Alternate Source/ Second Source Photodiodes VTD205 (SFH205 INDUSTRY EQUIVALENT) PACKAGE DIMENSIONS inch (mm) CASE 60 TO-92 TYPE (ROUND LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Large area planar silicon photodiode in a cast epoxy sidelooker, similar in outline to the TO-92 package. The package material filters out all visible light but passes infrared. These diodes exhibit low dark current under reverse bias and fast speed of response. Storage Temperature: Operating Temperature: -40°C to 100°C -40°C to 100°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C VTD205 SYMBOL CHARACTERISTIC TEST CONDITIONS UNITS Min. Typ. Max. Short Circuit Current 940 nm, H = 0.5 mW/cm2 ISC Temperature Coefficient 2856 K Open Circuit Voltage 940 nm, H = 0.5 mW/cm2 VOC Temperature Coefficient 2856 K ID Dark Current H = 0, VR = 10 V 2 CJ Junction Capacitance H = 0, VR = 0 v, 1 MHz 72 pF ISC TC ISC VOC TC VOC 15 250 25 µA .20 %/°C 350 mV -2.6 mV/°C 30 nA tR/tF Rise/Fall Time @ RL = 50Ω VR = 5 V, 850 nm 20 nsec SR Sensitivity @ Peak 0.6 A/W λrange Spectral Application Range λp Spectral Response - Peak VBR Breakdown Voltage θ1/2 Angular Resp.-50% Resp. Pt. 800 20 PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA 1100 nm 925 nm 50 V ±60 Degrees Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 75