DIODES ZTX718

PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ZTX718
ISSUE 4– MAY 1998
FEATURES
* 6A Peak pulse current
* Excellent hFE characteristics up to 6A (pulsed)
* low saturation voltage
* IC Cont 2.5A
APPLICATIONS
* Power MOSFET gate driver in conjunction with
complementary ZTX618
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V CBO
-20
V
Collector-Emitter Voltage
V CEO
-20
V
Emitter-Base Voltage
V EBO
-5
V
Peak Pulse Current
I CM
-6
A
Continuous Collector Current
IC
-2.5
A
Base Current
IB
-500
mA
Practical Power Dissipation*
P totp
1.5
W
Power Dissipation at T amb=25°C
P tot
1
W
Operating and Storage Temperature Range
T j:T stg
-55 to +200
°C
* Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX718
ELECTRIAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base
Breakdown Voltage
V (BR)CBO
-20
Collector-Emitter
Breakdown Voltage
V (BR)CEO
Emitter-Base
Breakdown Voltage
V (BR)EBO
Collector Cut-Off
Current
I CBO
Emitter Cut-Off
Current
MAX.
UNIT
CONDITIONS.
-65
V
I C=-100µA
-20
-55
V
I C=-10mA*
-5
-8.8
V
I E=-100µA
-100
nA
V CB=-15V
I EBO
-100
nA
V EB=-4V
Collector Emitter
Cut-Off Current
I CES
-100
nA
V CES =-15V
Collector-Emitter
Saturation Voltage
V CE(sat)
-16
-130
-145
-190
-40
-200
-220
-260
mV
mV
mV
mV
I C=-0.1A, I B=-10mA*
I C=-1A, I B=-20mA*
I C=-1.5A, I B=-50mA*
I C=-2.5A, I B=-200mA*
Base-Emitter
Saturation Voltage
V BE(sat)
-0.98
-1.1
V
I C=-2.5A, I B=-200mA*
Base-Emitter Turn-On
Voltage
V BE(on)
-0.85
-0.95
V
I C =-2.5A, V CE=-2V*
Static Forward
Current Transfer
Ratio
h FE
300
300
150
35
15
475
450
230
70
30
Transition
Frequency
fT
150
180
Output Capacitance
C obo
21
Turn-On Time
t(on)
Turn-Off Time
t (off)
I C=-10mA, V CE=-2V*
I C=-100mA, V CE=-2V*
I C=-2A, V CE=-2V*
I C=-4A, V CE=-2V*
I C=-6A, V CE=-2V*
MHz
I C=-50mA, V CE=-10V
f=100MHz
pF
V CB=-10V, f=1MHz
40
ns
V CC=-10V, I C=-1A
I B1=I B2=20mA
670
ns
30
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ZTX718
TYPICAL CHARACTERISTICS
0.6
0.6
25°C
IC/IB=10
0.5
0.4
VCE(sat) - (V)
VCE(sat) - (V)
0.5
IC/IB=50
IC/IB=30
IC/IB=10
0.3
0.2
0.4
0.3
100°C
25°C
0.2
-55°C
0.1
0.1
0
0
10mA
1mA
100mA
1A
10A
10mA
1mA
IC-Collector Current
VCE=2V
1.4
1A
10A
IC/IB=10
1.2
VBE(sat) - (V)
Hfe - Typical Gain
10A
VCE(sat) v IC
25°C
450
225
1A
IC-Collector Current
VCE(sat) v IC
100°C
100mA
-55°C
1.0
-55°C
0.8
25°C
0.6
100°C
0.4
0.2
0
0
1mA
10mA
100mA
1A
10A
1mA
10mA
VBE(sat) v Ic
hFE v IC
10
VCE=2V
IC - Collector Current (A)
1.2
VBE(on) -(V)
1.0
-55°C
0.8
25°C
0.6
100°C
0.4
0.2
0
1mA
10mA
100mA
100mA
IC-Collector Current
IC-Collector Current
1A
10A
Single Pulse Test Tamb=25C
1
0.1
0.01
0.1V
DC
1s
100ms
10ms
1ms
100us
1V
10V
IC-Collector Current
VCE - Collector Voltage
VBE(on) v IC
Safe Operating Area
100V
ZTX718
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Thermal Resistance:
Junction to Ambient1
Junction to Ambient2
MAX.
UNIT
175
116
°C/W
°C/W
R th(j-amb)1
R th(j-amb)2 †
160
D=1(D.C.)
t1
140
120
D=t1
tP
D=0.5
80
40
D=0.2
D=0.1
D=0.05
Single Pulse
20
0
0.1ms
1ms
10ms
100ms
1s
10s
100s
0.75
0.50
e
ur
at
60
1.0
r
pe
m
te
100
tP
Max Power Dissipation - (Watts)
180
t
en
bi
Am
Transiant Thermal Resistance ( C/W)
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
0.25
-40
0
Pulse Width
40
80
120
160
200
T -Temperature (° C)
Transient Thermal Resistance
Derating curve
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
Zetex plc 1998
Internet:http://www.zetex.com
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