SOT323 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 – FEBRUARY 1999 PARTMARKING DETAILS COMPLEMENTARY TYPES ZUMT807-25 ZUMT807-40 ZUMT807-25 - T8 ZUMT807-40 - T24 ZUMT807-25 - ZUMT817-25 ZUMT807-40 - ZUMT817-40 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -50 V Collector-Emitter Voltage V CEO -45 V Emitter-Base Voltage V EBO -5 V Peak Pulse Current I CM -1 A Continuous Collector Current IC -500 mA Base Current IB -100 mA Peak Base Current I BM -200 mA Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range T j:T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector Cut-Off Current I CBO -0.1 -5 A A V CB=-20V, I E=0 V CB=-20V, I E=0, T amb=150°C Emitter Cut-Off Current I EBO -10 A V EB=-5V, I C=0 Collector-Emitter Saturation Voltage V CE(sat) -700 mV I C=-500mA, I B=-50mA* Base-Emitter Turn-on Voltage V BE(on) -1.2 V I C=-500mA, V CE=-1V* Static Forward Current Transfer Ratio h FE 100 40 600 I C=-100mA, V CE=-1V* I C=-500mA, V CE=-1V* -25 160 400 I C=-100mA, V CE=-1V* -40 250 600 I C=-100mA, V CE=-1V* Transition Frequency fT 100 MHz I C=-10mA, V CE=-5V f=35MHz Collector-base Capacitance C obo 8.0 pF I E=I e=0, V CB=-10V f=1MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%