STP5NK100Z - STF5NK100Z STW5NK100Z N-channel 1000V - 2.7Ω - 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESH™ Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID STF5NK100Z 1000 V < 3.7 Ω 3.5 A STP5NK100Z 1000 V < 3.7 Ω 3.5 A STW5NK100Z 1000 V < 3.7 Ω 3.5 A 3 ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatibility 1 TO-220 2 TO-220FP TO-247 Internal schematic diagram Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Applications ■ Switching application Order codes Part number Marking Package Packaging STF5NK100Z F5NK100Z TO-220FP Tube STP5NK100Z P5NK100Z TO-220 Tube STW5NK100Z W5NK100Z TO-247 Tube August 2006 Rev 4 1/16 www.st.com 16 Contents STP5NK100Z - STF5NK100Z - STW5NK100Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 2 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 STP5NK100Z - STF5NK100Z - STW5NK100Z 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value TO-220/TO-247 Unit TO-220FP VDS Drain-source voltage (VGS = 0) 1000 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 3.5 3.5 (1) A ID Drain current (continuous) at TC=100°C 2.2 2.2 (1) A IDM(2) Drain current (pulsed) 14 14 (1) A PTOT Total dissipation at TC = 25°C 125 30 W 1 0.24 W/°C Derating factor VESD(G-S) dv/dt (3) VISO TJ Tstg Gate source ESD (HBM-C=100pF, R=1.5ΚΩ) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s; Tc= 25°C) 4000 V 4.5 V/ns - Operating junction temperature Storage temperature 2500 V -55 to 150 °C Value Unit 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤3.5A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. Table 2. Symbol Thermal data Parameter TO-220 TO-220FP TO-247 Rthj-case Thermal resistance junction-case max 1 4.2 °C/W Rthj-a Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C 3/16 Electrical ratings Table 3. STP5NK100Z - STF5NK100Z - STW5NK100Z Avalanche characteristics Symbol Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 3.5 A EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) 250 mJ Table 4. 1.1 Parameter Gate-source zener diode Symbol Parameter Test conditions Min. BVGSO Gate-source breakdown voltage Igs=± 1mA (open drain) 30 Typ. Max. Unit V Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 4/16 STP5NK100Z - STF5NK100Z - STW5NK100Z 2 Electrical characteristics Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 1mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating, Tc = 125°C IGSS Gate body leakage current VGS = ± 20V (VGS = 0) V(BR)DSS VGS(th) Gate threshold voltage VDS = VGS, ID = 100µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 1.75 A Table 6. Symbol Min. Typ. Max. Unit 1000 3 V 1 50 µA µA ±10 µA 3.75 4.5 V 2.7 3.7 Ω Typ. Max. Unit Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS =15V, ID = 1.75A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Min. 4 S VDS =25V, f=1 MHz, VGS=0 1154 106 21.3 pF pF pF Equivalent output capacitance VGS=0, VDS =0V to 800V 46.8 pF td(on) tr td(off) tf Turn-on delay time Rise time Off-voltage rise time Fall time VDD=500 V, ID= 1.75 A, RG=4.7Ω, VGS=10V (see Figure 20) 22.5 7.7 51.5 19 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=800V, ID = 3.5 A VGS =10V (see Figure 21) 42 7.3 21.7 Cosseq(2). 59 nC nC nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 5/16 Electrical characteristics Table 7. Symbol ISD Source drain diode Parameter Min Typ. Max Unit Source-drain current 3.5 A Source-drain current (pulsed) 14 A (2) Forward on voltage ISD= 3.5 A, VGS=0 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 3.5 A, di/dt = 100A/µs, VDD=30 V (see Figure 22) 605 3.09 10.5 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 3.5 A, di/dt = 100A/µs, VDD=35 V, Tj=150°C (see Figure 22) 742 4.2 11.2 ns µC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 6/16 Test conditions (1) ISDM VSD STP5NK100Z - STF5NK100Z - STW5NK100Z STP5NK100Z - STF5NK100Z - STW5NK100Z Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220FP Figure 2. Thermal impedance for TO-220FP Figure 3. Safe operating area for TO-220 Figure 4. Thermal impedance for TO-220 Figure 5. Safe operating area for TO-247 Figure 6. Thermal impedance for TO-247 7/16 Electrical characteristics STP5NK100Z - STF5NK100Z - STW5NK100Z Figure 7. Output characterisics Figure 8. Transfer characteristics Figure 9. Transconductance Figure 10. Static drain-source on resistance Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations 8/16 STP5NK100Z - STF5NK100Z - STW5NK100Z Electrical characteristics Figure 13. Normalized gate threshold voltage vs temperature Figure 14. Normalized on resistance vs temperature Figure 15. Source-drain diode forward characteristics Figure 16. Normalized BVdss vs temperature Figure 17. Maximum avalanche energy vs temperature 9/16 Test circuit 3 STP5NK100Z - STF5NK100Z - STW5NK100Z Test circuit Figure 18. Unclamped Inductive load test circuit Figure 19. Unclamped Inductive waveform Figure 20. Switching times test circuit for resistive load Figure 21. Gate charge test circuit Figure 22. Test circuit for inductive load switching and diode recovery times 10/16 STP5NK100Z - STF5NK100Z - STW5NK100Z 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/16 Package mechanical data STP5NK100Z - STF5NK100Z - STW5NK100Z TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 12/16 L5 1 2 3 L4 STP5NK100Z - STF5NK100Z - STW5NK100Z Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 13/16 Package mechanical data STP5NK100Z - STF5NK100Z - STW5NK100Z TO-247 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 0.620 0.214 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 14/16 TYP 5.50 0.216 STP5NK100Z - STF5NK100Z - STW5NK100Z 5 Revision history Revision history Table 8. Revision history Date Revision Changes 12-Oct-2004 1 First release 08-Sep-2005 2 Complete datasheet 16-Dec-2005 3 Inserted ecopack indication 16-Aug-2006 4 New template, no content change 15/16 STP5NK100Z - STF5NK100Z - STW5NK100Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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