NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX688B ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. Transition Frequency fT 150 Input Capacitance Cibo Output Capacitance Switching Times TYP. MAX. UNIT CONDITIONS. MHz IC=50mA, VCE=5V f=50MHz 200 pF VEB=0.5V, f=1MHz Cobo 40 pF VCB=10V, f=1MHz ton toff 40 500 ns ns IC=500mA, IB1=50mA IB2=50mA, VCC=10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case UNIT °C/W °C/W °C/W 175 116 70 C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO 12 Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 10 A Continuous Collector Current IC 3 A Practical Power Dissipation* Ptotp 1.5 W Ptot 1 5.7 W mW/°C -55 to +200 °C Power Dissipation Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. ZTX688B ISSUE 2 MAY 94 FEATURES * 12 Volt VCEO * Gain of 400 at IC=3 Amps * Very low saturation voltage APPLICATIONS * Darlington replacement * Flash gun convertors * Battery powered circuits * Motor drivers at Tamb=25°C derate above 25°C Tj:Tstg Operating and Storage Temperature Range *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 200 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) 2.5 2.0 C 1.5 Am 1.0 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 D=1 (D.C.) t1 D=t1/tP tP 100 D=0.5 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-233 PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 12 TYP. MAX. V IC=100µA Collector-Emitter Breakdown Voltage V(BR)CEO 12 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µA Collector Cut-Off Current ICBO 0.1 µA VCB=10V Emitter Cut-Off Current IEBO 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.04 0.06 0.18 0.35 V V V V IC=0.1A, IB=1mA IC=0.1A, IB=0.5mA* IC=1A, IB=50mA* IC=3A, IB=20mA* Base-Emitter Saturation Voltage VBE(sat) 1.1 V IC=3A, IB=20mA* Base-Emitter Turn-On Voltage VBE(on) 1 V IC=3A, VCE=2V* Static Forward Current Transfer Ratio hFE 500 400 100 3-232 IC=0.1A, VCE=2V* IC=3A, VCE=2V* IC=10A, VCE=2V* NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX688B ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. Transition Frequency fT 150 Input Capacitance Cibo Output Capacitance Switching Times TYP. MAX. UNIT CONDITIONS. MHz IC=50mA, VCE=5V f=50MHz 200 pF VEB=0.5V, f=1MHz Cobo 40 pF VCB=10V, f=1MHz ton toff 40 500 ns ns IC=500mA, IB1=50mA IB2=50mA, VCC=10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case UNIT °C/W °C/W °C/W 175 116 70 C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO 12 Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 10 A Continuous Collector Current IC 3 A Practical Power Dissipation* Ptotp 1.5 W Ptot 1 5.7 W mW/°C -55 to +200 °C Power Dissipation Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. ZTX688B ISSUE 2 MAY 94 FEATURES * 12 Volt VCEO * Gain of 400 at IC=3 Amps * Very low saturation voltage APPLICATIONS * Darlington replacement * Flash gun convertors * Battery powered circuits * Motor drivers at Tamb=25°C derate above 25°C Tj:Tstg Operating and Storage Temperature Range *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 200 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) 2.5 2.0 C 1.5 Am 1.0 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 D=1 (D.C.) t1 D=t1/tP tP 100 D=0.5 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-233 PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 12 TYP. MAX. V IC=100µA Collector-Emitter Breakdown Voltage V(BR)CEO 12 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µA Collector Cut-Off Current ICBO 0.1 µA VCB=10V Emitter Cut-Off Current IEBO 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.04 0.06 0.18 0.35 V V V V IC=0.1A, IB=1mA IC=0.1A, IB=0.5mA* IC=1A, IB=50mA* IC=3A, IB=20mA* Base-Emitter Saturation Voltage VBE(sat) 1.1 V IC=3A, IB=20mA* Base-Emitter Turn-On Voltage VBE(on) 1 V IC=3A, VCE=2V* Static Forward Current Transfer Ratio hFE 500 400 100 3-232 IC=0.1A, VCE=2V* IC=3A, VCE=2V* IC=10A, VCE=2V* ZTX688B TYPICAL CHARACTERISTICS Tamb=25°C IC/IB=200 IC/IB=100 IC/IB=10 0.8 VCE(sat) - (Volts) VCE(sat) - (Volts) 0.8 0.6 0.4 0.2 0.01 0.1 1 0.4 0 10 0.1 1 10 VCE(sat) v IC VCE(sat) v IC VCE=2V 1.6 1.0 1K 0.8 0.6 500 0.4 0.2 VBE(sat) - (Volts) 1.5K 1.2 1.4 -55°C +25°C +100°C +175°C IC/IB=100 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.01 0.1 10 1 0 VBE(sat) v IC -55°C +25°C +100°C +175°C VCE=2V 1.4 1.0 0.8 0.6 0.4 0.2 0 1 hFE v IC 1.2 0 0.1 IC - Collector Current (Amps) IC - Collector Current (Amps) 1.6 0.01 IC - Collector Current (Amps) 10 VBE - (Volts) 0.01 IC - Collector Current (Amps) hFE - Typical Gain hFE - Normalised Gain 0.6 IC - Collector Current (Amps) +100°C +25°C -55°C 1.4 IC/IB=100 0.2 0 1.6 -55°C +25°C +100°C +175°C 0.01 0.1 1 Single Pulse Test at Tamb=25°C 1 0.1 0.01 0.1 10 D.C. 1s 100ms 10ms 1.0ms 0.1ms 1 10 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-234 10 100