SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2106G ISSUE 3 – NOVEMBER 1995 FEATURES * 60 Volt VDS * RDS(on)=2Ω VGS= 10V 9V 3 8V 7V 2 6V 5V 1 4V 3V 0 0 1 2 3 4 VDD= 20V 30V 50V 16 VGS-Gate Source Voltage (Volts) ID(On) -On-State Drain Current (Amps) TYPICAL CHARACTERISTICS 4 S COMPLEMENTARY TYPE PARTMARKING DETAIL - 10 ABSOLUTE MAXIMUM RATINGS. 4 2 0 0.5 1.0 1.5 RDS(ON) -Drain Source On-Resistance (Ω) C-Capacitance (pF) Ciss Coss 20 Crss 10 20 40 30 3.0 50 10 ID= 1A 0.5A 0.25A 1 1 Capacitance v drain-source voltage 10 On-resistance v gate-source voltage 1.8 1.6 1.4 ain Dr 1.2 o -S ur R ce is es n ta ce gfs-Transconductance (S) 2.0 ) on S( RD VGS=10V ID=1A VGS=VDS ID=1mA 1.0 0.8 Gate Thresh old 0.6 0.4 -80 -60 -40 -20 Voltage VGS (th) 0.6 0.5 0.4 VDS=10V 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 0 Tj-Junction Temperature (C°) 1 2 3 4 5 ID- Drain Current (Amps) Normalised RDS(on) and VGS(th) v Temperature 3 - 386 VALUE UNIT V DS 60 V Continuous Drain Current at T amb=25°C ID 710 mA Pulsed Drain Current I DM 8 A Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 2.0 W Operating and Storage Temperature Range T j :T stg -55 to +150 °C PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage V GS(th) 0.8 Gate-Body Leakage Zero Gate Voltage Drain Current V I D=1mA, V GS=0V 2.4 V I D =1mA, V DS= V GS I GSS 20 nA V GS=± 20V, V DS=0V I DSS 500 100 nA µA V DS=60 V, V GS=0 V DS=48 V, V GS=0V, T=125°C (2) 20 0.7 2.2 SYMBOL Drain-Source Voltage 0.1 VGS-Gate Source Voltage (Volts) 2.4 PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VDS-Drain Source Voltage (Volts) Normalised RDS(on) and VGS(th) 2.5 Gate charge v gate-source voltage Saturation Characteristics 0 2.0 Q-Charge (nC) 40 D G 6 VDS - Drain Source Voltage (Volts) 60 ZVP2106G ZVN2106 8 0 80 D ID=3A 14 12 5 100 ZVN2106G On-State Drain Current (1) I D(on) Static Drain-Source On-State Resistance (1) R DS(on) 2 A V DS=18V, V GS=10V 2 Ω V GS=10V,I D=1A mS V DS=18V,I D=1A Forward Transconductance (1)(2) g fs Input Capacitance (2) C iss 75 pF Common Source Output Capacitance (2) C oss 45 pF 300 ReverseTransfer Capacitance(2) C rss 20 pF Turn-On Delay Time (2)(3) t d(on) 7 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) t d(off) 12 ns Fall Time (2)(3) tf 15 ns V DS=18 V, V GS=0V, f=1MHz V DD ≈18V, I D=1A (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device Transconductance v drain current 3 - 385 SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2106G ISSUE 3 – NOVEMBER 1995 FEATURES * 60 Volt VDS * RDS(on)=2Ω VGS= 10V 9V 3 8V 7V 2 6V 5V 1 4V 3V 0 0 1 2 3 4 VDD= 20V 30V 50V 16 VGS-Gate Source Voltage (Volts) ID(On) -On-State Drain Current (Amps) TYPICAL CHARACTERISTICS 4 S COMPLEMENTARY TYPE PARTMARKING DETAIL - 10 ABSOLUTE MAXIMUM RATINGS. 4 2 0 0.5 1.0 1.5 RDS(ON) -Drain Source On-Resistance (Ω) C-Capacitance (pF) Ciss Coss 20 Crss 10 20 40 30 3.0 50 10 ID= 1A 0.5A 0.25A 1 1 Capacitance v drain-source voltage 10 On-resistance v gate-source voltage 1.8 1.6 1.4 ain Dr 1.2 o -S ur R ce is es n ta ce gfs-Transconductance (S) 2.0 ) on S( RD VGS=10V ID=1A VGS=VDS ID=1mA 1.0 0.8 Gate Thresh old 0.6 0.4 -80 -60 -40 -20 Voltage VGS (th) 0.6 0.5 0.4 VDS=10V 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 0 Tj-Junction Temperature (C°) 1 2 3 4 5 ID- Drain Current (Amps) Normalised RDS(on) and VGS(th) v Temperature 3 - 386 VALUE UNIT V DS 60 V Continuous Drain Current at T amb=25°C ID 710 mA Pulsed Drain Current I DM 8 A Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 2.0 W Operating and Storage Temperature Range T j :T stg -55 to +150 °C PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage V GS(th) 0.8 Gate-Body Leakage Zero Gate Voltage Drain Current V I D=1mA, V GS=0V 2.4 V I D =1mA, V DS= V GS I GSS 20 nA V GS=± 20V, V DS=0V I DSS 500 100 nA µA V DS=60 V, V GS=0 V DS=48 V, V GS=0V, T=125°C (2) 20 0.7 2.2 SYMBOL Drain-Source Voltage 0.1 VGS-Gate Source Voltage (Volts) 2.4 PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VDS-Drain Source Voltage (Volts) Normalised RDS(on) and VGS(th) 2.5 Gate charge v gate-source voltage Saturation Characteristics 0 2.0 Q-Charge (nC) 40 D G 6 VDS - Drain Source Voltage (Volts) 60 ZVP2106G ZVN2106 8 0 80 D ID=3A 14 12 5 100 ZVN2106G On-State Drain Current (1) I D(on) Static Drain-Source On-State Resistance (1) R DS(on) 2 A V DS=18V, V GS=10V 2 Ω V GS=10V,I D=1A mS V DS=18V,I D=1A Forward Transconductance (1)(2) g fs Input Capacitance (2) C iss 75 pF Common Source Output Capacitance (2) C oss 45 pF 300 ReverseTransfer Capacitance(2) C rss 20 pF Turn-On Delay Time (2)(3) t d(on) 7 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) t d(off) 12 ns Fall Time (2)(3) tf 15 ns V DS=18 V, V GS=0V, f=1MHz V DD ≈18V, I D=1A (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device Transconductance v drain current 3 - 385