SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6702 ISSUE 2 February 1997 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T6702 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 80 -80 V Collector-Emitter Voltage VCEO 60 -60 V Emitter-Base Voltage VEBO 10 -10 V Peak Pulse Current ICM 4 -4 A 1.75 -1.75 Continuous Collector Current IC Operating and Storage Temperature Range Tj:Tstg -55 to +150 A °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die on Both die on equally Ptot Derate above 25°C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally VALUE UNIT 2.25 2.75 W W 18 22 mW/ °C mW/ °C 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. ZDT6702 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 80 200 V IC=100µ A Collector-Emitter Breakdown Voltage V(BR)CEO 60 100 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 10 15 V IE=100µ A Collector Cutoff Current ICBO 0.5 10 10 µA nA VCB=60V VCB=60V,T amb =100°C Emitter Cutoff Current IEBO 0.1 10 nA VEB=8V Colllector-Emitter Cutoff Current ICES 50 500 nA VCE =60V Collector-Emitter Saturation Voltage VCE(sat) 0.83 1.0 0.95 1.28 V V IC=0.5A, I B=0.5mA* IC=1.75A, IB=2mA* Base-Emitter Saturation Voltage VBE(sat) 1.68 1.85 V IC=1.75A, IB=2mA* Base-Emitter Turn-On Voltage VBE(on) 1.55 1.75 V IC=1.75A, VCE=5V* Static Forward hFE Current Transfer Ratio 5K 5K 3.5K 0.5K MAX. IC=10mA, VCE=5V IC=500mA, VCE=5V IC=2A, VCE=5V IC=4A, VCE=5V* 13K 13K 9K 2K Transition Frequency fT 140 MHz IC=100mA, VCE=10V f=100MHz Input Capacitance Cibo 70 pF VEB=500mV, f=1MHz Output Capacitance Cobo 15 pF VCB=10V, f=1MHz Switching Times ton 0.5 µs toff 2.1 µs IC=500mA, VCE=10V IB1=IB2=0.5mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% ZDT6702 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -80 -120 V IC=-100µ A Collector-Emitter Breakdown Voltage VCEO(SUS) -60 -90 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -10 -15 V IE=-100µ A Collector Cutoff Current ICBO -0.5 -10 -10 µA nA VCB=-60V VCB=-60V, Tamb=100°C Emitter Cutoff Current IEBO -0.1 -10 nA VEB=-8V Collector-Emitter Cutoff Current ICES -50 -500 nA VCE =-60V Collector-Emitter Saturation Voltage VCE(sat) -0.86 -1.05 -1.0 -1.28 V V IC=-0.5A, IB=-0.5mA* IC=-1.75A, IB=-2mA* Base-Emitter Saturation Voltage VBE(sat) -1.7 -1.9 V IC=-1.75A, IB=-2mA* Base-Emitter Turn-On Voltage VBE(on) -1.55 -1.85 V IC=-1.75A, VCE=-5V* Static Forward hFE Current Transfer Ratio 2K 2K 1.5K 1K MAX. IC=-10mA, VCE=-5V* IC=-500mA, VCE=-5V* IC=-2A, VCE=-5V* IC=-4A, VCE=-5V* 8K 8K 7K 4K Transition Frequency fT 140 MHz IC=-100mA, VCE=-10V f=100MHz Input Capacitance Cibo 90 pF VEB=-0.5V, f=1MHz Output Capacitance Cobo 25 pF VCE=-10V, f=1MHz Switching Times ton 0.75 µs toff 1.2 µs IC=-0.5A, VCE=-10V IB1=IB2=-0.5mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% ZDT6702 TYPICAL CHARACTERISTICS (NPN TRANSISTOR) 1.2 +25°C 1.0 0.8 0.8 IC/IB=1000 IC/IB=500 0.6 0.6 0.4 0.4 0.2 0.2 0 1m 10m 100m 1 10 1m IC - Collector Current (A) VCE(sat) v IC 20K +85°C +25°C -55°C 1.2 8K 0.8 4K 0.4 10m 100m 1 IC - Collector Current (A) 10 0 1m hFE v IC 2.0 10m 100m 1 10 IC/IB=1000 1.6 12K 1m -55°C +25°C +85°C +150°C IC - Collector Current (A) VCE(sat) v IC 2.0 VCE=5V 16K 0 IC/IB=1000 1.0 -55°C +25°C +85°C +150°C 10m 100m 1 IC - Collector Current (A) VBE(sat) v IC 10 10 VCE=5V 1.6 1 1.2 0.8 -55°C +25°C +85°C +150°C 0.4 0 1m 10m 100m 1 IC - Collector Current (A) VBE(on) v IC 100m 10 10m 100m DC 1s 100ms 10ms 1ms 100us 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area 100 ZDT6702 TYPICAL CHARACTERISTICS (PNP TRANSISTOR) 1.2 +25°C 1.0 0.8 0.8 IC/IB=1000 IC/IB=500 0.6 0.6 0.4 0.4 0.2 0.2 0 IC/IB=1000 1.0 1m 20k 10m 100m 1 IC - Collector Current (A) VCE(sat) v IC 10 0 1m 2.0 VCE=5V +85°C +25°C -55°C 15k -55°C +25°C +85° C +150° C 10m 100m 1 IC - Collector Current (A) VCE(sat) v IC IC/IB=1000 1.6 1.2 10k 0.8 5k 0 10 -55° C +25°C +85°C +150°C 0.4 1m 10m 100m 1 IC - Collector Current (A) 10 0 1m hFE v IC 2.0 10m 100m 1 IC - Collector Current (A) VBE(sat) v IC 10 10 VCE=5V 1.6 1 1.2 -55° C +25° C +85° C +150° C 0.8 100m 0.4 0 1m 10m 100m 1 IC - Collector Current (A) VBE(on) v IC 10 10m 100m DC 1s 100ms 10ms 1ms 100us 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area 100 ZDT6702 OTHER CHARACTERISTICS 4 D= 1 50 D= t1 tP t1 40 3 tP 30 2 20 D= 0.5 D= 0.2 D= 0.1 D= 0.05 Single Pulse 10 0 100us 1ms 10ms 100ms 1s Pulse Width 10s 1 100s 0 0 20 40 2.00 2.00 1.50 1.50 1.00 Rs = 1Mohm Rs = o/c 0.50 0 10 80 100 120 140 160 Derating curve (single device) Transient Thermal Resistance (single device) 1.00 60 T - Ambient Temperature (° C) Rs = o/c 0.50 VCE - Collector Emitter Voltage (V) Voltage Derating 100 0 10 VCE - Collector Emitter Voltage (V) Voltage Derating 100 ZDT6702 He A E 8 e1 1 2 7 D e2 3 b 6 4 5 A1 o 45° c Dim 3 Millimetres Inches Min Typ Max Min Typ Max A 1.7 0.067 A1 0.02 0.1 0.0008 0.004 b 0.7 0.028 Lp c 0.24 0.32 0.009 0.013 D 6.3 6.7 0.248 0.264 E 3.3 3.7 0.130 0.145 e1 4.59 0.180 e2 1.53 0.060 0.287 He 6.7 7.3 0.264 Lp 0.9 0.035 α 15° 15° β 10° 10° Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1997 Internet: http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.