PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ZTX776 ISSUE 1 JULY 94 FEATURES * 200 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt C B REFER TO ZTX755 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -200 V Collector-Emitter Voltage VCEO -200 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Power Dissipation at Tamb=25°C derate above Tamb=25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -200 MAX. V IC=-100µ A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -200 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A, IC=0 Collector Cut-Off Current ICBO -100 nA VCB=-160V, IE=0 Emitter Cut-Off Current IEBO -100 nA VEB=-4V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) -0.5 -0.5 V V IC=-500mA, IB=-50mA* IC=-1A, IB=-200mA* Base-Emitter Saturation Voltage VBE(sat) -1.1 V IC=-500mA, IB=-50mA* Base-Emitter Turn-On Voltage VBE(on) -1.0 V IC=-500mA, VCE=-5V* Static Forward Current Transfer Ratio hFE 50 50 20 Transition Frequency fT 30 Output Capacitance Cobo IC=-10mA, VCE=-5V IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V* 20 MHz IC=-10mA, VCE=-20V f=20MHz pF VCB=-20V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-270