ZTE1.5 thru ZTE5.1 Vishay Semiconductors formerly General Semiconductor Voltage Stabilizers Features min. 1.083 (27.5) • Silicon Stabilizer Diodes • Monolithic integrated analog circuits designed for small power stabilizer and limitation circuits, providing low dynamic resistance and high-quality stabilization performance as well as low noise. In the reverse direction, these devices show the behavior of forward-biased silicon diodes. • The end of the ZTE device marked with the cathode ring is to be connected: ZTE1.5 and ZTE2 to the negative pole of the supply voltage; ZTE2.4 thru ZTE5.1 to the positive pole of the supply voltage. • These diodes are also available in MiniMELF case with the type designation LL1.5 … LL 5.1. max. ∅.079 (2.0) Cathode Mark min. 1.083 (27.5) max. .150 (3.8) DO-204AH (DO-35 Glass) Maximum Ratings Mechanical Data Dimensions are in inches and (millimeters) Case: DO-35 Glass Case Weight: approx. 0.13g Packaging codes/options: D7/10K per 13” reel (52mm tape), 20K/box D8/10K per Ammo tape, (52mm tape), 20K/box max. ∅.020 (0.52) (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit IF 100 mA Power dissipation at Tamb = 25°C Ptot 300(1) mW Junction temperature TJ 150 °C Storage temperature range TS – 55 to +150 °C Operating Current (see Table “Characteristics”) Inverse Current Electrical and Thermal Characteristics Parameter (TA = 25°C unless otherwise noted) Symbol Min. Typ. Max. Forward Voltage at IF = 10 mA VF – – 1.1 V Temperature Coefficient of the stabilized voltage at IZ = 5 mA αVZ αVZ – – –26 –34 – – –4 10 /°C 10–4/°C RθJA – – 400(1) °C/W ZTE1.5, ZTE2 ZTE2.4, ZTE5.1 Thermal resistance junction to ambient air Document Number 88425 02-May-02 Unit www.vishay.com 1 ZTE1.5 thru ZTE5.1 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (TA = 25°C unless otherwise noted) Operating Voltage at IZ = 5mA(2) VZ (Ω) Dynamic resistance at IZ = 5mA rzj (Ω) Permissable operating current at Tamb = 25°C (1) IZ max. (mA) 1.35 ... 1.55 13(<20) 120 ZTE2 2.0 ... 2.3 18(<30) 120 ZTE2.4 2.2 ... 2.56 14(<20) 120 ZTE2.7 2.5 ... 2.9 15(<20) 105 ZTE3 2.8 ... 3.2 15(<20) 95 ZTE3.3 3.1 ... 3.5 16(<20) 90 ZTE3.6 3.4 ... 3.8 16(<25) 80 ZTE3.9 3.7 ... 4.1 17(<25) 75 ZTE4.3 4.0 ... 4.6 17(<25) 65 ZTE4.7 4.4 ... 5.0 18(<25) 60 ZTE5.1 4.8 ... 5.4 18(<25) 55 Type ZTE1.5 Notes: (1) Valid provided that electrodes are kept at ambient temperature at a distance of 8mm from case (2) Tested with pulses tp = 5ms www.vishay.com 2 Document Number 88425 02-May-02 ZTE1.5 thru ZTE5.1 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) ZTE1.5 ... 5.1 ZTE1.5 ZTE2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 ZTE1.5 ... 5.1x ZTE1.5 Document Number 88425 02-May-02 ZTE2 2.4 2.7 3 3.3 3.6 3.9 4.3 4.7 5.1 www.vishay.com 3 ZTE1.5 thru ZTE5.1 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) ZTE 1.5 ... 5.1 ZTE1.5 ... 5.1 ZTE 5.1 4.3 3.6 3 www.vishay.com 4 Document Number 88425 02-May-02