063
Figure 58.
Figure 59.
NOISE DISTRIBUTION AT 6-MHz
OFFSET OVER TEMPERATURE
NOISE DISTRIBUTION AT 6-MHz
OFFSET OVER TEMPERATURE
20
POUT = 0 dBm
fLO = 1842 MHz
POUT = 0 dBm
fLO = 1960 MHz
18
16
12
Percentage
Percentage
14
10
8
6
12
10
8
6
4
4
2
Noise − dBm/Hz
−147.0
−147.2
Noise − dBm/Hz
G064
G065
Figure 60.
22
−147.4
−147.6
−147.8
−148.0
−148.2
−148.4
0
−147.2
−147.6
−147.4
−148.0
−147.8
−148.4
−148.2
−148.8
−148.6
−149.2
−149.0
−149.6
−149.4
−150.0
−149.8
0
2
Figure 61.
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TYPICAL CHARACTERISTICS (continued)
NOISE DISTRIBUTION AT 60-MHz
OFFSET OVER TEMPERATURE
20
18
POUT = 0 dBm
fLO = 2.1 GHz
16
Percentage
14
12
10
8
6
4
−149.4
−149.6
−150.0
−149.8
−150.4
−150.2
−150.8
−150.6
−151.2
−151.0
−151.4
−151.6
0
−151.8
2
Noise − dBm/Hz
G066
Figure 62.
THEORY OF OPERATION
The TRF3702 employs a double-balanced mixer architecture in implementing the direct I, Q upconversion. The I,
Q inputs can be driven single-endedly or differentially, with comparable performance in both cases. The common
mode level (VCM) of the four inputs (IVIN, IREF, QVIN, QREF) is typically set to 3.7 V and needs to be driven
externally. These inputs go through a set of differential amplifiers and through a V-I converter to feed the
double-balanced mixers. The ac-coupled LO input to the device goes through a phase splitter to provide the
in-phase and quadrature signals that in turn drive the mixers. The outputs of the mixers are then summed,
converted to single-ended signals, and amplified before they are fed to the output port RFOUT. The output of
the TRF3702 is ac-coupled and can drive 50-Ω loads.
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EQUIVALENT CIRCUITS
Figure 63 through Figure 66 show equivalent schematics for the main inputs and outputs of the device.
I, Q Baseband
LO
50 Ω
S0001-01
S0002-01
Figure 63. LO Equivalent Input Circuit
Figure 64. IVIN, QVIN, IREF, QREF Equivalent Circuit
50 kΩ
RFOUT
Power Down
S0003-01
Figure 65. RFOUT Equivalent Circuit
24
S0004-01
Figure 66. Power-Down (PWD) Equivalent Circuit
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APPLICATION INFORMATION
DRIVING THE I, Q INPUTS
There are several ways to drive the four baseband inputs of the TRF3702 to the required amplitude and dc
offset. The optimal configuration depends on the end application requirements and the signal levels desired by
the designer.
The TRF3702 is by design a differential part, meaning that ideally the user should provide fully complementary
signals. However, similar performance in every respect can be achieved if the user only has single-ended
signals available. In this case, the IREF and QREF pins just need to have the VCM dc offset applied.
Implementing a Single-to-Differential Conversion for the I, Q inputs
In case differential I, Q signals are desired but not available, the THS4503 family of wideband, low-distortion,
fully differential amplifiers can be used to provide a convenient way of performing this conversion. Even if
differential signals are available, the THS4503 can provide gain in case a higher voltage swing is required.
Besides featuring high bandwidth and high linearity, the THS4503 also provides a convenient way of applying
the VCM to all four inputs to the modulator through the VOCM pin (pin 2). The user can further adjust the dc
levels for optimum carrier suppression by injecting extra dc at the inputs to the operational amplifier, or by
individually adding it to the four outputs. Figure 67 shows a typical implementation of the THS4503 as a driver
for the TRF3702. Gain can be easily incorporated in the loop by adjusting the feedback resistors appropriately.
For more details, see the THS4503 data sheet at www.ti.com.
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APPLICATION INFORMATION (continued)
10 pF
392 Ω
+8 VA
VCM
0.01 µF
0.1 µF
0.01 µF
7
3
+VCC
NC
374 Ω
Single-Ended I Input
8
2
402 Ω
0.1 µF
THS4503
5
22.1 Ω
4
22.1 Ω
IREF
VOUT−
VOCM
VOUT+
1
IREF
+
−
IVIN
IVIN
−VCC
6
−8 VA
0.1 µF
0.01 µF
392 Ω
10 pF
S0005-02
Figure 67. Using the THS4503 to Condition the Baseband Inputs to the TRF3702 (I Channel Shown)
26
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APPLICATION INFORMATION (continued)
DRIVING THE LOCAL OSCILLATOR INPUT
The LO pin is internally terminated to 50 Ω, thus enabling easy interface to the LO source without the need for
external impedance matching. The power level of the LO signal should be in the range of –6 dBm to 6 dBm. For
characterization purposes, a power level of 0 dBm was chosen. An ideal way of driving the LO input of the
TRF3702 is by using the TRF3750, an ultralow-phase-noise integer-N PLL from Texas Instruments. Combining
the TRF3750 with an external VCO can complete the loop and provide a flexible, convenient, and cost-effective
solution for the local oscillator of the transmitter. Figure 68 shows a typical application for the LO driver network
that incorporates the TRF3750 integer-N PLL synthesizer into the design. Depending on the VCO output and the
amount of signal loss, an optional gain stage may be added to the output of the VCO before it is applied to the
TRF3702 LO input.
DVDD
10 pF
+
VVCO
0.1 mF
0.1 mF
10 pF
+
10 pF
CE
100 pF
15
7
AVDD
10
SUPPLY
+
10 mF
0.1 mF
0.1 mF
10 mF
To TRF3702
LO Input
+
10 mF
10 pF
DVDD
10 mF
VCP
AVDD
VCP
16
16.5 W
1 nF
GND
TCXO
(10-MHz Reference)
8
REFIN
CPOUT
20 kW
2
1 nF
TRF3750
DECOUPLING NOT SHOWN
RSET
10 nF
V TUNE
82 pF
GND
1
OUT
VCO
16.5 W
100 pF
GND
16.5 W
3.9 kW
RSET
4.7 kW
12
LE
13
RFINA
DATA
LE
MUXOUT
DGND
DATA
CLK
CPGND
11
AGND
CLK
3 4 9
RFINB
6
14 LOCK DETECT
100 pF
49.9 W
5
100 pF
S0009-02
Figure 68. Typical Application Circuit for Generating the LO Signal for the TRF3702 Modulator
PCB LAYOUT CONSIDERATIONS
The TRF3702 is a high-performance RF device; hence, care should be taken in the layout of the PCB in order to
ensure optimum performance. Proper decoupling with low-ESR ceramic chip capacitors is needed for the VCC
supplies (pins 6 and 10). Typical values used are in the order of 1 pF parallel to 0.1 µF, with the lower-valued
capacitors placed closer to the device pins. In addition, a larger tank capacitor in the order of 10 µF should be
placed on the supply line as layout permits. At least a 4-layer board is recommended for the PCB. If possible, a
solid ground plane and a ground pour is also recommended, as is a power plane for the supplies. Because the
balance of the four I, Q inputs to the modulator can be critical to device performance, care should be taken to
ensure that the trace runs for all four inputs are equal in length. In the case of single-ended drive of the I, Q
inputs, the two unused pins IREF and QREF are fed with the VCM dc voltage only, and should be decoupled
with a 0.1-µF capacitor (or smaller). The LO input trace should be minimized in length and have controlled
impedance of 50 Ω. No external matching components are needed because there is an internal 50-Ω
termination. The RFOUT pin should also have a relatively small trace to minimize parasitics and coupling, and
should also be controlled to 50 Ω. An impedance-matching network can be used to optimize power transfer, but
is not critical. All the results shown in the data sheet were taken with no impedance matching network used
(RFOUT directly driving an external 50-Ω load).
The exposed thermal and ground pad on the bottom of the TRF3702 should be soldered to ground to ensure
optimum electrical and thermal performance. The landing pattern on the PCB should include a solid pad and 4
thermal vias. These vias typically have 1,2-mm pitch and 0,3-mm diameter. The vias can be arranged in a 2×2
array. The thermal pad on the PCB should be at least 1,65×1,65 mm. A suggested layout is shown in Figure 69.
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27
TRF3702
www.ti.com
SLWS149A – SEPTEMBER 2004 – REVISED AUGUST 2006
APPLICATION INFORMATION (continued)
0.8 mm
Via 0.3 mm Drill
(4 Places)
Power Pad
1.65 mm x 1.65 mm
1.2 mm
3.5 mm
1 mm x 0.432 mm
(16 Places)
3.2 mm
M0002-01
Figure 69. Board Layout for the TRF3702 Device
IMPLEMENTING A DIRECT UPCONVERSION TRANSMITTER USING A TI DAC
The TRF3702 is ideal for implementing a direct upconversion transmitter, where the input I, Q data can originate
from an ASIC or a DAC. Texas Instruments' line of digital-to-analog converters (DAC) is ideally suited for
interfacing to the TRF3702. Such DACs include, among others, the DAC290x series, DAC5672, and DAC5686.
This section illustrates the use of the DAC5686, which offers a unique set of features that make interfacing to
the TRF3702 easy and convenient. The DAC5686 is a 16-bit, 500 MSPS, 2×–16× interpolating dual-channel
DAC, and it features I, Q adjustments for optimal interface to the TRF3702. User-selectable, 11-bit offset and
12-bit gain adjustments can optimize the carrier and sideband suppression of the modulator, resulting in
enhanced performance and relaxed filtering requirements at RF. The preferred mode of operation of the
DAC5686 for direct interface with the TRF3702 at baseband is the dual-DAC mode. The user also has the
flexibility of selecting any one of the four possible complex spectral bands to be fed into the TRF3702. For
details on the available modes and programming, see the DAC5686 data sheet available at www.ti.com.
Figure 70 shows the DAC5686 in dual-DAC mode, which is best-suited for zero-IF interface to the TRF3702. In
this mode, a seamless, passive interface between the DAC output and the input to the modulator is used, so
that no extra components are needed between the two devices. The optimum dc offset level for the inputs to the
TRF3702 (VCM) is approximately 3.7 V. The output of the DAC should be centered around 3.3 V or less
(depending on signal swing), in order to ensure that its output compliance limits are not exceeded. The resistive
network shown in Figure 70 allows for this dc offset transition while still providing a dc path between the DAC
output and the modulator. This ensures that the dc offset adjustments on the DAC5686 can still be applied to
optimize the carrier suppression at the modulator output. The combination of the DAC5686 and the TRF3702
provides a unique signal-chain solution with state-of-the-art performance for wireless infrastructure applications.
28
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TRF3702
www.ti.com
SLWS149A – SEPTEMBER 2004 – REVISED AUGUST 2006
APPLICATION INFORMATION (continued)
GND
+5 V
VCC
221W
221W
49.9W
49.9W
Fdata
A
Offset
IOUTA1
IVIN
IREF
15W
DEMUX
16-Bit
DAC
IOUTA2
DA[15:0]
15W
A Gain
+45°
LO
B Gain
16-Bit
DAC
B
Offset
RFOUT
IOUTB1
QVIN
15W
IOUTB2
QREF
49.9W
DAC5686
Σ
50 Ω
15W
DB[15:0]
–45°
221W
221W
49.9W
TRF3701
PWD
GND
GND
+5 V
S0010-01
Figure 70. DAC5686 in Dual-DAC Mode With Quadrature Modulator
GSM Applications
The TRF3702 is ideally suited for GSM applications, because it combines high linearity with low noise levels.
Figure 60 and Figure 61 show the distribution of noise vs output power for the TRF3702 over the entire
recommended temperature range. The level of noise attained in combination with the superior IMD3
performance shown in Figure 40 means that the user can reach superior levels of C/N while maintaining high
linearity. This combination offers the capability of delivering low levels of EVM, meeting the stringent
requirements imposed by the GSM/EDGE standards. Figure 71 shows the spectral mask compliance for the
device versus channel power, for both 400-kHz and 600-kHz offsets.
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TRF3702
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SLWS149A – SEPTEMBER 2004 – REVISED AUGUST 2006
APPLICATION INFORMATION (continued)
GMSK SPECTRAL PERFORMANCE
vs
CHANNEL POWER
GMSK Spectral Performance − dBc in 30 kHz
90
600-kHz Offset
80
70
400-kHz Offset
60
50
40
30
20
10
fLO = 2 GHz
0
−14
−12
−10
−8
−6
−4
−2
0
Channel Power − dBm
G047
Figure 71.
WCDMA Applications
The TRF3702 is also optimized for WCDMA applications, where both adjacent-channel power ratio (ACPR) and
noise density are critically important. Figure 62 shows the noise performance of the modulator at a 60-MHz
offset over temperature. In addition, Figure 72 shows the 60-MHz offset noise measured at the output of the
TRF3702 versus WCDMA channel power. Using Texas Instruments' DAC568x series of high-performance
digital-to-analog converters in the configuration depicted in Figure 70, state-of-the-art levels of ACPR have been
measured. In each case, test model 1 was used with 64 active channels as the baseband input to the TRF3702.
Figure 73 shows the performance attained for a single WCDMA carrier at 2.14 GHz, with a measured ACPR of
71.2 dBc for a channel power of –14 dBm. This unprecedented level of ACPR along with the low levels of noise
at 60-MHz offset makes the TRF3702 an optimum choice for such applications. Figure 74 shows the
single-carrier WCDMA ACPR performance versus channel power; it is important to note that even at high output
power levels, the TRF3702 maintains great linearity, offering 64 dBc of ACPR at an output-channel power of –8
dBm.
30
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TRF3702
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SLWS149A – SEPTEMBER 2004 – REVISED AUGUST 2006
APPLICATION INFORMATION (continued)
NOISE AT 60-MHz OFFSET
vs
WCDMA CHANNEL POWER
SINGLE-CARRIER WCDMA PERFORMANCE
−152.0
0
−152.2
−20
fLO = 2140 MHz
Channel Power = −14 dBm
ACPR = 71.2 dBc
−40
Power − dBm
−152.6
−152.8
−153.0
−60
−80
−153.2
−100
−153.4
−153.6
−20
−15
−10
−5
−120
2125
0
2130
Channel Power − dBm
2135
2140
2145
2150
2155
f − Frequency − MHz
G068
G067
Figure 72.
Figure 73.
SINGLE-CARRIER WCDMA ACPR
vs
CHANNEL POWER
72
71
70
69
ACPR − dBc
Noise − dBm/Hz
−152.4
68
67
66
65
64
63
−25
−20
−15
−10
−5
0
Channel Power − dBm
G068
Figure 74.
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TRF3702
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SLWS149A – SEPTEMBER 2004 – REVISED AUGUST 2006
APPLICATION INFORMATION (continued)
The TRF3702 can also be used for multicarrier applications, as is illustrated in Figure 75. For a 4-carrier case at
a total output power of –16.7 dBm, an ACPR of almost 63 dBc can be reached. Figure 76 shows the ACPR
profile for a 4-carrier WCDMA application versus per-carrier channel power. Further improvements in
performance can be achieved by including a low-pass filter between the output of the DAC and the input to the
TRF3702, based on the frequency planning and specific requirements of a given design. The combination of the
TRF3702, the DAC568x, and the TRF3750 provides a unique signal-chain chipset capable of delivering
state-of-the-art levels of performance for the most challenging WCDMA applications.
FOUR-CARRIER WCDMA ACPR
vs
CHANNEL POWER (PER CARRIER)
FOUR-CARRIER WCDMA ACPR PERFORMANCE
64
0
−20
fLO = 2140 MHz
Total Carrier Power = −16.7 dBm
ACPR = 62.8 dBc
ALT ACPR = 63.7 dBc
63
62
ACPR − dBc
Power − dBm
−40
−60
61
60
−80
59
−100
−120
2110
58
2120
2130
2140
2150
2160
2170
57
−30
−25
−20
−10
G070
G069
Figure 75.
32
−15
Channel Power (Per Carrier) − dBm
f − Frequency − MHz
Figure 76.
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PACKAGE OPTION ADDENDUM
www.ti.com
5-Feb-2007
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TRF3702IRHC
ACTIVE
QFN
RHC
16
92
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TRF3702IRHCG4
ACTIVE
QFN
RHC
16
92
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TRF3702IRHCR
ACTIVE
QFN
RHC
16
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TRF3702IRHCRG4
ACTIVE
QFN
RHC
16
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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Addendum-Page 1
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