DIODES ZHCS2000TA

ZHCS2000
40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE
SUMMARY
VR=40V; IC= 2A
DESCRIPTION
A surface mount Schottky Barrier Diode featuring low forward voltage drop
suitable for high frequency rectification and reverse voltage protection.
FEATURES
SOT23-6
•
High current capability
•
Low forward voltage (VFmax=0.5V)
•
Fast recovery time
•
Small package size
C
APPLICATIONS
•
Mobile telecomms, PCMIA & SCSI
•
DC-DC Conversion
•
High frequency rectification
A
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZHCS2000TA
7
8mm embossed
3000 units
ZHCS2000TC
13
8mm embossed
10000 units
C
C
A
C
C
A
Top View
DEVICE MARKING
ZS20
ISSUE 2 - DECEMBER 2002
1
ZHCS2000
ABSOLUTE MAXIMUM RATINGS.
VALUE
UNIT
VR
40
V
Forward Current
IF
2
A
Average Peak Forward Current;D.C.=50%
I FAV
4
A
Non Repetitive Forward Current t≤ 100µs
t≤ 10ms
I FSM
20
10
A
A
Power Dissipation at T amb =25°C
P tot
1.1
W
Storage Temperature Range
T stg
-55 to +150
°C
Junction Temperature
Tj
125
°C
PARAMETER
SYMBOL
Continuous Reverse Voltage
THERMAL RESISTANCE
VALUE
UNIT
R θJA
113
°C/W
R θJA
73
°C/W
PARAMETER
SYMBOL
Junction to Ambient (a)
Junction to Ambient (b)
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
ISSUE 2 - DECEMBER 2002
2
ZHCS2000
TYPICAL CHARACTERISTICS
+V
Negative Input Pulse
1nS Rise Time
12R5
To 50R
Scope
1nS
Rise Time
DUT
50R to 12R5
Pulse Transformer
t1
D = t1 / t2
12R5
t2
Reverse Recovery Time Circuit
Duty Cycle
ISSUE 2 - DECEMBER 2002
3
ZHCS2000
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
Reverse Breakdown
Voltage
V (BR)R
40
Forward Voltage
VF
290
340
380
420
485
420
Reverse Current
IR
160
Diode Capacitance
CD
Reverse Recovery
Time
t rr
MAX.
UNIT CONDITIONS.
V
I R =1mA
325
385
445
500
615
mV
mV
mV
mV
mV
mV
I F =500mA*
I F =1000mA*
I F =1500mA*
I F =2000mA*
I F =3000mA*
I F =2000mA*,T amb=100°C*
300
µA
V R =30V
50
pF
f=1MHz,V R =25V
5.5
ns
switched from
IF = 500mA to I R = 500mA
Measured at IR = 50mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
ISSUE 2 - DECEMBER 2002
4
ZHCS2000
TYPICAL CHARACTERISTICS
ISSUE 2 - DECEMBER 2002
5
ZHCS2000
ISSUE 2 - DECEMBER 2002
6
ZHCS2000
ISSUE 2 - DECEMBER 2002
7
ZHCS2000
PACKAGE DIMENSIONS
PAD LAYOUT DETAILS
e
b
L 2
E1
E
DATUM A
a
e1
D
C
A
A2
A1
DIM Millimetres
Inches
Min
Max
Min
Max
A
0.90
1.45
0.35
0.057
A1
0.00
0.15
0
0.006
A2
0.90
1.30
0.035
0.051
b
0.35
0.50
0.014
0.019
C
0.09
0.20
0.0035
0.008
D
2.80
3.00
0.110
0.118
E
2.60
3.00
0.102
0.118
E1
1.50
1.75
0.059
0.069
L
0.10
0.60
0.004
0.002
e
0.95 REF
0.037 REF
e1
1.90 REF
0.074 REF
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (631) 543-7100
Fax: (631) 864-7630
Zetex (Asia) Ltd.
3701-04 Metroplaza, Tower 1
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
© Zetex plc 2000
www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves
the right to alter without notice the specification, design, price or conditions of supply of any product or service.
ISSUE 2 - DECEMBER 2002
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