DIODES ZTX1051A

NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ZTX1051A
t1
140
D=t1
tp
D=0.2
D=0.05
40
Single Pulse
20
0
0.1ms
1ms
10ms
100ms
1s
10s
re
tu
D=0.1
0.50
C
B
0.25
100s
-40
0
40
80
120
160
E
E-Line
TO92 Compatible
ra
pe
80
60
m
te
D=0.5
0.75
t
en
bi
tp
120
Am
Max Power Dissipation - (Watts)
D=1(D.C)
160
100
ISSUE 3 – FEBRUARY 95
FEATURES
* BCEV=150V
* Very Low Saturation Voltage
* High Gain
* Inherently Low Noise
APPLICATIONS
* Emergency Lighting
* Low Noise Audio
1.0
180
ZTX1051A
ABSOLUTE MAXIMUM RATINGS.
200
PARAMETER
SYMBOL
VALUE
UNIT
Pulse Width
T -Temperature (°C)
Collector-Base Voltage
VCBO
150
V
Transient Thermal Resistance
Derating curve
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
10
A
SPICE PARAMETERS
*ZETEX ZTX1051A Spice model Last revision 16/12/94
*
.MODEL ZTX1051A NPN IS=1.35E-12 NF=1.0 BF=600 IKF=5.0 VAF=120
Continuous Collector Current
IC
4
A
Base Current
IB
500
mA
+
ISE=0.6E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15
Power Dissipation at Tamb=25°C
Ptot
1
W
+
+
ISC=1.0E-10 NC=1.7 RB=0.1 RE=0.023 RC=0.010
CJC=90.36E-12 CJE=547.5E-12 MJC=0.385 MJE=0.357
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +200
°C
+
VJC=0.5 VJE=0.741 TF=600E-12 TR=8E-9
*
 1995 ZETEX PLC
The copyright in this model and the design embodied belong to Zetex PLC (“Zetex”). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given and
no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Facsimile: (44)161-627 5467
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
87 Modular Avenue
Commack NY11725
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road, Kwai Fong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
Zetex plc 1995

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
ZTX1051A
ZTX1051A
TYPICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
150
190
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCES
150
190
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO
40
60
V
IC=10mA
Collector-Emitter
Breakdown Voltage
VCEV
150
190
V
IC=100µA, VEB=1V
Emitter-Base Breakdown
Voltage
V(BR)EBO
5
8.8
V
IE=100µA
Collector Cut-Off Current
ICBO
0.3
10
nA
VCB=120V
Emitter Cut-Off Current
IEBO
0.3
10
nA
VEB=4V
Collector Emitter Cut-Off
Current
ICES
0.3
10
nA
VCES=120V
IC/IB=100
0.6
IC/IB=20
IC/IB=40
IC/IB=100
0.4
0.4
0.2
-55°C
+25°C
+100°C
+175°C
0.2
1mA
10mA 100mA
1A
10A
1mA
10mA 100mA
IC-Collector Current
1.2
25
110
210
mV
mV
mV
IC=0.2A, IB=10mA*
IC=1A, IB=10mA*
IC=4A, IB=100mA*
400
100
VBE(sat)
920
1000
mV
IC=4A, IB=100mA*
Base-Emitter Turn-On
Voltage
VBE(on)
825
950
mV
IC=4A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE
Transition Frequency
fT
IC/IB=100
1.0
+100°C
0.8
500
17
75
165
+25°C
0.6
300
0.4
-55°C
200
440
450
310
70
1mA
10mA 100mA
155
Cobo
27
ton
100
toff
300
MHz
40
IC=50mA, VCE=10V
f=100MHz
pF
VCB=10V, f=1MHz
ns
IC=4A, IB=40mA, VCC=10V
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
IC=4A, IB=±40mA, VCC=10V
+25°C
+100°C
+175°C
1A
1mA
10A
10mA 100mA
1.0
0.6
0.4
10A
VBE(sat) v Ic
10
VCE=2V
0.8
1A
IC-Collector Current
hFE v IC
IC=10mA, VCE=2V*
IC=1A, VCE=2V*
IC=4A, VCE=2V*
IC=10A, VCE=2V*
1200
-55°C
0.2
IC-Collector Current
290
300
190
45
10A
VCE(sat) v IC
700 VCE=2V
600
1A
IC-Collector Current
VCE(sat) v IC
Base-Emitter
Saturation Voltage
Switching Times
0.8
+25°C
0.6
Collector-Emitter Saturation VCE(sat)
Voltage
Output Capacitance
0.8
-55°C
1
+25°C
+100°C
Single Pulse Test Tamb=25C
DC
1s
100ms
10ms
1ms
100us
0.1
+175°C
0.2
1mA
10mA 100mA
1A
10A
0.01
100mV
1V
10V
IC-Collector Current
VCE - Collector Voltage
VBE(on) v IC
Safe Operating Area
100V
ZTX1051A
ZTX1051A
TYPICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
150
190
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCES
150
190
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO
40
60
V
IC=10mA
Collector-Emitter
Breakdown Voltage
VCEV
150
190
V
IC=100µA, VEB=1V
Emitter-Base Breakdown
Voltage
V(BR)EBO
5
8.8
V
IE=100µA
Collector Cut-Off Current
ICBO
0.3
10
nA
VCB=120V
Emitter Cut-Off Current
IEBO
0.3
10
nA
VEB=4V
Collector Emitter Cut-Off
Current
ICES
0.3
10
nA
VCES=120V
IC/IB=100
0.6
IC/IB=20
IC/IB=40
IC/IB=100
0.4
0.4
0.2
-55°C
+25°C
+100°C
+175°C
0.2
1mA
10mA 100mA
1A
10A
1mA
10mA 100mA
IC-Collector Current
1.2
25
110
210
mV
mV
mV
IC=0.2A, IB=10mA*
IC=1A, IB=10mA*
IC=4A, IB=100mA*
400
100
VBE(sat)
920
1000
mV
IC=4A, IB=100mA*
Base-Emitter Turn-On
Voltage
VBE(on)
825
950
mV
IC=4A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE
Transition Frequency
fT
IC/IB=100
1.0
+100°C
0.8
500
17
75
165
+25°C
0.6
300
0.4
-55°C
200
440
450
310
70
1mA
10mA 100mA
155
Cobo
27
ton
100
toff
300
MHz
40
IC=50mA, VCE=10V
f=100MHz
pF
VCB=10V, f=1MHz
ns
IC=4A, IB=40mA, VCC=10V
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
IC=4A, IB=±40mA, VCC=10V
+25°C
+100°C
+175°C
1A
1mA
10A
10mA 100mA
1.0
0.6
0.4
10A
VBE(sat) v Ic
10
VCE=2V
0.8
1A
IC-Collector Current
hFE v IC
IC=10mA, VCE=2V*
IC=1A, VCE=2V*
IC=4A, VCE=2V*
IC=10A, VCE=2V*
1200
-55°C
0.2
IC-Collector Current
290
300
190
45
10A
VCE(sat) v IC
700 VCE=2V
600
1A
IC-Collector Current
VCE(sat) v IC
Base-Emitter
Saturation Voltage
Switching Times
0.8
+25°C
0.6
Collector-Emitter Saturation VCE(sat)
Voltage
Output Capacitance
0.8
-55°C
1
+25°C
+100°C
Single Pulse Test Tamb=25C
DC
1s
100ms
10ms
1ms
100us
0.1
+175°C
0.2
1mA
10mA 100mA
1A
10A
0.01
100mV
1V
10V
IC-Collector Current
VCE - Collector Voltage
VBE(on) v IC
Safe Operating Area
100V
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ZTX1051A
t1
140
D=t1
tp
D=0.2
D=0.05
40
Single Pulse
20
0
0.1ms
1ms
10ms
100ms
1s
10s
re
tu
D=0.1
0.50
C
B
0.25
100s
-40
0
40
80
120
160
E
E-Line
TO92 Compatible
ra
pe
80
60
m
te
D=0.5
0.75
t
en
bi
tp
120
Am
Max Power Dissipation - (Watts)
D=1(D.C)
160
100
ISSUE 3 – FEBRUARY 95
FEATURES
* BCEV=150V
* Very Low Saturation Voltage
* High Gain
* Inherently Low Noise
APPLICATIONS
* Emergency Lighting
* Low Noise Audio
1.0
180
ZTX1051A
ABSOLUTE MAXIMUM RATINGS.
200
PARAMETER
SYMBOL
VALUE
UNIT
Pulse Width
T -Temperature (°C)
Collector-Base Voltage
VCBO
150
V
Transient Thermal Resistance
Derating curve
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
10
A
SPICE PARAMETERS
*ZETEX ZTX1051A Spice model Last revision 16/12/94
*
.MODEL ZTX1051A NPN IS=1.35E-12 NF=1.0 BF=600 IKF=5.0 VAF=120
Continuous Collector Current
IC
4
A
Base Current
IB
500
mA
+
ISE=0.6E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15
Power Dissipation at Tamb=25°C
Ptot
1
W
+
+
ISC=1.0E-10 NC=1.7 RB=0.1 RE=0.023 RC=0.010
CJC=90.36E-12 CJE=547.5E-12 MJC=0.385 MJE=0.357
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +200
°C
+
VJC=0.5 VJE=0.741 TF=600E-12 TR=8E-9
*
 1995 ZETEX PLC
The copyright in this model and the design embodied belong to Zetex PLC (“Zetex”). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given and
no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Facsimile: (44)161-627 5467
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
87 Modular Avenue
Commack NY11725
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road, Kwai Fong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
Zetex plc 1995

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.