SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” ISSUE 1- September 1997 ZHCS500 ✪ FEATURES: • Low V F • High Current Capability 1 C 2 1 APPLICATIONS: • DC - DC converters • Mobile telecomms • PCMCIA PARTMARK DETAIL: ZS5 A 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Continuous Reverse Voltage VR 40 V Forward Current (Continuous) IF 500 mA Forward Voltage @ IF = 500mA VF 550 mV Average Peak Forward Current; D.C. = 50% IFAV 1000 mA Non Repetitive Forward Current t≤100µs t≤10ms IFSM 6.75 3 A A Power Dissipation at Tamb= 25° C Ptot 330 mW Storage Temperature Range Tstg -55 to + 150 °C Junction Temperature Tj 125 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Reverse Breakdown Voltage V (BR)R 40 60 V IR= 200µA Forward Voltage VF 270 300 370 465 550 640 810 440 300 350 460 550 670 780 1050 mV mV mV mV mV mV mV mV IF= IF= IF= IF= IF= IF= IF= IF= Reverse Current IR 15 40 µA V R= 30V Diode Capacitance CD 20 pF f= 1MHz,V R= 25V Reverse Recovery Time trr 10 ns switched from IF = 500mA to IR = 500mA Measured at IR = 50mA *Measured under pulsed conditions. Pulse width= 300µs; duty cycle ≤2% . 50mA* 100mA* 250mA* 500mA* 750mA* 1000mA* 1500mA* 500mA, Tamb= 100° C* ZHCS500 TYPICAL CHARACTERISTICS 100m IR - Reverse Current (A) IF - Forward Current (A) 1 100m 10m 1m +125°C +25°C -55°C 0 0.1 0.2 0.3 0.4 10m +100°C 100u +50°C 10u +25°C 1u 100n 10n 1n 0.5 +125°C 1m -55°C 0 10 VF - Forward Voltage (V) IF v VF D=0.5 1 D=t 1/t t 0.4 p I F(pk) p I F(av) =DxI PF(av) =I D=0.2 PF(av) - Avg Pwr Diss (W) IF(av) - Avg Fwd Cur (A) t DC F(av) F(pk) xV F D=0.1 D=0.05 0 Tj=125°C 0.2 t 105 110 115 120 1 D=t 1/t p I F(pk) 0.1 125 t DC DC=0.5 DC=0.2 DC=0.1 DC=0.05 0 TC - Case Temperature (°C) IF(av) v TC 0.1 0.2 0.3 p I F(av) =DxI PF(av) =I 0.4 F(av) 0.5 F(pk) xV F 0.6 IF(av) - Avg Fwd Curr (A) PF(av) v IF(av) 90 CD - Diode Capacitance (pF) 125 Ta - Ambient Temp (°C) 40 0.3 0 100 Rth=100° C/W Rth=200°C/W Rth=300°C/W 95 65 30 0.4 0.6 0.2 20 VR - Reverse Voltage (V) IR v VR 1 10 VR - Reverse Voltage (V) Ta v VR 100 50 0 0 10 20 30 VR - Reverse Voltage (V) CD v VR 40 ZHCS500 TYPICAL CHARACTERISTICS 300 RTHj-a (°C/W) D=1 t p 1 D=t 1/t t 200 p D=0.5 100 Single Pulse D=0.2 D=0.1 D=0.05 0 100u 1m 10m 100m 1 Pulse Width (s) 10 100