SM-8 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS ZDT6718 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T6718 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 20 -20 V Collector-Emitter Voltage VCEO 20 -20 V Emitter-Base Voltage VEBO 5 -5 V Peak Pulse Current ICM 6 -6 A Continuous Collector Current IC 2 -1.5 Operating and Storage Temperature Range Tj:Tstg -55 to +150 A °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die on Both die on equally Ptot Derate above 25°C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally VALUE UNIT 2 2.5 W W 16 20 mW/ °C mW/ °C 62.5 50 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 372 ZDT6718 ZDT6718 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). UNIT CONDITIONS. PARAMETER SYMBOL MIN. TYP. 100 V IC=100µ A Collector-Base Breakdown Voltage V(BR)CBO -20 -65 V IC=-100µ A 20 27 V IC=10mA* Collector-Emitter Breakdown Voltage V(BR)CEO -20 -55 V IC=-10mA* 5 8.3 V IE=100µ A Emitter-Base Breakdown Voltage V(BR)EBO -5 -8.8 V IE=-100µ A 100 nA VCB=16V Collector Cutoff Current ICBO -100 nA VCB=-15V IEBO 100 nA VEB=4V Emitter Cutoff Current IEBO -100 nA VEB=-4V Collector Emitter Cutoff Current ICES 100 nA VCES=16V Collector Emitter Cutoff Current ICES -100 nA VCES=-15V Collector-Emitter Saturation Voltage VCE(sat) 7 70 130 15 150 200 mV mV mV IC=0.1A, IB=10mA* IC=1A, IB=10mA* IC=2.5A, IB=50mA* Collector-Emitter Saturation Voltage VCE(SAT) -16 -130 -145 -40 -200 -220 mV mV mV Base-Emitter Saturation Voltage VBE(sat) 0.89 1.0 V IC=2.5A, IB=50mA* IC=-0.1A, IB=-10mA* IC=-1A, IB=-20mA* IC=-1.5A, IB=-50mA* Base-Emitter Saturation Voltage VBE(SAT) -0.87 -1.0 V IC=-1.5A, IB=-50mA* Base-Emitter Turn-On Voltage VBE(on) 0.79 1.0 V IC=2.5A, VCE=2V* Base-Emitter Turn-On Voltage VBE(ON) -0.81 -1.0 V IC=-2A, VCE=-2V* Static Forward Current Transfer Ratio hFE 200 300 200 100 400 450 360 180 Static Forward Current Transfer Ratio hFE Transition Frequency fT 100 140 300 300 150 50 15 475 450 230 70 30 23 fT 180 Cobo Transition Frequency 150 Output Capacitance Turn-On Time ton 170 Output Capacitance Cobo 21 Turn-Off Time toff 400 Turn-On Time ton 40 Turn-Off Time toff 670 PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 20 Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector Cutoff Current ICBO Emitter Cutoff Current MAX. IC=10mA, VCE=2V* IC=200mA, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* 30 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see SuperSOT FMMT618 datasheet. 3 - 373 VCC=10V, IC=1A IB1=-IB2=10mA MAX. UNIT IC=-10mA, VCE=-2V* IC=-100mA, VCE=-2V* IC=-2A, VCE=-2V* IC=-4A, VCE=-2V* IC=-6A, VCE=-2V* 30 MHz IC=-50mA, VCE=-10V f=100MHz pF VCB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see SuperSOT FMMT718 datasheet. 3 - 374 CONDITIONS. VCC=-10V, IC=-1A IB1=IB2=20mA ZDT6718 ZDT6718 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). UNIT CONDITIONS. PARAMETER SYMBOL MIN. TYP. 100 V IC=100µ A Collector-Base Breakdown Voltage V(BR)CBO -20 -65 V IC=-100µ A 20 27 V IC=10mA* Collector-Emitter Breakdown Voltage V(BR)CEO -20 -55 V IC=-10mA* 5 8.3 V IE=100µ A Emitter-Base Breakdown Voltage V(BR)EBO -5 -8.8 V IE=-100µ A 100 nA VCB=16V Collector Cutoff Current ICBO -100 nA VCB=-15V IEBO 100 nA VEB=4V Emitter Cutoff Current IEBO -100 nA VEB=-4V Collector Emitter Cutoff Current ICES 100 nA VCES=16V Collector Emitter Cutoff Current ICES -100 nA VCES=-15V Collector-Emitter Saturation Voltage VCE(sat) 7 70 130 15 150 200 mV mV mV IC=0.1A, IB=10mA* IC=1A, IB=10mA* IC=2.5A, IB=50mA* Collector-Emitter Saturation Voltage VCE(SAT) -16 -130 -145 -40 -200 -220 mV mV mV Base-Emitter Saturation Voltage VBE(sat) 0.89 1.0 V IC=2.5A, IB=50mA* IC=-0.1A, IB=-10mA* IC=-1A, IB=-20mA* IC=-1.5A, IB=-50mA* Base-Emitter Saturation Voltage VBE(SAT) -0.87 -1.0 V IC=-1.5A, IB=-50mA* Base-Emitter Turn-On Voltage VBE(on) 0.79 1.0 V IC=2.5A, VCE=2V* Base-Emitter Turn-On Voltage VBE(ON) -0.81 -1.0 V IC=-2A, VCE=-2V* Static Forward Current Transfer Ratio hFE 200 300 200 100 400 450 360 180 Static Forward Current Transfer Ratio hFE Transition Frequency fT 100 140 300 300 150 50 15 475 450 230 70 30 23 fT 180 Cobo Transition Frequency 150 Output Capacitance Turn-On Time ton 170 Output Capacitance Cobo 21 Turn-Off Time toff 400 Turn-On Time ton 40 Turn-Off Time toff 670 PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 20 Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector Cutoff Current ICBO Emitter Cutoff Current MAX. IC=10mA, VCE=2V* IC=200mA, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* 30 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see SuperSOT FMMT618 datasheet. 3 - 373 VCC=10V, IC=1A IB1=-IB2=10mA MAX. UNIT IC=-10mA, VCE=-2V* IC=-100mA, VCE=-2V* IC=-2A, VCE=-2V* IC=-4A, VCE=-2V* IC=-6A, VCE=-2V* 30 MHz IC=-50mA, VCE=-10V f=100MHz pF VCB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see SuperSOT FMMT718 datasheet. 3 - 374 CONDITIONS. VCC=-10V, IC=-1A IB1=IB2=20mA