SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - FEBRUARY 1996 FEATURES: * VDS - 200V * RDS(ON) - 10Ω ZVN2120G ✪ D S PARTMARKING DETAIL - ZVN2120 D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 200 V Continuous Drain Current at T amb=25°C ID 320 mA Pulsed Drain Current I DM 2 A Gate-Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 2 W Operating and Storage Temperature Range T j:T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS Gate-Source Threshold Voltage V GS(th) MAX. UNIT CONDITIONS. 200 I D=1mA, V GS=0V 3 V I D =1mA, V DS= V GS Gate-Body Leakage I GSS 20 nA V GS=± 20V, V DS=0V Zero Gate Voltage Drain Current I DSS 10 100 µA µA V DS=200V, V GS=0V V DS=160V, V GS=0V, T=125°C (2) On-State Drain Current(1) I D(on) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance(1)(2) g fs 1 V 500 10 100 mA V DS=25V, V GS=10V Ω V GS=10V, I D=250mA mS V DS=25V, I D=250mA Input Capacitance (2) C iss 85 pF Common Source Output Capacitance (2) C oss 20 pF Reverse Transfer Capacitance (2) Crss 7 pF Turn-On Delay Time (2)(3) t d(on) 8 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) t d(off) 20 ns Fall Time (2)(3) tf 12 ns V DS=25V, V GS=0V, f=1MHz V DD≈25V, I D=250mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 3 - 390 ZVN2120G ZVN2120G 5V 0.8 4V 0.4 3V 2V 0 0 10 20 30 40 50 VDS - Drain Source Voltage (Volts) 1.0 0.8 0.4 2V 0 12 ID= 1.0A 8 4 0.5A 0.1A 0 6 8 10 ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) 16 4 4 6 8 10 300 VDS=25V 200 100 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1.0 10V 0.8 0.6 0.4 0.2 3 4 5 6 7 8 9 10 VGS-Gate Source Voltage (Volts) Transfer Characteristics 80 60 Ciss 40 20 0 10 20 30 40 50 10 1 1 2 3 4 5 6 7 8 9 10 20 Normalised RDS(on) and VGS(th) ID= 1.0A 0.5A 0.1A VGS-Gate Source Voltage (Volts) On-resistance vs gate-source voltage S( 2.0 1.8 1.6 1.4 rc ou -S ain ist es eR ce an ) on VGS=10V ID=250mA Dr 1.0 VGS=VDS ID=1mA Gate Th reshold Voltage VGS(TH) 0.8 0.6 -40 -20 0 20 40 60 80 100 120 140 160 180 Tj-Junction Temperature (°C) Normalised RDS(on) and VGS(th) v Temperature 3 - 391 4 6 8 14 10 3 - 392 VDS= 50V ID=700mA 12 100V 10 150V 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Gate charge v gate-source voltage RD 1.2 2 Q-Charge (nC) VDS-Drain Source Voltage (Volts) Capacitance v drain-source voltage 2.4 2.2 0 Transconductance v gate-source voltage Coss Crss 2 100 16 0 1 200 VGS-Gate Source Voltage (Volts) 100 1.4 1.2 VDS=25V 300 0 Transconductance v drain current VDS= 25V 0 400 ID(on)- Drain Current (Amps) 1.6 VGS-Gate Source Voltage (Volts) 100 400 VDS - Drain Source Voltage (Volts) Voltage Saturation Characteristics RDS(ON) -Drain Source Resistance (Ω) 2 0 Saturation Characteristics 20 2 3V 0.2 Output Characteristics 0 4V 0.6 gfs-Transconductance (mS) 1.2 8V 7V 6V 5V 500 500 VGS= 10V C-Capacitance (pF) 1.6 1.4 1.2 VGS-Gate Source Voltage (Volts) VGS=10V 8V 7V 6V TYPICAL CHARACTERISTICS gfs-Transconductance (mS) 2.0 ID(on) -On-State Drain Current (Amps) ID(on) -On-State Drain Current (Amps) TYPICAL CHARACTERISTICS ZVN2120G ZVN2120G 5V 0.8 4V 0.4 3V 2V 0 0 10 20 30 40 50 VDS - Drain Source Voltage (Volts) 1.0 0.8 0.4 2V 0 12 ID= 1.0A 8 4 0.5A 0.1A 0 6 8 10 ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) 16 4 4 6 8 10 300 VDS=25V 200 100 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1.0 10V 0.8 0.6 0.4 0.2 3 4 5 6 7 8 9 10 VGS-Gate Source Voltage (Volts) Transfer Characteristics 80 60 Ciss 40 20 0 10 20 30 40 50 10 1 1 2 3 4 5 6 7 8 9 10 20 Normalised RDS(on) and VGS(th) ID= 1.0A 0.5A 0.1A VGS-Gate Source Voltage (Volts) On-resistance vs gate-source voltage S( 2.0 1.8 1.6 1.4 rc ou -S ain ist es eR ce an ) on VGS=10V ID=250mA Dr 1.0 VGS=VDS ID=1mA Gate Th reshold Voltage VGS(TH) 0.8 0.6 -40 -20 0 20 40 60 80 100 120 140 160 180 Tj-Junction Temperature (°C) Normalised RDS(on) and VGS(th) v Temperature 3 - 391 4 6 8 14 10 3 - 392 VDS= 50V ID=700mA 12 100V 10 150V 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Gate charge v gate-source voltage RD 1.2 2 Q-Charge (nC) VDS-Drain Source Voltage (Volts) Capacitance v drain-source voltage 2.4 2.2 0 Transconductance v gate-source voltage Coss Crss 2 100 16 0 1 200 VGS-Gate Source Voltage (Volts) 100 1.4 1.2 VDS=25V 300 0 Transconductance v drain current VDS= 25V 0 400 ID(on)- Drain Current (Amps) 1.6 VGS-Gate Source Voltage (Volts) 100 400 VDS - Drain Source Voltage (Volts) Voltage Saturation Characteristics RDS(ON) -Drain Source Resistance (Ω) 2 0 Saturation Characteristics 20 2 3V 0.2 Output Characteristics 0 4V 0.6 gfs-Transconductance (mS) 1.2 8V 7V 6V 5V 500 500 VGS= 10V C-Capacitance (pF) 1.6 1.4 1.2 VGS-Gate Source Voltage (Volts) VGS=10V 8V 7V 6V TYPICAL CHARACTERISTICS gfs-Transconductance (mS) 2.0 ID(on) -On-State Drain Current (Amps) ID(on) -On-State Drain Current (Amps) TYPICAL CHARACTERISTICS