Super323 SOT323 NPN SILICON POWER(SWITCHING) TRANSISTOR ZUMT618 ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION * * * * IC CONT 1.25A 3A Peak Pulse Current Excellent HFE Characteristics Up to 3A (pulsed) Extremely Low Equivalent On Resistance; RCE(sat) APPLICATIONS * Corded telecoms. * Boost functions in DC-DC converters * Motor driver functions DEVICE TYPE COMPLEMENT PARTMARKING RCE(sat) ZUMT618 ZUMT718 T62 125mΩ at1.25A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 20 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current** ICM 4 A Continuous Collector Current IC 1.25 A Base Current IB 500 mA Power Dissipation at Tamb=25°C Ptot 385 † 500 ‡ mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C † Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air). ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers. ZUMT618 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS. 20 V IC= 100µA V(BR)CEO 20 V IC= 10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE= 100µA Collector Cut-Off Current ICBO 10 nA VCB= 16V Emitter Cut-Off Current IEBO 10 nA VEB= 4V Collector Emitter Cut-Off Current ICES 10 nA VCES= 16V Collector-Emitter Saturation Voltage VCE(sat) 16.5 40 80 140 155 25 60 115 200 250 mV mV mV mV mV IC= 100mA, IB=10mA* IC= 250mA, IB= 10mA* IC= 500mA, IB=10mA* IC= 1A, IB=20mA* IC= 1.25A, IB=50mA* Base-Emitter Saturation Voltage VBE(sat) 955 1100 mV IC= 1.25A, IB=50mA* Base-Emitter Turn-On Voltage VBE(on) 840 1100 mV IC= 1.25A, VCE= 2V* Static Forward Current Transfer Ratio hFE Transition Frequency fT 210 MHz IC= 50mA, VCE=10V f= 100MHz Output Capacitance Cobo 10 pF VCB= 10V, f=1MHz Turn-On Time t(on) 50 ns Turn-Off Time t(off) 275 ns VCC=10 V, IC=1A IB1=IB2=100mA 200 300 200 100 40 20 TYP. MAX. IC= 10mA, VCE= 2V* IC= 100mA, VCE= 2V* IC= 500mA, VCE=2V* IC= 1A, VCE=2 V* IC= 2A, VCE=2V* IC=4A, VCE= 2V* 420 450 380 300 180 60 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% ZUMT618 TYPICAL CHARACTERISTICS 0.4 0.4 +25°C IC/IB=50 0.3 IC/IB=10 IC/IB=50 IC/IB=100 VCE(sat) - (V) VCE(sat) - (V) 0.3 0.2 0.1 0 -55°C +25°C +100°C +150°C 0.2 0.1 1m 10m 100m 1 0 10 10m 1m IC - Collector Current (A) VCE(sat) v IC VCE=2V 10 +100°C 0.8 400 VBE(sat) - (V) hFE - Typical Gain 1 IC/IB=50 1.0 600 +25°C -55°C 200 0.6 0.4 -55°C +25°C +100°C +150°C 0.2 0 0 1m 10m 100m 1 10 1m IC - Collector Current (A) hFE v IC 100m 1 10 10 IC - Collector Current (A) 0.8 0.6 0.4 -55°C +25°C +100°C +150°C 0.2 0 1m 10m IC - Collector Current (A) VBE(sat) v IC 1.0 VBE(on) - (V) 100m IC - Collector Current (A) VCE(sat) v IC 10m 100m 1 IC - Collector Current (A) VBE(on) v IC 10 1 100m 10m 100m DC 1s 100ms 10ms 1ms 100µs 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area 100