ZDS1009 SM-8 COMPLEMENTARY CURRENT MIRROR DESCRIPTION The ZDS1009 current mirror has been developed specifically for high side, current sense plus level translation applications and as such will find a broad a p p l i c at i ons bas e i nc l udi ng bat t e r y ch a r g e management, DC motor control and over current monitoring functions. It is of particular interest for current sense applications for feedback purposes in fast battery chargers for Li-Ion cell based systems. The device functions by sensing the voltage developed across an external (user defined) high side current sense resistor, and by an arrangement of current mirrors refer this sensed voltage, with or without multiplication, to a low side referenced signal. This signal can then be used, for example, to close the control loop to a controller IC, for a DC-DC converter providing charge to a battery. FEATURES • Excellent Temperature Tracking Characteristics • Compact Cost Effective Solution • Simplifies Circuit Implementation • Broad application base from Single Cell Li-ion High Side Current sense chargers to Multi-cell Lead-Acid systems • Only 4 Connections required SCHEMATIC DIAGRAM SM-8 (8 LEAD SOT223) TYPICAL APPLICATION CIRCUIT Vsense = IR2 R 4 R 1 For balance R3=R4 eg R2=100mΩ R1=R3=R4=100Ω Vsense sensitivity = 100mV/A CONNECTION DIAGRAM ISSUE 2 - JANUARY 2000 1 ZDS1009 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Maximum Operating Voltage V y1-x1 120 V Maximum Voltage (E1-E2,E3-E4) V E-E’ 10 V Peak Pulse Current IM 4 A Continuous Current (E1-E4,E2-E3) IC 1 A Total Power Dissipation at T amb = 25°C* Operating and Storage Temperature Range P tot 2 W -55 to +150 °C T j :T stg * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. ELECTRICAL CHARACTERISTICS (at Tamb=25°C) Parameter Symbol Min Unit Conditions Breakdown Voltage BV Y1-X1 120 Max V I Y1 =100µA Breakdown Voltage BV X1-E1 -30 V I X1 =-10mA Breakdown Voltage BV Y1-E3 30 V I Y1 =10mA Breakdown Voltage BV E1-Y1 -12 V I E1 =-100µA Breakdown Voltage BV E2-Y1 -6 V I E2 =-100µA Breakdown Voltage BV E3-X1 12 V I E3 =100µA 6 Breakdown Voltage BV E4-X1 V I E4 =100uA Leakage I Y1 50 nA V Y1-X1 =100V Leakage I X1 -10 µA V X1-E1 =-30V, V y1 =V E1 Leakage I Y1 10 µA V Y1-E3 =30V,V X1 =V E3 Leakage I E1 -100 nA V E1-Y1 =-8V Leakage I E2 -100 nA V E2-Y1 =-4V Leakage I E3 100 nA V E3-X1 =8V Leakage I E4 100 nA V E4-X1 =4V Input Voltage V Y1-E2 -1.45 -1.65 V I Y1 =-1A Input Voltage V Y1-E3 1.45 1.75 V I Y1 =1A,V X1 =V Y1 Input Voltage V X1-E1 -1.45 -1.75 V I X1 =-1A,V X1 =V Y1 Input Voltage V X1-E4 1.45 1.65 V Transfer Characteristic V OUT 0.99 1.01 V See Fig 1.V CC =5V R1=R3=R4=100Ω, V IN =1V Transfer Characteristic V OUT 1 mV See Fig 1.V CC =5V R1=R3=R4=100Ω, V IN =5mV Output Zero-Offset Voltage V OFFSET mV See Fig 2.V CC =5V,R 2 <1Ω R1=R3=R4=100Ω 4 I X1 =1A ISSUE 2 - JANUARY 2000 2 ZDS1009 TYPICAL CHARACTERISTICS 1.20 1.3 +25°C Vin = 0.1V Vcc=5V 1.2 Voltage Transfer 1.15 Voltage Transfer +25°C 1.10 1.05 R = 10⍀ R = 100⍀ R = 1 k⍀ 1.00 0.95 0 5 10 15 20 25 30 1.1 1.0 R = 10⍀ R = 100⍀ R = 1 k⍀ 0.9 0.8 0.7 10m 35 100m Vcc - Supply Voltage(V) Voltage Transfer v Supply Voltage Phase Change (Degrees) Voltage Transfer 0.90 R = 10k⍀ R = 1k⍀ R = 100⍀ 0.70 Vin = 1V Vcc = 5V 0.60 10 Voltage Transfer v Input Voltage 1.00 0.80 1 Vin - Input Voltage (V) VAC = 0.1V 180 200 220 R = 10k⍀ 240 R = 1k⍀ R = 100⍀ 260 280 Vin = 1V 300 Vcc = 5V VAC = 0.1V 320 340 T = 25°C T = 25°C 0.50 100 1k 10k 100k 1M Frequency (Hz) 360 1k 10k 100k 1M Frequency (Hz) Phase Change v Frequency Response Voltage Transfer v Frequency Response TEST CIRCUITS Figure 2 Output Zero-Offset Voltage Test Circuit Figure 1 Transfer Characteristic Test Circuit ISSUE 2 - JANUARY 2000 3 ZDS1009 TYPICAL CHARACTERISTICS NPN 1.4 PNP 1.4 +25°C +25°C Iout = 0.95Iin Iout = 0.95Iin 1.2 Voltage - (V) Voltage - (V) 1.2 1.0 0.8 Vin Vcutoff 0.6 0.4 100µA 1mA 10mA 100mA 1.0 0.8 Vin Vcutoff 0.6 0.4 100µ 1A 1m Iin - Input Current (A) 10m NPN Iin = 1mA Iout = 0.95mA 1.4 1.2 1.2 1.0 Voltage (V) Voltage (V) PNP 1.6 Iin = 1mA Iout = 0.95mA 1.4 0.8 0.6 Vcutoff 0.4 1.0 0.8 0.6 0.4 Vcutoff 0.2 Vin Vin 0.2 0 -55 -35 -15 5 25 45 65 85 105 0 -60 125 -40 Temperature (°C) 0 20 40 60 80 100 120 Input/Output Voltage v Temperature PNP NPN 1.05 1.05 +25°C 25 C 1.04 1.03 1.03 1.02 1.02 Current Transfer Current Transfer -20 Temperature (°C) Input/Output Voltage v Temperature 1.04 1A Input/Cutoff Voltage v Iin Input/Cutoff Voltage v Iin 1.6 100mA Iin - Input Current (A) 1.01 1.00 0.99 10mA 1mA 100µA 0.98 0.97 0.96 0.95 1.01 1.00 0.99 0.98 10mA 0.97 1mA 100µA 0.96 0.95 1m 1 10 0.1 100 Vce (V) - Collector-Emitter Voltage (V) 1 10 Vce - Collector-Emitter Voltage(V) Current Transfer v Vce Current Transfer v Vce ISSUE 2 - JANUARY 2000 4 ZDS1009 PACKAGE DIMENSIONS He DIM A E Millimetres A1 Min Typ Inches Max Min Typ Max - - 1.7 - - 0.067 0.02 - 0.1 0.0008 - 0.004 b - 0.7 - - 0.028 - c 0.24 - 0.32 0.009 - 0.013 D 6.3 - 6.7 0.248 - 0.264 E 3.3 - 3.7 0.130 - 0.145 e1 - 4.59 - - 0.180 - e2 - 1.53 - - 0.060 - He 6.7 - 7.3 0.264 - 0.287 Lp 0.9 - - 0.035 - - α - - 15° - - 15° β - 10° - - 10° - e1 e2 3 6 4 5 A A1 8 1 2 7 o 45° c Lp ORDERING INFORMATION DEVICE PARTMARKING ZDS1009 S1009 Zetex plc. Fields New Road, Chadderton, Oldham, OL9 8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (631) 543-7100 Fax: (631) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide © Zetex plc 2000 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ISSUE 2 - JANUARY 2000 5