SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT” ISSUE 1 - NOVEMBER 1997 ZHCS1006 ✪ FEATURES: • High current capability • Low V F APPLICATIONS: • Mobile telecomms, PCMIA & SCSI • DC-DC Conversion PARTMARKING DETAILS : S16 1 C 2 1 A 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Continuous Reverse Voltage VR 60 V Forward Current IF 900 mA Forward Voltage @ IF = 1000mA(typ) VF 600 mV Average Peak Forward Current;D.C.= 50% IFAV 1600 mA Non Repetitive Forward Current t≤100µs t≤10ms IFSM 12 5 A A Power Dissipation at Tamb= 25° C Ptot 500 mW Storage Temperature Range Tstg -55 to + 150 °C Junction Temperature Tj 125 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Reverse Breakdown Voltage V (BR)R 60 80 V IR= 300µA Forward Voltage VF 245 275 330 395 455 510 620 280 320 390 470 530 600 740 mV mV mV mV mV mV mV IF= IF= IF= IF= IF= IF= IF= Reverse Current IR 50 100 µA V R= 45V Diode Capacitance CD 17 pF f= 1MHz,V R= 25V Reverse Recovery Time t rr 12 ns switched from IF = 500mA to IR = 500mA Measured at IR = 50mA *Measured under pulsed conditions. Pulse width= 300µs. Duty cycle ≤2% 50mA* 100mA* 250mA* 500mA* 750mA* 1000mA* 1500mA* ZHCS1006 TYPICAL CHARACTERISTICS TYPICAL CHARACTERISTICS 1 IR - Reverse Current (A) IF - Forward Current (A) 10 1 100m +125°C +25°C -55°C 10m 1m 0 0.1 0.2 0.3 0.4 0.5 100m 1m +100°C +50°C 100u 10u +25°C 1u 100n 10n 1n 0.6 +125°C 10m -55°C 0 VF - Forward Voltage (V) IF v VF t D=t 1/t p I F(pk) Typical Tj=125°C D=0.5 t p I F(av) =DxI D=0.2 PF(av) =I 0.4 F(av) F(pk) xV F D=0.1 D=0.05 0.2 75 85 95 105 115 Tj=125°C 0.4 t D=t 1/t p I F(pk) DC D=0.5 D=0.2 D=0.1 D=0.05 0 125 1 0.2 0 TC - Case Temperature (°C) IF(av) v TC 0.4 t p I F(av) =DxI PF(av) =I 0.8 F(av) F(pk) xV F 1.2 IF(av) - Avg Fwd Curr (A) PF(av) v IF(av) 125 140 CD - Diode Capacitance (pF) Ta - Ambient Temp (°C) 60 Typical 1 PF(av) - Avg Pwr Diss (W) IF(av) - Avg Fwd Cur (A) DC 0.6 Rth=100°C/W 100 Rth=200°C/W Rth=300°C/W 75 40 0.6 0.8 0 20 VR - Reverse Voltage (V) IR v VR 1 10 VR - Reverse Voltage (V) T a v VR 100 70 0 0 20 40 VR - Reverse Voltage (V) CD v VR 60 ZHCS1006 TYPICAL CHARACTERISTICS MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate.