GXELECTRONICS ZQ5000

星合电子
ZQ5000 THRU ZQ5010
XINGHE ELECTRONICS
特性:FEATURES
BLOCK
◆大电流承受能力.High current capability
◆低成本.Low cost
.
◆扩散烧结. Diffused junction
◆正向压降低.Low forward voltage drop
◆低漏电. Low leakage current
◆高浪涌承受能力.High surge current capability
◆35A 工作在表面温度是125℃,无热损耗的情况下.
35Ampere Operation At TL=125℃ With No Thermal Runaway
机械性能:MECHANICAL DATA
Dimension in millimeters
极限值和电参数
TA= 25℃除非另有规定. 单相,正半弦波,60HZ,阻抗或电感负载.为电容装载,减少电流的 20%
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ Ambient temp. Unless otherwise specified.Single phase, half sine wave, 60HZ,resistive or inductive load.
型
号 TYPE
最大峰值反向电压
Maximum Current Peak Reverse Voltage
最大反向有效值电压
Working Peak Reverse Voltage
最大直流截止电压
Maximum DC Blocking Voltage
最大正向平均整流电流Ta=100℃,
Maximum Average Forward Rectified Current
符 号
ZQ5000
ZQ5001
ZQ5002
ZQ5004
ZQ5006
ZQ5008
ZQ5010
单 位
VRRM
50
100
200
400
600
800
1000
V
VRMS
35
70
140
280
420
560
700
V
VDC
50
100
200
400
600
800
1000
V
IF(AV)
50
A
IFSM
500
A
VF
1.03
V
峰值正向浪涌电流
Peak Forward Surge Current 8.3ms Single
Sine-wave on Rated Load (JEDEC Method)
最大瞬间正向压降@100A
Maximum Instantaneous Forward Voltage
Drop at 100A DC
最大反向直流电流
Maximum DC Reverse Current Ta = 25℃
1.0
IR
典型结电容
Typical Junction Capacitance (NOTE 1)
工作及储存温度范围
Operating AND Storage Temperature Range
注
μA
200
at Rated DCBlocking Voltage Ta = 150℃
CJ
140
pF
TJ,TSTG
-55~+150
℃
释 : NOTE 在 1MHz 下测量,施加 4.0V D.C 的反向电压. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
1
GAOMI XINGHE ELECTRONICSCO.,LTD. WWW.SDDZG.COM TEL:0536-2210359 QQ:464768017
星合电子
ZQ5000 THRU ZQ5010
XINGHE ELECTRONICS
FIG. 1 –最大正向平均电流降额
FIG. 2 –最大非重复正向浪涌电流
FIG. 1 –MAXIMUM AVERAGE FORWARD CURRENT
FIG. 2 –MAXIMUM NON-REPETITIVE
DERATING
FORWARD SURGE CURRENT
FIG. 4–正向特性曲线(典型)
FIG. 3 –反向特性曲线(典型)
FIG. 3 – TYPICA REVERSE CHARACTERISTICS.
FIG.4 – TYPICA FORWARD
CHARACTERISTICS
FIG. 5 –典型结电容
FIG. 5 – TYPICAL JUNCTION CAPACITANCE
2
GAOMI XINGHE ELECTRONICSCO.,LTD. WWW.SDDZG.COM TEL:0536-2210359 QQ:464768017