SOT323 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZUMT817-25 ZUMT817-40 ISSUE 2 – FEBRUARY 1999 PARTMARKING DETAILS COMPLEMENTARY TYPES ZUMT817-25 - T7 ZUMT817-40 - T23 ZUMT817-25 - ZUMT807-25 ZUMT817-40 - ZUMT807-40– T7 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 1 A Continuous Collector Current IC 500 mA Base Current IB 100 mA Peak Base Current IBM 200 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL Collector Cut-Off Current ICBO 0.1 5 Emitter Cut-Off Current IEBO 10 A VEB=5V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 700 mV IC=500mA, IB=50mA* Base-Emitter Turn-on Voltage VBE(on) 1.2 V IC=500mA, VCE=1V* Static Forward Current Transfer Ratio hFE -25 -40 MIN. TYP. MAX. UNIT CONDITIONS. A A VCB=20V, IE=0 VCB=20V, IE=0, Tamb=150°C 100 40 600 IC=100mA, VCE=1V* IC=500mA, VCE=1V* 160 400 IC=100mA, VCE=1V* 250 IC=100mA, VCE=1V* 600 Transition Frequency fT 200 MHz IC=10mA, VCE=5V f=35MHz Collector-base Capacitance Cobo 5.0 pF IE=Ie=0, VCB=10V f=1MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%