Alternate Source/ Second Source Photodiodes VTD34F (BPW34F INDUSTRY EQUIVALENT) PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic package. The package material filters out visible light but passes infrared. Suitable for direct mounting to P.C.B. Arrays can be formed by positioning these devices side by side. The photodiodes are designed to provide excellent sensitivity at low levels of irradiance. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -20°C to 80°C -20°C to 80°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C VTD34F SYMBOL CHARACTERISTIC TEST CONDITIONS UNITS Min. Re Responsivity 0.5 mW/cm2, 940 nm 15 VOC Open Circuit Voltage 0.5 mW/cm2, 940 nm 275 Typ. Max. µA 350 mV VOC Temperature Coefficient 2850 K ID Dark Current H = 0, VR = 10 V 2 CJ Junction Capacitance @ 1 MHz, VR = 0 V 60 pF tR/tF Rise/Fall Time @ 1 kΩ Lead VR = 10 V, 833 nm 50 nsec SR Sensitivity @ Peak TC VOC λrange Spectral Application Range λp Spectral Response - Peak VBR Breakdown Voltage θ1/2 Angular Resp.-50% Resp. Pt. NEP D* -2.0 mV/°C 30 0.60 725 nA A/W 1150 nm 940 nm ±50 Degrees Noise Equivalent Power 4.8 x 10-14 W ⁄ Hz Specific Detectivity 5.7 x 1012 cm Hz / W 40 PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA V Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 74