WMF2M8-XXX5 HI-RELIABILITY PRODUCT 2Mx8 MONOLITHIC FLASH, SMD 5962-97609 PRELIMINARY* FEATURES ■ 5 Volt Read and Write. 5V ± 10% Supply. ■ Low Power CMOS ■ Data Polling and Toggle Bit feature for detection of program or erase cycle completion. ■ Access Times of 90, 120, 150ns ■ Packaging: • 56 lead, Hermetic Ceramic, 0.520" CSOP (Package 207). Fits standard 56 SSOP footprint. • 44 pin Ceramic LCC** • 44 pin Ceramic SOJ (Package 102)** • 44 lead Ceramic Flatpack (Package 225)** ■ Sector Architecture • 32 equal size sectors of 64KBytes each • Any combination of sectors can be erased. Also supports full chip erase. ■ 100,000 Write/Erase Cycles Minimum ■ Organized as 2Mx8 ■ Commercial, Industrial, and Military Temperature Ranges * This data sheet describes a product under development, not fully characterized, and is subject to change without notice. * * Package to be developed. Note: For programming information refer to Flash Programming 16M5 Application Note. PIN CONFIGURATION FOR WMF2M8-XXX5 44 CSOJ** 44 FLATPACK** A17 A18 OE I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 VCC NC NC NC NC NC NC NC NC A19 A20 A15 A14 A13 A12 CS VCC RESET A11 A10 6 5 4 3 2 1 44 43 42 41 40 A7 A6 A5 A4 NC NC NC A3 A2 A1 A0 7 8 9 10 11 12 13 14 15 16 17 39 38 37 36 35 34 33 32 31 30 29 A16 A17 A18 A19 NC NC NC A20 WE OE RY/BY I/O7 I/O6 I/O5 I/O4 VCC 18 19 20 21 22 23 24 25 26 27 28 GND 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 A9 TOP VIEW A16 A15 A14 A13 A12 A11 A10 A9 A8 RESET CS GND NC WE A7 A6 A5 A4 A3 A2 A1 A0 I/O3 NC RESET A11 A10 A9 A1 A2 A3 A4 A5 A6 A7 GND A8 VCC NC I/O1 NC I/O0 A0 NC NC NC I/O2 NC I/O3 NC GND A8 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 I/O1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 44 CLCC** TOP VIEW I/O2 56 CSOP TOP VIEW CS A12 A13 A14 A15 NC NC NC A20 A19 A18 A17 A16 VCC GND I/O6 NC I/O7 NC RY/BY OE WE NC NC I/O5 NC I/O4 VCC ■ RESET pin resets internal state machine to the read mode. ■ Multiple Ground Pins for Low Noise Operation I/O0 FIG. 1 ■ Supports reading or programming data to a sector not being erased. PIN DESCRIPTION December 1999 Rev. 4 I/O0-7 Data Inputs/Outputs A0-20 WE CS OE VCC GND RY/BY RESET Address Inputs Write Enable Chip Select Output Enable Power Supply Ground Ready/Busy Reset 1 ** Package to be developed. White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WMF2M8-XXX5 CAPACITANCE (TA = +25°C) ABSOLUTE MAXIMUM RATINGS Parameter Voltage on Any Pin Relative to VSS Power Dissipation Storage Temperature Short Circuit Output Current Endurance - Write/Erase Cycles (Mil Temp) Data Retention (Mil Temp) Symbol Ratings Unit VT PT Tstg I OS -2.0 to +7.0 8 -65 to +125 100 100,000 min V W °C mA cycles 20 years Parameter Symbol Conditions Address Input capacitance CAD VI/O = 0 V, f = 1.0 MHz Max Unit 12 pF Output Enable capacitance COE VIN = 0 V, f = 1.0 MHz 12 pF Write Enable capacitance CWE VIN = 0 V, f = 1.0 MHz 12 pF Chip Select capacitance CCS VIN = 0 V, f = 1.0 MHz 12 pF Data I/O capacitance CI/O VI/O = 0 V, f = 1.0 MHz 12 pF This parameter is guaranteed by design but not tested. RECOMMENDED DC OPERATING CONDITIONS Parameter Symbol Min Typ Max Unit Supply Voltage V CC 4.5 5.0 5.5 V Ground V SS 0 0 0 V Input High Voltage V IH 2.0 - V CC + 0.5 V Input Low Voltage V IL -0.5 - +0.8 V Operating Temperature (Mil.) TA -55 - +125 °C Operating Temperature (Ind.) TA -40 - +85 °C DC CHARACTERISTICS - CMOS COMPATIBLE (VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C) Parameter Input Leakage Current Symbol Conditions Min Max Unit µA I LI V CC = 5.5, V IN = GND to VCC 10 Output Leakage Current I LO V CC = 5.5, V IN = GND to VCC 10 µA VCC Active Current for Read (1) ICC1 CS = V IL, OE = VIH, f = 5MHz 40 mA V CC Active Current for Program or Erase (2) I CC2 CS = VIL , OE = VIH 60 mA V CC Standby Current I CC3 V CC = 5.5, CS = V IH , f = 5MHz, RESET = Vcc ± 0.3V 2.0 mA Output Low Voltage V OL I OL = 12.0 mA, V CC = 4.5 0.45 V Output High Voltage V OH I OH = -2.5 mA, V CC = 4.5 Low V CC Lock-Out Voltage V LKO 4.2 V 0.85xV CC 3.2 V NOTES: 1. The Icc current listed includes both the DC operating current and the frequency dependent component (@ 5MHz). The frequency component typically is less than 2mA/MHz, with OE at VIH. 2. Icc active while Embedded Algorithm (program or erase) is in progress. 3. DC test conditions VIL = 0.3V, VIH = V CC - 0.3V White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 2 WMF2M8-XXX5 AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS - WE CONTROLLED (VCC = 5.0V, T A = -55°C to +125°C) Parameter Symbol -90 Min tWC -120 Max 90 Min -150 Max 120 Min Unit Max Write Cycle Time tAVAV 150 ns Chip Select Setup Time tELWL tCS 0 0 0 ns Write Enable Pulse Width tWLWH tWP 45 50 50 ns Address Setup Time tAVWL tAS 0 0 0 ns Data Setup Time tDVWH tDS 45 50 50 ns Data Hold Time tWHDX tDH 0 0 0 ns ns Address Hold Time tWLAX tAH 45 50 50 Write Enable Pulse Width High tWHWL tWPH 20 20 20 Duration of Byte Programming Operation (1) tWHWH1 300 300 300 µs Sector Erase (2) tWHWH2 15 15 15 sec Read Recovery Time before Write tGHWL 0 V CC Setup Time t VCS 50 0 µs 50 44 Chip Erase Time (3) µs 0 50 Chip Programming Time ns 44 256 256 44 sec 256 sec Output Enable Hold Time (4) tOEH 10 10 10 ns RESET Pulse Width tRP 500 500 500 ns NOTES: 1. Typical value for t WHWH1 is 7µs. 2. Typical value for t WHWH2 is 1sec. 3. Typical value for Chip Erase Time is 32sec. 4. For Toggle and Data Polling. AC CHARACTERISTICS – READ-ONLY OPERATIONS (VCC = 5.0V, T A = -55°C to +125°C) Parameter Symbol -90 Min -120 Max 90 Min -150 Max 120 Min Unit Max Read Cycle Time t AVAV t RC Address Access Time t AVQV t ACC 90 120 150 150 ns Chip Select Access Time t ELQV t CE 90 120 150 ns Output Enable to Output Valid t GLQV t OE 40 50 55 ns ns Chip Select High to Output High Z (1) t EHQZ t DF 20 30 35 ns Output Enable High to Output High Z (1) t GHQZ t DF 20 30 35 ns Output Hold from Addresses, CS or OE Change, whichever is First t AXQX t OH RESET Low to Read Mode (1) 0 t Ready 0 20 0 20 ns 20 µs 1. Guaranteed by design, not tested. 3 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WMF2M8-XXX5 AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,CS CONTROLLED (VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C) Parameter Symbol -90 Min -120 Max Min -150 Max Min Unit Max Write Cycle Time t AVAV t WC 90 120 150 Write Enable Setup Time t WLEL t WS 0 0 0 ns Chip Select Pulse Width t ELEH t CP 45 50 50 ns Address Setup Time t AVEL t AS 0 0 0 ns Data Setup Time t DVEH t DS 45 50 50 ns Data Hold Time t EHDX t DH 0 0 0 ns Address Hold Time t ELAX t AH 45 50 50 ns t EHEL t CPH 20 Chip Select Pulse Width High 20 ns 20 ns Duration of Byte Programming Operation (1) t WHWH1 300 300 300 µs Sector Erase Time (2) t WHWH2 15 15 15 sec 44 sec 256 sec Read Recovery Time t GHEL 0 0 Chip Programming Time 44 Chip Erase Time (3) 256 Output Enable Hold Time (4) tOEH 10 µs 0 44 256 10 10 ns NOTES: 1. Typical value for t WHWH1 is 7µs. 2. Typical value for t WHWH2 is 1sec. 3. Typical value for Chip Erase Time is 32sec. 4. For Toggle and Data Polling. FIG. 2 AC TEST CONDITIONS AC TEST CIRCUIT Parameter I OL Current Source VZ D.U.T. ≈ 1.5V (Bipolar Supply) C eff = 50 pf CS I OH The Current Source Typ VIL = 0, VIH = 3.0 V Input Rise and Fall 5 ns Input and Output Reference Level 1.5 V Output Timing Reference Level 1.5 V NOTES: V Z is programmable from -2V to +7V. IOL & I OH programmable from 0 to 16mA. Tester Impedance Z0 = 75 Ω. V Z is typically the midpoint of VOH and V OL. IOL & I OH are adjusted to simulate a typical resistive load circuit. rising edge of the last WE signal ATE tester includes jig capacitance. WE Entire programming or erase operations FIG. 3 RY/BY RESET TIMING DIAGRAM tBUSY RESET tRP tReady White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 4 Unit Input Pulse Levels WMF2M8-XXX5 FIG. 4 5 Outputs WE OE CS High Z tACC tCE tOE Addresses Stable Addresses tRC Output Valid tOH tDF High Z AC WAVEFORMS FOR READ OPERATIONS White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WMF2M8-XXX5 NOTES: 1. PA is the address of the memory location to be programmed. 2. PD is the data to be programmed at byte address. 3. D 7 is the output of the complement of the data written to the device. 4. D OUT is the output of the data written to the device. 5. Figure indicates last two bus cycles of four bus cycle sequence. White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 6 A0H tDH tWPH Data tDS tCS WE OE 5.0 V tWP tGHWL CS tWC Addresses 5555H tAS PA PD tAH tWHWH1 Data Polling D7 PA DOUT tOE tCE tRC tDF WRITE/ERASE/PROGRAM OPERATION, WE CONTROLLED tOH FIG. 5 WMF2M8-XXX5 FIG. 6 AAH tDS tDH tVCS VCC Data WE OE CS Addresses tGHWL tCS tWP tAS tWPH 55H 2AAAH 5555H tAH 5555H 80H 5555H AAH 2AAAH 55H SA 10H/30H AC WAVEFORMS CHIP/SECTOR ERASE OPERATIONS NOTE: 1. SA is the sector address for Sector Erase. 7 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WMF2M8-XXX5 FIG. 7 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 8 Data WE OE CS D0-D6 D7 t CH tOEH tCE t OE tWHWH 1 or 2 D7 D0-D6 = Invalid D7 = Valid Data D0-D7 Valid Data t OH t DF High Z AC WAVEFORMS FOR DATA POLLING DURING EMBEDDED ALGORITHM OPERATIONS WMF2M8-XXX5 FIG. 8 A0H tDH tCPH 5.0 V tDS Data CS OE tWS tWC WE Addresses 5555H tGHEL tCP tAS PA PD tAH tWHWH1 Data Polling D7 PA DOUT ALTERNATE CS CONTROLLED PROGRAMMING OPERATION TIMINGS NOTES: 1. PA represents the address of the memory location to be programmed. 2. PD represents the data to be programmed at byte address. 3. D7 is the output of the complement of the data written to the device. 4. DOUT is the output of the data written to the device. 5. Figure indicates the last two bus cycles of a four bus cycle sequence. 9 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WMF2M8-XXX5 PACKAGE 102: 44 LEAD, CERAMIC SOJ** 28.70 (1.13) ± 0.25 (0.010) 3.96 (0.156) MAX 0.89 (0.035) Radius TYP 0.2 (0.008) ± 0.05 (0.002) 11.3 (0.446) ± 0.2 (0.009) 9.55 (0.376) ± 0.25 (0.010) 1.27 (0.050) ± 0.25 (0.010) PIN 1 IDENTIFIER 1.27 (0.050) TYP 26.7 (1.050) TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES ** Package to be developed. PACKAGE 225: 44 LEAD, CERAMIC FLATPACK** 28.45 (1.120) ± 0.26 (0.010) 2.60 (0.102) MAX PIN 1 IDENTIFIER 12.95 (0.510) ± 0.13 (0.005) 10.16 (0.400) ± 0.51 (0.020) 0.43 (0.017) ± 0.05 (0.002) 0.14 (0.006) ± 0.05 (0.002) 1.27 (0.050) TYP 26.67 (1.050) TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES ** Package to be developed. White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 10 WMF2M8-XXX5 PACKAGE 207: 56 LEAD, CERAMIC SOP** 23.63 (0.930) ± 0.25 (0.010) 0.18 (0.007) ± 0.05 (0.002) 21.59 (0.850) TYP 2.87 (0.113) MAX 1.02 (0.040) ± 0.18 (0.007) 12.96 (0.510) ± 0.15 (0.006) 16.13 (0.635) ± 0.13 (0.005) 1.60 (0.063) TYP + + PIN 1 IDENTIFIER 0.80 (0.031) TYP 0.25 (0.010) ± 0.05 (0.002) R = 0.18 (0.007) TYP 0° / -4° SEE DETAIL "A" * Package Dimensions subject to change 0.51 (0.020) TYP 4.06 (0.160) MAX DETAIL "A" ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES PACKAGE DIMENSION: 44 LEAD, CERAMIC LCC** 12.70 (0.500) TYP 1.27 (0.050) TYP 12.70 (0.500) TYP 0.53 (0.021) 0.74 (0.029) PIN 1 1.14 (0.045) 1.40 (0.055) 16.26 (0.640) 16.67 (0.660) 3.05 (0.120) MAX 16.26 (0.640) 16.67 (0.660) PIN 1 IDENTIFIER ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES ** Package to be developed. 11 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com ORDERING INFORMATION W M F 2M 8 - XXX X X 5 X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads VPP PROGRAMMING VOLTAGE 5 = 5V DEVICE GRADE: M = Military, 883 Screened I = Industrial C = Commercial -55°C to +125°C -40°C to +85°C 0°C to +70°C PACKAGE TYPE: DA = 56 Lead CSOP (Package 207) fits standard 56 SSOP footprint DL = 44 Lead Ceramic SOJ (Package 102)* FL = 44 Lead Ceramic Flatpack (Package 225)* L = 44 Lead Ceramic LCC* ACCESS TIME (ns) ORGANIZATION, 2M x 8 Flash MONOLITHIC WHITE ELECTRONIC DESIGNS CORP. * Package to be developed. DEVICE TYPE SECTOR SIZE SPEED 2M x 8 Flash Monolithic 64KByte 2M x 8 Flash Monolithic 2M x 8 Flash Monolithic 64KByte 64KByte White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com PACKAGE SMD NO. 150ns 56 lead CSOP (DA) 5962-97609 01HXX 120ns 90ns 56 lead CSOP (DA) 56 lead CSOP (DA) 5962-97609 02HXX 5962-97609 03HXX 12