UMT4401 / SST4401 / MMST4401 / 2N4401 Transistors NPN Medium Power Transistor (Switching) UMT4401 / SST4401 / MMST4401 / 2N4401 !External dimensions (Units : mm) UMT4401 2.0±0.2 0.65 0.65 SST4401 MMST4401 2N4401 Packaging type UMT3 R2X T106 SST3 R2X T116 SMT3 R2X T146 TO-92 T93 3000 MMST4401 V V V A Tstg 2N4401 W 0.625 150 All terminals have the same +0.1 dimensions 4.8±0.2 ˚C -55~+150 0.15 −0.06 0.4 +0.1 −0.05 (1) Emitter (2) Base (3) Collector 3.7±0.2 2.5Min. Tj Storage temperature 0~0.1 (3) ROHM : SMT3 EIAJ : SC-59 0.2 PC Junction temperature 1.6+0.2 −0.1 Unit 60 40 6 0.6 2N4401 0.8±0.1 (2) (1) 4.8±0.2 UMT4401 SST4401 MMST4401 1.1+0.2 −0.1 (12.7Min.) Collector power dissipation Limits VCBO VCEO VEBO IC 2.1±0.1 2.9±0.2 1.9±0.2 0.95 0.95 Symbol (1) Emitter (2) Base (3) Collector 0.15 −0.06 0.4 +0.1 −0.05 !Absolute maximum ratings (Ta=25°C) Parameter 0.2Min. All terminals have the same dimensions +0.1 ROHM : SST3 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 0~0.1 (3) 0.3~0.6 3000 0.45±0.1 (2) (1) 2.8±0.2 3000 (1) Emitter (2) Base (3) Collector 0.95 +0.2 −0.1 0.95 0.95 1.3+0.2 −0.1 SST4401 2.4±0.2 UMT4401 3000 2.9±0.2 1.9±0.2 Part No. Code Basic ordering unit (pieces) 0~0.1 0.3+0.1 0.15±0.05 −0 All terminals have the same dimensions ROHM : UMT3 EIAJ : SC-70 !Package, marking, and packaging specifications 0.7±0.1 0.2 (2) 1.25±0.1 (1) (3) Marking 0.9±0.1 1.3±0.1 0.1~0.4 !Features 1) BVCEO>40V (IC=1mA) 2) Complements the UMT4403 / SST4403 / MMST4403 / PN4403. ˚C 0.5±0.1. ROHM : TO-92 EIAJ : SC-43 (1) (2) (3) +0.3 2.5 − 0.1 5 0.45±0.1 !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Parameter BVCBO BVCEO 60 40 - - V V IC=100µA IC=1mA Emitter-base breakdown voltage 0.1 0.1 V µA IE=100µA µA VEB=5V BVEBO 6 - Collector cutoff current ICBO - Emitter cutoff current IEBO - - 0.4 - - 0.75 - - 0.95 - - 1.2 20 40 - - Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio VCE(sat) VBE(sat) hFE V V VCB=35V IC/IB=150mA/15mA IC/IB=500mA/50mA IC/IB=150mA/15mA IC/IB=500mA/50mA VCE=1V, IC=0.1mA VCE=1V, IC=1mA 80 - - 100 - 300 - 40 250 - - 6.5 MHz pF pF VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA VCE=10V, IE=-20mA, f=100MHz VCB=10V, f=100kHz VEB=0.5V, f=100kHz Transition frequency Collector output capacitance Cob Emitter input capacitance Cib - - 30 td - - 15 ns VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA tr tstg - - 20 225 ns ns VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA VCC=30V, IC=150mA, IB1=-IB2=15mA tf - - 30 ns VCC=30V, IC=150mA, IB1=-IB2=15mA Delay time Rise time Storage time Fall time fT - Conditions 2.3 (1) Emitter (2) Base (3) Collector UMT4401 / SST4401 / MMST4401 / 2N4401 Transistors !Electrical characteristic curves 100 COLLECTOR CURRENT : Ic(mA) Ta=25°C 1000 600 DC CURRENT GAIN : hFE 500 400 50 Ta=25°C VCE=10V 100 300 200 1V 100 IB=0µA 10 0.1 0 0 10 5 COLLECTOR-EMITTER VOLTAGE : VCE(V) COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat)(V) 10 COLLECTOR CURRENT : Ic(mA) 100 1000 Fig.3 DC current gain vs. collector current(Ι) Fig.1 Grounded emitter output characteristics Ta=25°C IC / IB=10 1.0 1000 VCE=10V DC CURRENT GAIN : hFE 0.3 0.1 0 1.0 25°C 100 10 100 1000 COLLECTOR CURRENT : Ic(mA) −55°C 10 0.1 1.0 1000 AC CURRENT GAIN : hFE Ta=25°C VCE=10V f=1kHz 100 1.0 10 COLLECTOR CURRENT : Ic(mA) 100 1000 Fig.4 DC current gain vs. collector current(ΙΙ) Fig.2 Collector-emitter saturation voltage vs. collector current 10 0.1 10 COLLECTOR CURRENT : Ic(mA) 100 Fig.5 AC current gain vs. collector current 1000 BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V) 0.2 Ta=125°C 1.8 1.6 Ta=25°C IC / IB=10 1.2 0.8 0.4 0 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.6 Base-emitter saturation voltage vs. collector current UMT4401 / SST4401 / MMST4401 / 2N4401 1.6 1000 1.2 0.4 500 Ta=25°C VCC=30V IC / IB=10 100 100 0.8 VCC=30V 10V 10 1 10 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.7 Grounded emitter propagation characteristics 1000 Fig.8 Turn-on time vs. collector current 1000 Ta=25°C VCC=30V IC=10IB1=10IB2 FALL TIME : tf(ns) STORAGE TIME : ts(ns) Ta=25°C VCC=30V IC=10IB1=10IB2 100 100 10 1.0 10 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) 100MHz 250MHz 300MHz 200MHz 10 1000 CURRENT GAIN-BANDWIDTH PRODUCT(MHz) Ta=25°C 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.11 Fall time vs. collector current Fig.10 Storage time vs. collector current 100 Ta=25°C VCE=10V 100 1 250MHz 0.1 1 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.13 Gain bandwidth product 5 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) 10 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.14 Gain bandwidth product vs. collector current 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.9 Rise time vs. collector current 100 CAPACITANCE(pF) 0 COLLECTOR-EMITTER VOLTAGE : VCE(V) Ta=25°C IC / IB=10 RISE TIME : tr(ns) Ta=25°C VCE=10V 1.8 TURN ON TIME : ton(ns) BASE EMITTER VOLTAGE : VBE(ON)(V) Transistors Ta=25°C f=1MHz Cib Cob 10 1 0.1 1.0 10 REVERSE BIAS VOLTAGE(V) 100 Fig.12 Input / output capacitance vs. voltage