Z0103MN, Z0107MN, Z0109MN Sensitive Gate Triac Series Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing. http://onsemi.com TRIAC 1.0 AMPERE RMS 600 VOLTS Features • • • • • Sensitive Gate Trigger Current in Four Trigger Modes Blocking Voltage to 600 V Glass Passivated Surface for Reliability and Uniformity Surface Mount Package These are Pb−Free Devices MT2 MT1 G MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (Sine Wave, 50 to 60 Hz, Gate Open, TJ = −40 to +125°C) VDRM, VRRM 600 V On−State Current RMS (TC = 80°C) (Full Sine Wave 50 to 60 Hz) IT(RMS) 1.0 A ITSM 8.0 A I2t 0.4 A2s Average Gate Power (TC = 80°C, t v 8.3 ms) PG(AV) 1.0 W Peak Gate Current (t v 20 ms, TJ = +125°C) IGM 1.0 A Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Peak Non−repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Considerations (Pulse Width = 8.3 ms) SOT−223 CASE 318E STYLE 11 AYW 10XMN G G 1 2 3 A Y W 10XMN = Assembly Location = Year = Work Week = Device Code x = 3, 7, 9 G = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION Package Shipping† Z0103MNT1G SOT−223 (Pb−Free) 1000/Tape & Reel °C/W Z0107MNT1G SOT−223 (Pb−Free) 1000/Tape & Reel °C Z0109MNT1G SOT−223 (Pb−Free) 1000/Tape & Reel Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient PCB Mounted per Figure 1 RqJA 156 °C/W Thermal Resistance, Junction−to−Tab Measured on MT2 Tab Adjacent to Epoxy RqJT 25 TL 260 Maximum Device Temperature for Soldering Purposes for 10 Secs Maximum 4 Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 June, 2009 − Rev. 3 1 Publication Order Number: Z0103MN/D Z0103MN, Z0107MN, Z0109MN ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit IDRM, IRRM − − − − 5.0 500 mA mA VTM − − 1.56 V OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = +125°C ON CHARACTERISTICS Peak On−State Voltage (ITM = "1.4 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%) Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 30 Ohms) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) Z0103MN Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 30 Ohms) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) Z0107MN Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 30 Ohms) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) Z0109MN Latching Current (VD = 12 V, IG = 1.2 x IGT) MT2(+), G(+) All Types MT2(+), G(−) All Types MT2(−), G(−) All Types MT2(−), G(+) All Types Z0103MN Latching Current (VD = 12 V, IG = 1.2 x IGT) MT2(+), G(+) All Types MT2(+), G(−) All Types MT2(−), G(−) All Types MT2(−), G(+) All Types Z0107MN Latching Current (VD = 12 V, IG = 1.2 x IGT) MT2(+), G(+) All Types MT2(+), G(−) All Types MT2(−), G(−) All Types MT2(−), G(+) All Types Z0109MN IGT mA 0.15 0.15 0.15 0.25 − − − − 3.0 3.0 3.0 5.0 IGT mA 0.15 0.15 0.15 0.25 − − − − 5.0 5.0 5.0 7.0 IGT IL IL IL mA 0.15 0.15 0.15 0.25 − − − − 10 10 10 10 − − − − − − − − 7.0 15 7.0 7.0 − − − − − − − − 10 20 10 10 − − − − − − − − 15 25 15 15 mA mA mA Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 30 Ohms) VGT − − 1.3 V Gate Non−Trigger Voltage (VD = 12 V, RL = 30 Ohms, TJ = 125°C) All Four Quadrants VGD 0.2 − − V IH − − − − 7.0 10 mA di/dt(c) 1.6 − − A/ms 10 20 50 30 60 75 − − − − − 20 Holding Current (VD = 12 Vdc, Initiating Current = 50 mA, Gate Open) (Z0103MA) (Z0107MA, Z0109MA) DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (VD = 400 V, ITM = 0.84 A, Commutating dv/dt = 1.5 V/ms, Gate Open, TJ = 110°C, f = 250 Hz, with Snubber) Critical Rate of Rise of Off−State Voltage (VD = 67% Rated VDRM, Exponential Waveform, Gate Open, TJ = 110°C) Z0103MN Z0107MN Z0109MN dv/dt Repetitive Critical Rate of Rise of On−State Current, TJ = 125°C Pulse Width = 20 ms, IPKmax = 15 A, diG/dt = 1 A/ms, f = 60 Hz di/dt http://onsemi.com 2 V/ms A/ms Z0103MN, Z0107MN, Z0109MN Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VTM VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current on state IRRM at VRRM IH Quadrant 3 MainTerminal 2 − IH off state VTM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 (−) IGT GATE Quadrant I (+) IGT GATE MT1 MT1 REF REF IGT − + IGT (−) MT2 Quadrant III (−) MT2 Quadrant IV (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 Quadrant 1 MainTerminal 2 + + Voltage IDRM at VDRM Z0103MN, Z0107MN, Z0109MN 0.15 3.8 0.079 2.0 0.091 2.3 0.091 2.3 0.244 6.2 0.079 2.0 0.984 25.0 0.059 1.5 0.096 2.44 0.059 1.5 0.059 1.5 0.096 2.44 0.059 1.5 inches mm BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR. BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL. MATERIAL: G10 FIBERGLASS BASE EPOXY 0.096 2.44 0.059 1.5 0.472 12.0 Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223 http://onsemi.com 4 10 Rθ JA , JUNCTION TO AMBIENT THERMAL RESISTANCE, ° C/W IT, INSTANTANEOUS ON‐STATE CURRENT (AMPS) Z0103MN, Z0107MN, Z0109MN 1.0 0.1 TYPICAL AT TJ = 110°C MAX AT TJ = 110°C MAX AT TJ = 25°C 0.01 0 1.0 2.0 3.0 4.0 vT, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS) 5.0 160 150 140 130 120 110 100 90 80 70 60 50 40 30 DEVICE MOUNTED ON FIGURE 1 AREA = L2 T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( °C) L 4 PCB WITH TAB AREA AS SHOWN 1 2 3 MINIMUM FOOTPRINT = 0.076 cm2 0 2.0 Figure 2. On-State Characteristics 4.0 6.0 FOIL AREA (cm2) 8.0 10 Figure 3. Junction to Ambient Thermal Resistance versus Copper Tab Area 110 110 α 30° 90 100 α 60° 90° 80 T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( °C) 100 α = CONDUCTION ANGLE dc 70 α = 180° 60 120° 50 MINIMUM FOOTPRINT 50 OR 60 Hz 40 α = 180° 60 120° 1.0 cm2 FOIL AREA 50 20 α 50 OR 60 Hz 40 30 0.5 dc 70 20 0.4 0.1 0.2 0.3 IT(RMS), RMS ON‐STATE CURRENT (AMPS) 60° 90° 80 30 0 30° 90 α α = CONDUCTION ANGLE 0 0.1 Figure 4. Current Derating, Minimum Pad Size Reference: Ambient Temperature 0.2 0.3 0.4 0.5 0.6 IT(RMS), RMS ON‐STATE CURRENT (AMPS) 0.7 Figure 5. Current Derating, 1.0 cm Square Pad Reference: Ambient Temperature 110 110 α 100 30° 60° 90 dc 30° α 105 α = CONDUCTION 90° 60° dc 100 ANGLE α = 180° 120° 80 T(tab) , MAXIMUM ALLOWABLE TAB TEMPERATURE ( °C) T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( °C) L TYPICAL MAXIMUM 70 4.0 cm2 FOIL AREA 60 α = 180° 95 90° 120° 90 REFERENCE: FIGURE 1 85 α α α = CONDUCTION 50 0 0.1 0.2 0.3 0.4 0.5 0.6 IT(RMS), RMS ON‐STATE CURRENT (AMPS) 0.7 80 0.8 ANGLE 0 Figure 6. Current Derating, 2.0 cm Square Pad Reference: Ambient Temperature 0.1 0.2 0.3 0.4 0.5 0.6 IT(RMS), ON‐STATE CURRENT (AMPS) Figure 7. Current Derating Reference: MT2 Tab http://onsemi.com 5 0.7 0.8 Z0103MN, Z0107MN, Z0109MN 1.0 1.0 α α r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) P(AV) , MAXIMUM AVERAGE POWER DISSIPATION (WATTS) 0.9 0.8 α = CONDUCTION 0.7 ANGLE 0.6 120° 0.5 30° 0.4 α = 180° 0.3 60° dc 90° 0.2 0.1 0.1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 IT(RMS), RMS ON‐STATE CURRENT (AMPS) 0.7 0.01 0.0001 0.8 0.001 Figure 8. Power Dissipation 0.01 0.1 1.0 t, TIME (SECONDS) LL 1N4007 TRIGGER CONTROL MEASURE I CHARGE 100 Figure 9. Thermal Response, Device Mounted on Figure 1 Printed Circuit Board 200 VRMS ADJUST FOR ITM, 60 Hz VAC TRIGGER 10 CHARGE CONTROL NON‐POLAR CL RS ADJUST FOR + dv/dt(c) CS MT2 1N914 51 W 200 V MT1 G Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information. Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage (dv/dt)c 10 10 60 Hz 60° 80° 180 Hz COMMUTATING dv/dt dv/dt c , (V/ μ S) COMMUTATING dv/dt dv/dt c , (V/ μ S) 400 Hz 110° ITM 100° tw f= 1.0 1.0 VDRM 1 2 tw 6fI TM (dińdt) c + 1000 1.0 60 10 300 Hz VDRM = 200 V 70 80 90 100 di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS) TJ, JUNCTION TEMPERATURE (°C) Figure 11. Typical Commutating dv/dt versus Current Crossing Rate and Junction Temperature Figure 12. Typical Commutating dv/dt versus Junction Temperature at 0.8 Amps RMS http://onsemi.com 6 110 Z0103MN, Z0107MN, Z0109MN 60 10 STATIC dv/dt (V/ μs) 50 I GT , GATE TRIGGER CURRENT (mA) 600 Vpk TJ = 110°C MAIN TERMINAL #2 POSITIVE 40 30 MAIN TERMINAL #1 POSITIVE 20 10 100 1000 RG, GATE - MAIN TERMINAL 1 RESISTANCE (OHMS) IGT2 IGT4 IGT1 1.0 0.1 -40 10,000 Figure 13. Exponential Static dv/dt versus Gate − Main Terminal 1 Resistance 40 60 0 20 TJ, JUNCTION TEMPERATURE (°C) 80 100 1.1 VGT , GATE TRIGGER VOLTAGE (VOLTS) IH , HOLDING CURRENT (mA) -20 Figure 14. Typical Gate Trigger Current Variation 6.0 5.0 4.0 MAIN TERMINAL #2 POSITIVE 3.0 2.0 MAIN TERMINAL #1 POSITIVE 1.0 0 -40 IGT3 -20 0 20 40 60 80 0.3 -40 100 TJ, JUNCTION TEMPERATURE (°C) VGT3 VGT4 VGT2 VGT1 -20 0 20 40 60 80 TJ, JUNCTION TEMPERATURE (°C) Figure 15. Typical Holding Current Variation Figure 16. Gate Trigger Voltage Variation http://onsemi.com 7 100 Z0103MN, Z0107MN, Z0109MN PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE L D b1 DIM A A1 b b1 c D E e e1 L1 HE 4 HE E 1 2 3 b e1 e q C q A 0.08 (0003) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A1 L1 MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0° MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10° − MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10° STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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