PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX948 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE MIN. TYP. MAX. UNIT CONDITIONS. -860 -1000 mV IC=-5A, VCE=-1V* 200 200 160 130 40 100 100 75 60 15 IC=-10mA, VCE=-1V IC=-1A, VCE=-1V* IC=-5A, VCE=-1V* IC=-10A, VCE=-1V* IC=-20A, VCE=-1V* 300 Transition Frequency fT 80 MHz IC=-100mA, VCE=-10V f=50MHz Output Capacitance Cobo 163 pF VCB=-10V, f=1MHz Switching Times ton toff 120 126 ns ns IC=-4A, IB1=-400mA IB2=400mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. UNIT Rth(j-amb) Rth(j-case) 150 50 °C/W °C/W Thermal Resistance: Junction to Ambient Junction to Case ZTX948 ISSUE 2 JUNE 94 FEATURES * 4.5 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * Excellent gain up to 20 Amps * Very low leakage * Exceptional gain linearity down to 10mA * Spice model available C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO -40 Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -6 V A Peak Pulse Current ICM -20 Continuous Collector Current IC -4.5 A Practical Power Dissipation* Ptotp 1.58 W Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1.2 W -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum 4.0 3.0 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) Ca se 2.0 te m pe ra tu re Amb ient te mpe ratu 1.0 -40 -20 0 20 40 re 60 80 100 120 140 160 180 200 SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -40 -55 V IC=-100µA Collector-Emitter Breakdown Voltag V(BR)CER -40 -55 V IC=-1µA, RB ≤1KΩ Collector-Emitter Breakdown Voltage V(BR)CEO -20 -30 V IC=-10mA* D=0.6 Emitter-Base Breakdown Voltage V(BR)EBO -6 -8 V IE=-100µA D=0.2 Collector Cut-Off Current ICBO -50 -1 µA nA VCB=-30V VCB=-30V, Tamb=100°C Collector Cut-Off Current ICER R ≤1KΩ -50 -1 µA nA VCB=-30V VCB=-30V, Tamb=100°C Emitter Cut-Off Current IEBO -10 nA VEB=-6V Collector-Emitter Saturation Voltage VCE(sat) -45 -90 -180 -230 -100 -150 -250 -310 mV mV mV mV IC=-0.5A, IB=-10mA* IC=-2A, IB=-200mA* IC=-4A, IB=-400mA* IC=-5A, IB=-300mA* Base-Emitter Saturation Voltage VBE(sat) -960 -1100 mV IC=-5A, IB=-300mA* D.C. 150 t1 100 PARAMETER D=t1/tP tP 50 D=0.1 0 0.0001 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-310 3-309 MAX. PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX948 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE MIN. TYP. MAX. UNIT CONDITIONS. -860 -1000 mV IC=-5A, VCE=-1V* 200 200 160 130 40 100 100 75 60 15 IC=-10mA, VCE=-1V IC=-1A, VCE=-1V* IC=-5A, VCE=-1V* IC=-10A, VCE=-1V* IC=-20A, VCE=-1V* 300 Transition Frequency fT 80 MHz IC=-100mA, VCE=-10V f=50MHz Output Capacitance Cobo 163 pF VCB=-10V, f=1MHz Switching Times ton toff 120 126 ns ns IC=-4A, IB1=-400mA IB2=400mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. UNIT Rth(j-amb) Rth(j-case) 150 50 °C/W °C/W Thermal Resistance: Junction to Ambient Junction to Case ZTX948 ISSUE 2 JUNE 94 FEATURES * 4.5 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * Excellent gain up to 20 Amps * Very low leakage * Exceptional gain linearity down to 10mA * Spice model available C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO -40 Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -6 V A Peak Pulse Current ICM -20 Continuous Collector Current IC -4.5 A Practical Power Dissipation* Ptotp 1.58 W Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1.2 W -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum 4.0 3.0 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) Ca se 2.0 te m pe ra tu re Amb ient te mpe ratu 1.0 -40 -20 0 20 40 re 60 80 100 120 140 160 180 200 SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -40 -55 V IC=-100µA Collector-Emitter Breakdown Voltag V(BR)CER -40 -55 V IC=-1µA, RB ≤1KΩ Collector-Emitter Breakdown Voltage V(BR)CEO -20 -30 V IC=-10mA* D=0.6 Emitter-Base Breakdown Voltage V(BR)EBO -6 -8 V IE=-100µA D=0.2 Collector Cut-Off Current ICBO -50 -1 µA nA VCB=-30V VCB=-30V, Tamb=100°C Collector Cut-Off Current ICER R ≤1KΩ -50 -1 µA nA VCB=-30V VCB=-30V, Tamb=100°C Emitter Cut-Off Current IEBO -10 nA VEB=-6V Collector-Emitter Saturation Voltage VCE(sat) -45 -90 -180 -230 -100 -150 -250 -310 mV mV mV mV IC=-0.5A, IB=-10mA* IC=-2A, IB=-200mA* IC=-4A, IB=-400mA* IC=-5A, IB=-300mA* Base-Emitter Saturation Voltage VBE(sat) -960 -1100 mV IC=-5A, IB=-300mA* D.C. 150 t1 100 PARAMETER D=t1/tP tP 50 D=0.1 0 0.0001 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-310 3-309 MAX. ZTX948 TYPICAL CHARACTERISTICS IC/IB=50 1.4 Tamb=25°C -55°C +25°C +175°C 1.6 IC/IB=10 VCE(sat) - (Volts) VCE(sat) - (Volts) 1.6 1.2 1.0 0.8 0.6 0.4 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.2 0 0 0.001 0.01 0.1 1 10 20 0.001 IC - Collector Current (Amps) 0.01 VCE=1V 1.0 200 0.8 0.6 100 0.4 VBE(sat) - (Volts) 1.2 1.4 10 20 0.2 IC/IB=10 1.2 1.0 0.8 0.6 0.4 0.2 0.001 0.01 0.1 0 10 20 1 0.001 1.4 0.1 1 IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C IC - Collector Current (Amps) 1.6 0.01 IC - Collector Current (Amps) 100 VBE - (Volts) -55°C +25°C +100°C +175°C 1.6 300 hFE - Typical Gain hFE - Normalised Gain 1.4 1 VCE(sat) v IC +100°C +25°C -55°C 1.6 0.1 IC - Collector Current (Amps) VCE(sat) v IC 0 IC/IB=10 VCE=1V 1.2 1.0 0.8 0.6 0.4 0.2 10 20 Single Pulse Test at Tamb=25°C 10 1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0 0.001 0.01 0.1 1 10 20 0.1 0.1 1 10 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-311 100