ZTX653DCSM ZTX753DCSM NPN/PNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICTIONS MECHANICAL DATA Dimensions in mm (inches) 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005) 1 4 4.32 ± 0.13 (0.170 ± 0.005) 3 2 0.64 ± 0.06 (0.025 ± 0.003) 2.54 ± 0.13 (0.10 ± 0.005) 2.29 ± 0.20 (0.09 ± 0.008) A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) FEATURES • DUAL SILICON PLANAR NPN/PNP TRANSISTORS A = 1.27 ± 0.13 (0.05 ± 0.005) • HERMETIC SURFACE MOUNT PACKAGE LCC2 PACKAGE Underside View ZTX653 • CECC SCREENING OPTIONS ZXT753 PAD 1 – Collector 1 PAD 3 – Base 2 PAD 2 – Base 1 PAD 4 – Collector 2 PAD 6 – Emitter 1 PAD 5 – Emitter 2 • SPACE QUALITY LEVEL OPTIONS ABSOLUTE MAXIMUM RATINGS PER SIDE (TC = 25°C unless otherwise stated) ZTX653 ZTX753 VCBO Collector – Base Voltage 120V -120V VCEO Collector – Emitter Voltage 100V -100V VEBO Emitter – Base Voltage 5V -5V ICM Peak Pulse Current * Limited package 2A -2A IC Continuous Collector Current 2A -2A PTOT Power Dissipation @ Tamb = 25°C Derate above 25°C TjTSTG Operating And Storage Temperature Range RθJ-A Junction - Ambient Thermal Resistance 1W 8mW/°C –55 to 150°C 125°C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 2836 Issue 1 ZTX653DCSM ZTX753DCSM ZTX653 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. V(BR)CBO Collector – Base Breakdown Voltage IC = 100µA 120 V(BR)CEO Collector – Emitter Breakdown Voltage IC = 10mA 100 V(BR)EBO Emitter – Base Breakdown Voltage ICBO Collector – Cut-off Current IEBO Emitter Cut-off Current IE = 100µA Max. Unit V 5 VCB = 100V 0.1 TC = 100°C 10 VEB = 4V IC = 500mA VCE(sat) Typ. 0.1 IB = 50mA* 0.2 0.3 Collector – Emitter Saturation Voltage IC = 1A IB = 100mA* 0.35 0.5 IC = 2A IB = 200mA* 0.8 1.0 VBE(sat) Base – Emitter Saturation Voltage IC = 1A IB = 100mA* 1.0 1.3 VBE(on) Base – Emitter Turn-On Voltage IC = 1A VCE = 2V* 0.95 1.2 IC = 50mA VCE = 2V* 70 200 IC = 500mA VCE = 2V* 100 200 IC = 1A VCE = 2V* 55 110 IC = 2A VCE = 2V* 25 55 HFE DC Current Gain µA 300 V — * Pulse test tp = 300ms , δ ≤ 2% DYNAMIC CHARACTERISTICS Parameter (TA = 25°C unless otherwise stated) Test Conditions fT Transition Frequency IC = 100mA VCE = 5V Cobo Output Capacitance VCB = 10V f = 1.0MHz Ton Switching Times IC = 500mA VCC = 10V Toff Switching Times IB1=IB2=50mA f = 100MHz Min. Typ. Max. Unit 140 175 MHz 30 80 1200 pF ns Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 2836 Issue 1 ZTX653DCSM ZTX753DCSM ZTX753 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. V(BR)CBO Collector – Base Breakdown Voltage IC = -100µA -120 V(BR)CEO Collector – Emitter Breakdown Voltage IC = -10mA -100 V(BR)EBO Emitter – Base Breakdown Voltage ICBO Collector – Cut-off Current IEBO Emitter Cut-off Current IE = -100µA Max. Unit V -5 VCB = -100V -0.1 TC = 100°C -10 VEB = -4V IC = -500mA VCE(sat) Typ. -0.1 IB = -50mA* -0.2 -0.3 Collector – Emitter Saturation Voltage IC = -1A IB = -100mA* -0.35 -0.5 IC = -2A IB = -200mA* -0.8 -1.0 VBE(sat) Base – Emitter Saturation Voltage IC = -1A IB = -100mA* -1.0 -1.3 VBE(on) Base – Emitter Turn-On Voltage IC = -1A VCE = -2V* -0.95 -1.2 IC = -50mA VCE = -2V* 70 200 IC = -500mA VCE = -2V* 100 200 IC = -1A VCE = -2V* 55 110 IC = -2A VCE = -2V* 25 55 HFE DC Current Gain µA 300 V — * Pulse test tp = 300ms , δ ≤ 2% DYNAMIC CHARACTERISTICS Parameter (TA = 25°C unless otherwise stated) Test Conditions f = 100MHz Min. Typ. Max. Unit 100 140 MHz fT Transition Frequency IC = -100mA VCE = -5V Cobo Output Capacitance VCB = -10V f = 1.0MHz Ton Switching Times IC = -500mA VCC = -10V 40 Toff Switching Times IB1=IB2=-50mA 600 30 pF ns Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 2836 Issue 1