ZTX750 ZTX751 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER ZTX750 SYMBOL MIN. TYP. Transition Frequency fT Switching Times ton toff Output Capacitance 100 ZTX751 MAX MIN. TYP. . 140 100 UNIT CONDITIONS. MAX . 140 MHz IC=-100mA, VCE=-5V f=100MHz 40 40 ns 450 450 ns IC=-500mA, VCC=-10V IB1=IB2=-50mA pF VCB=10V f=1MHz 30 Cobo 30 THERMAL CHARACTERISTICS SYMBOL Rth(j-amb)1 Rth(j-amb)2 † Rth(j-case) Thermal Resistance:Junction to Ambient 1 Junction to Ambient2 Junction to Case MAX. UNIT 175 116 70 °C/W °C/W °C/W Thermal Resistance (°C/W) Max Power Dissipation - (Watts) 200 2.0 C 1.5 Am 1.0 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 D=1 (D.C.) t1 D=t1/tP tP 100 D=0.1 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance SYMBOL ZTX750 ZTX751 UNIT Collector-Base Voltage VCBO -60 -80 V Collector-Emitter Voltage VCEO -45 -60 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC -2 A Power Dissipation: at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ZTX750 PARAMETER SYMBOL Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current V(BR)CBO MIN. TYP. -60 V(BR)CEO -45 V(BR)EBO -5 Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Switching Times Output Capacitance 3-258 E-Line TO92 Compatible ICBO ZTX751 MAX. MIN. TYP. -80 MAX. IC=-100µA -60 V IC=-10mA -5 V IE=-100µA µA µA µA µA µA VCB=-45V VCB=-60V VCB=-45V,Tamb=100°C VCB=-60V,Tamb=100°C VEB=-4V -0.1 -0.1 IEBO -10 -0.1 -0.1 VCE(sat) UNIT CONDITIONS. V -10 D=0.2 0.001 E PARAMETER D=0.5 Single Pulse 0 0.0001 C B ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) † Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 2.5 ISSUE 3 – JULY 2005 FEATURES * 60 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot= 1 Watt ABSOLUTE MAXIMUM RATINGS *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ® 2% PARAMETER ZTX750 ZTX751 VBE(sat) -0.15 -0.3 -0.28 -0.5 -0.9 -1.25 -0.15 -0.3 V -0.28 -0.5 V -0.9 -1.25 V IC=-1A, IB=-100mA IC=-2A, IB=-200mA IC=-1A, IB=-100mA VBE(on) -0.8 -0.8 V IC=-1A, VCE=-2V pF IC=-50mA, VCE=-2V* IC=-500mA,VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=500mA, VCC=10V IB1=IB2=50mA VCB=10V f=1MHz hFE ton toff Cobo 70 100 80 40 200 200 170 80 45 800 -1 300 70 100 80 40 30 3-257 200 200 170 80 45 800 -1 300 30 ZTX750 ZTX751 ISSUE 2 JULY 94 FEATURES * 60 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot= 1 Watt ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL Transition Frequency fT Switching Times ton toff Output Capacitance ZTX750 MIN. TYP. 100 ZTX751 MAX. MIN. TYP. 140 100 MAX. UNIT CONDITIONS. 140 MHz IC=-100mA, VCE=-5V f=100MHz 40 40 ns 450 450 ns IC=-500mA, VCC=-10V IB1=IB2=-50mA 30 Cobo 30 pF VCB=10V f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. UNIT 175 116 70 °C/W °C/W °C/W Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case C B PARAMETER SYMBOL 2.0 C 1.5 Am 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 D=1 (D.C.) t1 D=t1/tP tP 100 D=0.5 D=0.2 D=0.1 0.001 0.01 0.1 1 10 UNIT V Collector-Base Voltage VCBO -60 -80 VCEO -45 -60 Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC -2 A Power Dissipation: at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C V ZTX750 ZTX751 PARAMETER SYMBOL Collector-Base Breakdown Voltage V(BR)CBO -60 -80 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -45 -60 V IC=-10mA Emitter-Base Breakdown Voltage V(BR)EBO -5 -5 V IE=-100µA Collector Cut-Off Current ICBO -10 µA µA µA µA VCB=-45V VCB=-60V VCB=-45V,Tamb=100°C -0.1 -0.1 µA VEB=-4V Collector-Emitter VCE(sat) Saturation Voltage -0.15 -0.3 -0.28 -0.5 -0.15 -0.3 -0.28 -0.5 V V IC=-1A, IB=-100mA IC=-2A, IB=-200mA Base-Emitter VBE(sat) Saturation Voltage -0.9 -0.9 -1.25 V IC=-1A, IB=-100mA MIN. TYP. MAX. MIN. TYP. -0.1 Pulse Width (seconds) Derating curve Maximum transient thermal impedance Emitter Cut-Off Current -10 IEBO -1.25 3-257 MAX. -0.1 100 T -Temperature (°C) 3-258 ZTX751 Collector-Emitter Voltage Single Pulse 0 0.0001 ZTX750 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 200 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) 2.5 E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 1.0 ZTX750 ZTX751 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS UNIT CONDITIONS. VCB=-60V,Tamb=100°C ZTX750 ZTX751 TYPICAL CHARACTERISTICS 0.6 td tr tf ns 140 0.4 IC/IB=10 Switching time VCE(sat) - (Volts) 0.5 0.3 0.2 0.1 0 0.0001 0.001 0.01 0.1 1 10 IB1=IB2=IC/10 ts ns 700 120 600 100 500 80 400 60 300 40 200 20 100 0 0 ts td tf tr 0.1 IC - Collector Current (Amps) 1 IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.4 1.2 VBE(sat) - (Volts) hFE - Gain 225 175 VCE=2V 125 75 1.0 IC/IB=10 0.8 0.6 0 0.01 0.1 1 10 0.0001 0.01 0.1 1 IC - Collector Current (Amps) hFE v IC VBE(sat) v IC IC - Collector Current (Amps) 1.2 1.0 VCE=2V 0.8 0.6 0.4 0.0001 0.001 0.01 0.1 1 10 Single Pulse Test at Tamb=25°C 10 VBE - (Volts) 0.001 IC - Collector Current (Amps) 1 0.1 D.C. 1s 100ms 10ms 1.0ms 100µs ZTX750 ZTX751 10 0.01 0.1 1 10 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-259 100