SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES ZC820 SERIES ZC820 SERIES ISSUE 2 MARCH 94 DIODE PIN CONNECTION 1 200 1 CATHODE 2 2 ANODE E-Line TO92 Compatible Diode Capacitance (pF) 100 ABSOLUTE MAXIMUM RATINGS. 826 825 10 824 823 822 821 820 10 Reverse Voltage (Volts) Diode Capacitance SYMBOL MAX UNIT Reverse Voltage VR 25 V Forward Current IF 200 mA Power Dissipation at Tamb=25°C Ptot 300 mW Junction Temperature Tj 125 °C Storage Temperature Range Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb =25°C) 1 1 PARAMETER 100 PARAMETER SYMBOL MIN Reverse Voltage Leakage IR Temperature Coefficient of Capacitance η TYP 0.03 MAX UNIT CONDITIONS 0.02 µA 0.04 %/°C VR=3V TUNING CHARACTERISTICS (at Tamb =25°C) PART NO Nominal Capacitance in pF @ VR=2V, f=1MHz Minimum Q @ VR=3V f=50MHz MIN NOM MAX 8 10 12 ZC821 12 15 18 300 5 6.5 ZC822 17.6 22 26.4 200 5 6.5 ZC823 26.4 33 39.6 200 5 6.5 ZC824 37.6 47 56.4 200 5 6.5 ZC825 54.4 68 81.6 100 5 6.5 ZC826 80 100 120 100 5 6.5 ZC820 300 *Available with 2V nominal capacitance ±10 suffix A, ± 5% suffix B 3-108 Capacitance Ratio C2 /C20, at f=1MHz 3-107 MIN MAX 5 6.5 SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES ZC820 SERIES ZC820 SERIES ISSUE 2 MARCH 94 DIODE PIN CONNECTION 1 200 1 CATHODE 2 2 ANODE E-Line TO92 Compatible Diode Capacitance (pF) 100 ABSOLUTE MAXIMUM RATINGS. 826 825 10 824 823 822 821 820 10 Reverse Voltage (Volts) Diode Capacitance SYMBOL MAX UNIT Reverse Voltage VR 25 V Forward Current IF 200 mA Power Dissipation at Tamb=25°C Ptot 300 mW Junction Temperature Tj 125 °C Storage Temperature Range Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb =25°C) 1 1 PARAMETER 100 PARAMETER SYMBOL MIN Reverse Voltage Leakage IR Temperature Coefficient of Capacitance η TYP 0.03 MAX UNIT CONDITIONS 0.02 µA 0.04 %/°C VR=3V TUNING CHARACTERISTICS (at Tamb =25°C) PART NO Nominal Capacitance in pF @ VR=2V, f=1MHz Minimum Q @ VR=3V f=50MHz MIN NOM MAX 8 10 12 ZC821 12 15 18 300 5 6.5 ZC822 17.6 22 26.4 200 5 6.5 ZC823 26.4 33 39.6 200 5 6.5 ZC824 37.6 47 56.4 200 5 6.5 ZC825 54.4 68 81.6 100 5 6.5 ZC826 80 100 120 100 5 6.5 ZC820 300 *Available with 2V nominal capacitance ±10 suffix A, ± 5% suffix B 3-108 Capacitance Ratio C2 /C20, at f=1MHz 3-107 MIN MAX 5 6.5