830 SERIES SILICON 25V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature surface mount packages. Features SOT23 SOT323 SOD523 SOD323 · Close tolerance C-V characteristics · High tuning ratio · Low IR (typically 200pA) · Excellent phase noise performance · High Q · Range of miniature surface mount packages Applications · VCXO and TCXO · Wireless communications · Pagers · Mobile radio *Where steeper CV slopes are required there is the 12V hyperabrupt range. ZC930, ZMV930, ZV930, ZV931 Series ISSUE 8 - MARCH 2005 1 SEMICONDUCTORS 830 SERIES TUNING CHARACTERISTICS at Tamb = 25°C PART Capacitance (pF) Min Q Capacitance Ratio V R =2V, f=1MHz V R =3V C 2 / C 20 at f=1MHz f=50MHz MIN. NOM. MAX. MIN. MAX. 829A 7.38 8.2 9.02 250 4.3 5.8 829B 7.79 8.2 8.61 250 4.3 5.8 830A 9.0 10.0 11.0 300 4.5 6.0 830B 9.5 10.0 10.5 300 4.5 6.0 831A 13.5 15.0 16.5 300 4.5 6.0 831B 14.25 15.0 15.75 300 4.5 6.0 832A 19.8 22.0 24.2 200 5.0 6.5 832B 20.9 22.0 23.1 200 5.0 6.5 833A 29.7 33.0 36.3 200 5.0 6.5 833B 31.35 33.0 34.65 200 5.0 6.5 834A 42.3 47.0 51.7 200 5.0 6.5 834B 44.65 47.0 49.35 200 5.0 6.5 835A 61.2 68.0 74.8 100 5.0 6.5 835B 64.6 68.0 71.4 100 5.0 6.5 836A 90.0 100.0 110.0 100 5.0 6.5 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL MAX UNIT IF 200 mA Power dissipation at T amb = 25⬚C SOT23 P tot 330 mW Power dissipation at T amb = 25⬚C SOD323 P tot 330 mW Power dissipation at T amb = 25⬚C SOD523 Operating and storage temperature range P tot 250 mW -55 to +150 ⬚C Forward current ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER CONDITIONS MIN. Reverse breakdown voltage I R = 10uA 25 Reverse voltage leakage Temperature coefficient of capacitance TYP. MAX. UNIT V R = 20V 0.2 20 nA V R = 3V, f = 1MHz 300 400 ppCm/⬚C V ISSUE 8 - MARCH 2005 SEMICONDUCTORS 2 830 SERIES TYPICAL CHARACTERISTICS ISSUE 8 - MARCH 2005 3 SEMICONDUCTORS SEMICONDUCTORS 4 J6A J6B ZC835ATA ZC835BTA CG AG CF AF CE AE CD AD CC AC CB AB CA AA PART MARK ZV832BV2TA ZV831BV2TA ORDER CODE SOD523 82 81 PART MARK ZDC834ATA ZDC833ATA ORDER CODE SOT23 C5A C2A PART MARK QUANTITY PER REEL 3000 10000 TAPE WIDTH 8mm 8mm REEL SIZE 7 inch (180mm) 13 inch (330mm) REEL CODE TA TC The order codes are shown as TA which is for 7 inch reels. For 13 inch reels substitute TC in place of TA in the order code. TAPE AND REEL INFORMATION ZMV835BTA ZMV835ATA ZMV834BTA J5B ZC834BTA ZMV833BTA ZMV834ATA ZMV832BTA ZMV833ATA J4B J2A ZC832BTA ZC833ATA J2B ZMV831BTA ZMV832ATA J3B J4A ZC831BTA ZC832ATA J5A ZMV830BTA ZMV831ATA J1B J3A ZC830BTA ZC831ATA ZC833BTA ZMV829BTA ZMV830ATA J9B J1A ZC829BTA ZC830ATA ZC834ATA ZMV829ATA J9A ZC829ATA ORDER CODE PART MARK SOD323 ORDER CODE SOT23 ORDER CODES AND PART MARKING ZMDC832BTA ZMDC831BTA ORDER CODE SOT323 CD CC PART MARK 830 SERIES ISSUE 8 - MARCH 2005 830 SERIES SOT23 PACKAGE DIMENSIONS DIM Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059 G NOM 1.9 NOM 0.075 K 0.01 0.10 0.0004 0.004 L 2.10 2.50 0.0825 0.0985 SOT323 PACKAGE DIMENSIONS DIM Millimeters Inches Min Max Min Max A 0.91 1.16 0.036 0.046 B 0.0 0.1 0.0 0.004 D 0.33 0.4 0.013 0.016 E 0.127 0.2 0.005 0.008 F 1.52 1.77 0.060 0.070 G 1.11 1.37 0.044 0.054 ISSUE 8 - MARCH 2005 5 SEMICONDUCTORS 830 SERIES SOD523 PACKAGE DIMENSIONS Millimeters Inches DIM Min Max Min Max A – 0.800 – 0.0314 A1 0.000 0.100 0.000 0.0039 A2 0.600 0.800 0.0236 0.0314 b1 0.160 0.300 0.0062 0.0118 c 0.080 0.220 0.0031 0.0086 D 0.700 0.900 0.0275 0.0354 E 1.500 1.700 0.0590 0.0669 E1 1.100 1.300 0.0433 0.0511 L 0.200 0.400 0.0078 0.0157 L1 0.170 0.230 0.0066 0.0090 ⍜1⬚ 4 10 4⬚ 10⬚ DIM Millimeters SOD323 PACKAGE DIMENSIONS Inches Min Max Min Max A 1.8 2.2 0.071 0.087 B 1.15 1.35 0.045 0.053 C 0.8 1.0 0.031 0.039 D 0.2 0.4 0.008 0.016 F 0.1 0.25 0.004 0.01 G 1.2 1.4 0.047 0.055 © Zetex Semiconductors plc 2004 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 8 - MARCH 2005 SEMICONDUCTORS 6