DIODES ZVN4210A

ZVN4210A
RDS(on)-Drain Source On Resistance (Ω)
ID - Drain Current (Amps)
5
4
3
6V
5V
2
4V
3.5V
3V
2.5V
2V
10
1
0
0
1
2
3
4
5
6
7
8
9
VDS - Drain Source Voltage (Volts)
D
G
ABSOLUTE MAXIMUM RATINGS.
1
0.1
ID-Drain Current (Amps)
2.0
1.8
s
Re
1.6
ist
ce
an
RD
gfs-Transconductance (mS)
Normalised RDS(on) and VGS(th)
900
)
on
S(
2.2
VGS=10V
ID=1.5A
ce
ur
So
n
ai
VGS=VDS
Dr
Gate
ID=1mA
Thres
hold V
oltage
V
1.4
1.2
1.0
0.8
GS(TH
)
-50 -25
0
25 50 75 100 125 150 175 200 225
700
VDS=10V
600
500
400
300
200
0
0
120
80
Ciss
40
40
60
80
4
Drain-Source Voltage
V DS
100
V
Continuous Drain Current at T amb=25°C
ID
450
mA
Pulsed Drain Current
I DM
6
A
Gate-Source Voltage
V GS
± 20
V
Power Dissipation at T amb=25°C
P tot
700
mW
Operating and Storage Temperature Range
T j:T stg
-55 to +150
°C
Coss
Crss
100
VDS-Drain Source Voltage (Volts)
VDD=
20V 50V
80V
14
UNIT
Drain-Source Breakdown
Voltage
BV DSS
100
Gate-Source Threshold
Voltage
V GS(th)
0.8
Gate-Body Leakage
MAX. UNIT CONDITIONS.
V
I D=1mA, V GS=0V
2.4
V
ID=1mA, V DS= V GS
I GSS
100
nA
V GS=± 20V, V DS=0V
Zero Gate Voltage Drain
Current
I DSS
10
100
µA
µA
V DS=100V, V GS=0
V DS=80V, V GS=0V, T=125°C (2)
On-State Drain Current(1)
I D(on)
A
V DS=25V, V GS=10V
Static Drain-Source On-State
Resistance (1)
R DS(on)
Ω
V GS=10V,I D=1.5A
V GS=5V,I D=500mA
mS
V DS=25V,I D=1.5A
2.5
1.5
1.8
250
12
Input Capacitance (2)
C iss
100
pF
10
Common Source Output
Capacitance (2)
C oss
40
pF
Reverse Transfer Capacitance
(2)
C rss
12
pF
Turn-On Delay Time (2)(3)
t d(on)
4
ns
8
6
4
2
V DS=25V, V GS=0V, f=1MHz
0
0
1
2
3
4
5
Gate charge v gate-source voltage
3-389
SYMBOL MIN.
Forward Transconductance(1)(2 g fs
)
ID=1.5A
Q-Charge (nC)
Capacitance v drain-source voltage
PARAMETER
5
Transconductance v drain current
VGS-Gate Source Voltage (Volts)
160
20
3
2
1
16
200
VALUE
100
ID(on)- Drain Current (Amps)
Normalised RDS(on) and VGS(th) v Temperature
C-Capacitance (pF)
SYMBOL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
800
Tj-Junction Temperature (°C)
0
PARAMETER
1000
2.4
0
10
1.0
On-resistance v drain current
2.6
S
E-Line
TO92 Compatible
10
Saturation Characteristics
0.6
5V 6V 8V 10V
VGS=3V 3.5V
100
ZVN4210A
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt VDS
* RDS(on)= 1.5Ω
* Spice model available
TYPICAL CHARACTERISTICS
VGS=
10V
9V
8V
7V
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
6
Rise Time (2)(3)
tr
8
ns
Turn-Off Delay Time (2)(3)
t d(off)
20
ns
Fall Time (2)(3)
tf
30
ns
3-388
V DD ≈25V, I D=1.5A
ZVN4210A
RDS(on)-Drain Source On Resistance (Ω)
ID - Drain Current (Amps)
5
4
3
6V
5V
2
4V
3.5V
3V
2.5V
2V
10
1
0
0
1
2
3
4
5
6
7
8
9
VDS - Drain Source Voltage (Volts)
D
G
ABSOLUTE MAXIMUM RATINGS.
1
0.1
ID-Drain Current (Amps)
2.0
1.8
s
Re
1.6
ist
ce
an
RD
gfs-Transconductance (mS)
Normalised RDS(on) and VGS(th)
900
)
on
S(
2.2
VGS=10V
ID=1.5A
ce
ur
So
n
ai
VGS=VDS
Dr
Gate
ID=1mA
Thres
hold V
oltage
V
1.4
1.2
1.0
0.8
GS(TH
)
-50 -25
0
25 50 75 100 125 150 175 200 225
700
VDS=10V
600
500
400
300
200
0
0
120
80
Ciss
40
40
60
80
4
Drain-Source Voltage
V DS
100
V
Continuous Drain Current at T amb=25°C
ID
450
mA
Pulsed Drain Current
I DM
6
A
Gate-Source Voltage
V GS
± 20
V
Power Dissipation at T amb=25°C
P tot
700
mW
Operating and Storage Temperature Range
T j:T stg
-55 to +150
°C
Coss
Crss
100
VDS-Drain Source Voltage (Volts)
VDD=
20V 50V
80V
14
UNIT
Drain-Source Breakdown
Voltage
BV DSS
100
Gate-Source Threshold
Voltage
V GS(th)
0.8
Gate-Body Leakage
MAX. UNIT CONDITIONS.
V
I D=1mA, V GS=0V
2.4
V
ID=1mA, V DS= V GS
I GSS
100
nA
V GS=± 20V, V DS=0V
Zero Gate Voltage Drain
Current
I DSS
10
100
µA
µA
V DS=100V, V GS=0
V DS=80V, V GS=0V, T=125°C (2)
On-State Drain Current(1)
I D(on)
A
V DS=25V, V GS=10V
Static Drain-Source On-State
Resistance (1)
R DS(on)
Ω
V GS=10V,I D=1.5A
V GS=5V,I D=500mA
mS
V DS=25V,I D=1.5A
2.5
1.5
1.8
250
12
Input Capacitance (2)
C iss
100
pF
10
Common Source Output
Capacitance (2)
C oss
40
pF
Reverse Transfer Capacitance
(2)
C rss
12
pF
Turn-On Delay Time (2)(3)
t d(on)
4
ns
8
6
4
2
V DS=25V, V GS=0V, f=1MHz
0
0
1
2
3
4
5
Gate charge v gate-source voltage
3-389
SYMBOL MIN.
Forward Transconductance(1)(2 g fs
)
ID=1.5A
Q-Charge (nC)
Capacitance v drain-source voltage
PARAMETER
5
Transconductance v drain current
VGS-Gate Source Voltage (Volts)
160
20
3
2
1
16
200
VALUE
100
ID(on)- Drain Current (Amps)
Normalised RDS(on) and VGS(th) v Temperature
C-Capacitance (pF)
SYMBOL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
800
Tj-Junction Temperature (°C)
0
PARAMETER
1000
2.4
0
10
1.0
On-resistance v drain current
2.6
S
E-Line
TO92 Compatible
10
Saturation Characteristics
0.6
5V 6V 8V 10V
VGS=3V 3.5V
100
ZVN4210A
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt VDS
* RDS(on)= 1.5Ω
* Spice model available
TYPICAL CHARACTERISTICS
VGS=
10V
9V
8V
7V
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
6
Rise Time (2)(3)
tr
8
ns
Turn-Off Delay Time (2)(3)
t d(off)
20
ns
Fall Time (2)(3)
tf
30
ns
3-388
V DD ≈25V, I D=1.5A