SM-8 DUAL N-CHANNEL ENHANCEMENT MODE AVALANCHE RATED MOSFET ZDM4206N ISSUE 1 - NOVEMBER 1995 D1 G1 D1 S1 D2 G2 D2 S2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – M4206N ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25°C ID 1 A Pulsed Drain Current IDM 8 A Gate-Source Voltage VGS ± 20 V Continuous Body Diode Current at Tamb =25°C ISD 1 A Avalanche Current – Repetitive IAR 600 mA Avalanche Energy – Repetitive EAR 15 mJ Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Ptot Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally VALUE UNIT 2.25 2.75 W W 18 22 mW/ °C mW/ °C 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 317 ZDM4206N ZDM4206N TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). Gate-Source Threshold Voltage VGS(th) Gate-Body Leakage Zero Gate Voltage Drain Current V V ID=1mA, VDS= VGS IGSS 100 nA VGS=± 20V, VDS=0V IDSS 10 100 µA µA VDS=60V, VGS=0 VDS=48V, VGS=0V, T=125°C(2) ID(on) Static Drain-Source On-State Resistance (1) RDS(on) 1.3 ID=1mA, VGS=0V 3 On-State Drain Current(1) Forward Transconductance(1)(2) 60 3 1 1.5 gfs 300 A VDS=25V, VGS=10V Ω Ω VGS=10V,ID=1.5A VGS=5V,ID=0.5A mS Input Capacitance (2) Ciss 100 pF Common Source Output Capacitance (2) Coss 60 pF Reverse Transfer Capacitance (2) Crss 20 pF Turn-On Delay Time (2)(3) td(on) 8 ns Rise Time (2)(3) tr 12 ns Turn-Off Delay Time (2)(3) td(off) 12 ns Fall Time (2)(3) tf 15 ns 10 8 6 4 ID= 3A 1.5A 0.5A 2 2 4 6 8 VDS=25V,ID=1.5A VDD ≈25V, ID=1.5A,VGEN=10V 0 0 10 20 30 40 5V 4.5V 4V 3.5V 50 8 6 10V 9V 8V 4 2 0 2 4 6 8 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics 4.5V VGS=3.5V 10 6 8 10 8V 10V 6V 2.6 14V 1.0 20V 20V 0.1 0.1 2.4 VGS=10V ID=1.5A 2.2 2.0 e nc ta sis e eR rc ou -S n ai Dr 1.8 1.6 1.4 1.2 7V 6V 5V 4.5V 4V 3.5V 10 0.8 Gate Threshold Voltage VGS(TH) 0.6 -50 -25 900 800 VDS=10V 500 400 300 200 100 0 2 3 4 5 25 50 75 100 125 150 175 200 225 Normalised RDS(on) and VGS(th) v Temperature 1000 1 0 Tj-Junction Temperature (°C) 900 800 0 VGS=VDS ID=1mA 1.0 1000 700 600 ) on S( RD 10 1.0 6 7 8 9 10 700 600 VDS=10V 500 400 300 200 100 0 0 1 2 3 4 5 6 7 8 9 10 VGS-Gate Source Voltage (Volts) ID- Drain Current (Amps) Transconductance v drain current 3 - 318 4 VGS-Gate Source Voltage (Volts) gfs-Transconductance (mS) 6V 2 VGS= 20V 16V 14V 12V gfs-Transconductance (mS) 7V ID - Drain Current (Amps) ID - Drain Current (Amps) 4 2 Transfer Characteristics On-resistance v drain current 10V 9V 8V 0 10 ID-Drain Current (Amps) 10 6 2 VDS=25V, VGS=0V, f=1MHz TYPICAL CHARACTERISTICS 8 4 Voltage Saturation Characteristics (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator VGS= 20V 16V 14V 12V VDS=10V 0 0 0 6 VGS-Gate Source Voltage (Volts) (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 10 ID - Drain Current (Amps) BVDSS UNIT CONDITIONS. Normalised RDS(on) and VGS(th) Drain-Source Breakdown Voltage MAX. VDS-Drain Source Voltage (Volts) SYMBOL MIN. RDS(on)-Drain Source On Resistance (Ω) PARAMETER Transconductance v gate-source voltage 3 - 319 ZDM4206N ZDM4206N TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). Gate-Source Threshold Voltage VGS(th) Gate-Body Leakage Zero Gate Voltage Drain Current V V ID=1mA, VDS= VGS IGSS 100 nA VGS=± 20V, VDS=0V IDSS 10 100 µA µA VDS=60V, VGS=0 VDS=48V, VGS=0V, T=125°C(2) ID(on) Static Drain-Source On-State Resistance (1) RDS(on) 1.3 ID=1mA, VGS=0V 3 On-State Drain Current(1) Forward Transconductance(1)(2) 60 3 1 1.5 gfs 300 A VDS=25V, VGS=10V Ω Ω VGS=10V,ID=1.5A VGS=5V,ID=0.5A mS Input Capacitance (2) Ciss 100 pF Common Source Output Capacitance (2) Coss 60 pF Reverse Transfer Capacitance (2) Crss 20 pF Turn-On Delay Time (2)(3) td(on) 8 ns Rise Time (2)(3) tr 12 ns Turn-Off Delay Time (2)(3) td(off) 12 ns Fall Time (2)(3) tf 15 ns 10 8 6 4 ID= 3A 1.5A 0.5A 2 2 4 6 8 VDS=25V,ID=1.5A VDD ≈25V, ID=1.5A,VGEN=10V 0 0 10 20 30 40 5V 4.5V 4V 3.5V 50 8 6 10V 9V 8V 4 2 0 2 4 6 8 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics 4.5V VGS=3.5V 10 6 8 10 8V 10V 6V 2.6 14V 1.0 20V 20V 0.1 0.1 2.4 VGS=10V ID=1.5A 2.2 2.0 e nc ta sis e eR rc ou -S n ai Dr 1.8 1.6 1.4 1.2 7V 6V 5V 4.5V 4V 3.5V 10 0.8 Gate Threshold Voltage VGS(TH) 0.6 -50 -25 900 800 VDS=10V 500 400 300 200 100 0 2 3 4 5 25 50 75 100 125 150 175 200 225 Normalised RDS(on) and VGS(th) v Temperature 1000 1 0 Tj-Junction Temperature (°C) 900 800 0 VGS=VDS ID=1mA 1.0 1000 700 600 ) on S( RD 10 1.0 6 7 8 9 10 700 600 VDS=10V 500 400 300 200 100 0 0 1 2 3 4 5 6 7 8 9 10 VGS-Gate Source Voltage (Volts) ID- Drain Current (Amps) Transconductance v drain current 3 - 318 4 VGS-Gate Source Voltage (Volts) gfs-Transconductance (mS) 6V 2 VGS= 20V 16V 14V 12V gfs-Transconductance (mS) 7V ID - Drain Current (Amps) ID - Drain Current (Amps) 4 2 Transfer Characteristics On-resistance v drain current 10V 9V 8V 0 10 ID-Drain Current (Amps) 10 6 2 VDS=25V, VGS=0V, f=1MHz TYPICAL CHARACTERISTICS 8 4 Voltage Saturation Characteristics (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator VGS= 20V 16V 14V 12V VDS=10V 0 0 0 6 VGS-Gate Source Voltage (Volts) (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 10 ID - Drain Current (Amps) BVDSS UNIT CONDITIONS. Normalised RDS(on) and VGS(th) Drain-Source Breakdown Voltage MAX. VDS-Drain Source Voltage (Volts) SYMBOL MIN. RDS(on)-Drain Source On Resistance (Ω) PARAMETER Transconductance v gate-source voltage 3 - 319