NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ZTX649 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Output Capacitance Cobo 25 50 pF VCB=10V f=1MHz Switching Times ton 55 ns toff 300 ns IC=500mA, VCC=10V IB1=IB2=50mA *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% SYMBOL MAX. UNIT 175 116 70 °C/W °C/W °C/W Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case C B Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. THERMAL CHARACTERISTICS PARAMETER ZTX649 ISSUE 2 APRIL 94 FEATURES * 25 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt APPLICATIONS * Motor driver * DC-DC converters PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 6 A Continuous Collector Current IC 2 A Power Dissipation at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 200 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) 2.5 2.0 C 1.5 Am 1.0 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 D=1 (D.C.) t1 D=t1/tP tP 100 D=0.5 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-217 PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. 35 V IC=100µ A V(BR)CEO 25 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A Collector Cut-Off Current ICBO 0.1 10 µA µA VCB=30V VCB=30V,T amb =100°C Emitter Cut-Off Current IEBO 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.12 0.23 0.3 0.5 V V IC=1A, IB=100mA* IC=2A, IB=200mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 1.25 V IC=1A, IB=100mA* Base-Emitter Turn-On Voltage VBE(on) 0.8 1 V IC=1A, VCE=2V* Static Forward Current Transfer Ratio hFE 70 100 75 15 200 200 150 50 Transition Frequency fT 150 240 3-216 IC=50mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* 300 MHz IC=100mA, VCE=5V f=100MHz NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ZTX649 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Output Capacitance Cobo 25 50 pF VCB=10V f=1MHz Switching Times ton 55 ns toff 300 ns IC=500mA, VCC=10V IB1=IB2=50mA *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% SYMBOL MAX. UNIT 175 116 70 °C/W °C/W °C/W Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case C B Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. THERMAL CHARACTERISTICS PARAMETER ZTX649 ISSUE 2 APRIL 94 FEATURES * 25 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt APPLICATIONS * Motor driver * DC-DC converters PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 6 A Continuous Collector Current IC 2 A Power Dissipation at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 200 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) 2.5 2.0 C 1.5 Am 1.0 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 D=1 (D.C.) t1 D=t1/tP tP 100 D=0.5 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-217 PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. 35 V IC=100µ A V(BR)CEO 25 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A Collector Cut-Off Current ICBO 0.1 10 µA µA VCB=30V VCB=30V,T amb =100°C Emitter Cut-Off Current IEBO 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.12 0.23 0.3 0.5 V V IC=1A, IB=100mA* IC=2A, IB=200mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 1.25 V IC=1A, IB=100mA* Base-Emitter Turn-On Voltage VBE(on) 0.8 1 V IC=1A, VCE=2V* Static Forward Current Transfer Ratio hFE 70 100 75 15 200 200 150 50 Transition Frequency fT 150 240 3-216 IC=50mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* 300 MHz IC=100mA, VCE=5V f=100MHz ZTX649 TYPICAL CHARACTERISTICS 220 200 0.8 hFE - Gain VCE(sat) - (Volts) 180 0.6 IC/IB=10 0.4 VCE=2V 160 140 120 100 80 0.2 60 40 0 0.01 0.1 1 10 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 2.2 10 1.4 2.0 1.2 1.6 VBE - (Volts) VBE(sat) - (Volts) 1.8 1.4 1.2 IC/IB=10 1.0 1.0 VCE=2V 0.8 0.8 0.6 0.6 0.4 0.01 1 10 0.0001 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 10 Single Pulse Test at Tamb=25°C 10 td tr tf ns IB1=IB2=IC/10 140 0.1 td 120 1.0 Switching time IC - Collector Current (Amps) 0.1 D.C. 1s 100ms 10ms 1.0ms 100 80 60 ts ns 1000 tr 800 tf 600 ts 40 400 20 0 0.01 0.01 1 10 100 200 0 0.1 1000 VCE - Collector Voltage (Volts) IC - Collector Current (Amps) Safe Operating Area Switching Speeds 3-218 1