NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX658 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Transition Frequency f T TYP. MAX. 50 Output capcitance C obo Switching times t on t off 10 130 3300 CONDITIONS. MHz I C=20mA, V CE=20V f=20MHz pF V CB=20V, f=1MHz APPLICATIONS * Telephone dialler circuits ns ns I C=100mA, V C=100V I B1=10mA, I B2=-20mA ABSOLUTE MAXIMUM RATINGS. THERMAL CHARACTERISTICS PARAMETER SYMBOL Thermal Resistance:Junction to Ambient 1 Junction to Ambient 2 Junction to Case MAX. UNIT °C/W °C/W °C/W 175 116 70 R th(j-amb)1 R th(j-amb)2 † R th(j-case) Thermal Resistance (°C/W) Max Power Dissipation - (Watts) C 1.5 Am 1.0 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 VALUE UNIT V CBO 400 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage V EBO 5 V Peak Pulse Current I CM 1 A Continuous Collector Current IC 500 mA Power Dissipation at T amb=25°C derate above 25°C P tot 1 5.7 W mW/ °C Operating and Storage Temperature Range T j:T stg -55 to +200 °C UNIT CONDITIONS. 400 V I C=100 µ A Collector-Emitter Breakdown Voltage V (BR)CEO) 400 V I C=10mA* Emitter-Base Breakdown Voltage V (BR)EBO 5 V I E=100 µ A Collector Cut-Off Current I CBO 100 nA V CB=320V D=0.5 Collector Cut-Off Current I CBO 100 nA V CE=320V D=0.2 Emitter Cut-Off Current I EBO 100 nA V EB=4V Collector-Emitter Saturation Voltage V CE(sat) 0.3 0.25 0.5 V V V I C=20mA, I B=1mA I C=50mA, I B=5mA* I C=100mA, I B=10mA* Base-Emitter Saturation Voltage V BE(sat) 0.9 V I C=100mA, I B=10mA* Base-Emitter Turn On Voltage V BE(on) 0.9 V IC=100mA, V CE=5V* Static Forward Current Transfer Ratio h FE D=t1/tP Single Pulse 0.001 0.01 0.1 1 10 TYP. 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-230 SYMBOL Collector-Base Voltage SYMBOL MIN. D=0.1 0 0.0001 PARAMETER V (BR)CBO tP 100 E-Line TO92 Compatible Collector-Base Breakdown Voltage D=1 (D.C.) t1 E PARAMETER 200 2.0 C B ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). † Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 2.5 ISSUE 2 – APRIL 2002 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt UNIT * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% ZTX658 50 50 40 MAX. I C=1mA, V CE=5V* I C=100mA, V CE=5V* I C=200mA, V CE=10V* 3-229 NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX658 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Transition Frequency f T TYP. MAX. 50 Output capcitance C obo Switching times t on t off 10 130 3300 CONDITIONS. MHz I C=20mA, V CE=20V f=20MHz pF V CB=20V, f=1MHz APPLICATIONS * Telephone dialler circuits ns ns I C=100mA, V C=100V I B1=10mA, I B2=-20mA ABSOLUTE MAXIMUM RATINGS. THERMAL CHARACTERISTICS PARAMETER SYMBOL Thermal Resistance:Junction to Ambient 1 Junction to Ambient 2 Junction to Case MAX. UNIT °C/W °C/W °C/W 175 116 70 R th(j-amb)1 R th(j-amb)2 † R th(j-case) Thermal Resistance (°C/W) Max Power Dissipation - (Watts) C 1.5 Am 1.0 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 VALUE UNIT V CBO 400 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage V EBO 5 V Peak Pulse Current I CM 1 A Continuous Collector Current IC 500 mA Power Dissipation at T amb=25°C derate above 25°C P tot 1 5.7 W mW/ °C Operating and Storage Temperature Range T j:T stg -55 to +200 °C UNIT CONDITIONS. 400 V I C=100 µ A Collector-Emitter Breakdown Voltage V (BR)CEO) 400 V I C=10mA* Emitter-Base Breakdown Voltage V (BR)EBO 5 V I E=100 µ A Collector Cut-Off Current I CBO 100 nA V CB=320V D=0.5 Collector Cut-Off Current I CBO 100 nA V CE=320V D=0.2 Emitter Cut-Off Current I EBO 100 nA V EB=4V Collector-Emitter Saturation Voltage V CE(sat) 0.3 0.25 0.5 V V V I C=20mA, I B=1mA I C=50mA, I B=5mA* I C=100mA, I B=10mA* Base-Emitter Saturation Voltage V BE(sat) 0.9 V I C=100mA, I B=10mA* Base-Emitter Turn On Voltage V BE(on) 0.9 V IC=100mA, V CE=5V* Static Forward Current Transfer Ratio h FE D=t1/tP Single Pulse 0.001 0.01 0.1 1 10 TYP. 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-230 SYMBOL Collector-Base Voltage SYMBOL MIN. D=0.1 0 0.0001 PARAMETER V (BR)CBO tP 100 E-Line TO92 Compatible Collector-Base Breakdown Voltage D=1 (D.C.) t1 E PARAMETER 200 2.0 C B ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). † Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 2.5 ISSUE 2 – APRIL 2002 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt UNIT * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% ZTX658 50 50 40 MAX. I C=1mA, V CE=5V* I C=100mA, V CE=5V* I C=200mA, V CE=10V* 3-229 ZTX658 TYPICAL CHARACTERISTICS 1.4 IC/IB=10 IC/IB=20 IC/IB=50 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 1.4 0.01 0.1 1 10 1.0 0.8 0.6 0.4 +100°C +25°C -55°C -55°C +25°C +100°C +175°C VCE=10V 1.6 300 200 100 0.4 1.4 0.2 20 IC/IB=10 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 0 0.001 10 20 1 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC IC - Collector Current (Amps) -55°C +25°C +100°C +175°C VCE=10V 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 1 10 20 0.1 0.01 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0.001 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-231 10 Single Pulse Test at Tamb=25°C 1.0 VBE - (Volts) 10 VCE(sat) v IC 0.6 0 0.001 1 VCE(sat) v IC 0.8 1.4 0.1 IC - Collector Current (Amps) 1.0 1.6 0.01 IC - Collector Current (Amps) 1.2 0 0.001 1.2 0 0.001 20 VBE(sat) - (Volts) hFE - Normalised Gain 1.6 IC/IB=10 0.2 hFE - Typical gain 0 0.001 -55°C +25°C +100°C +175°C Tamb=25°C VCE(sat) - (Volts) VCE(sat) - (Volts) 1.6 1000 20