ETC ZVN4306AV

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN4306AV
ISSUE 1 – FEBRUARY 95
FEATURES
* 60 Volt VDS
* RDS(on)= 0.33Ω
* Repetitive Avalanche Rating
D
G
APPLICATIONS
* Solenoids / relay drivers for automotive
* Stepper Motor Drivers
* DC-DC convertors
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V DS
60
V
Continuous Drain Current at T amb =25°C
ID
1.1
A
Practical Continuous Drain Current at
T amb =25°C
I DP
1.3
A
Pulsed Drain Current
I DM
15
A
Gate Source Voltage
V GS
± 20
V
Power Dissipation at T amb =25°C
P tot
850
mW
Practical Power Dissipation at T amb =25°C*
P totp
1.13
W
Avalanche Current-Repetitive
I AR
1
A
Avalanche Energy-Repetitive
E AR
25
mJ
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.
with copper equal to 1 inch square minimum
ZVN4306AV
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
Drain-Source
Breakdown Voltage
BV DSS
60
Gate-Source
Threshold Voltage
V GS(th)
1.3
Gate-Body Leakage
TYP.
MAX. UNIT CONDITIONS.
V
I D =1mA, V GS =0V
3
V
I D =1mA, V DS = V GS
I GSS
100
nA
V GS =± 20V, V DS =0V
Zero Gate Voltage
Drain Current
I DSS
10
100
µA
µA
V DS =60V, V GS =0
V DS =48V, V GS =0V, T=125°C (2)
On-State Drain
Current(1)
I D(on)
A
V DS =10V, V GS =10V
Static Drain-Source
On-State Resistance
(1)
R DS(on)
Ω
Ω
V GS =10V,I D =3A
V GS =5V, I D =1.5A
Forward
Transconductance
(1)(2)
g fs
mS
V DS =25V,I D =3A
Input Capacitance (2)
C iss
350
pF
Common Source
C oss
Output Capacitance (2)
140
pF
Reverse Transfer
Capacitance (2)
C rss
30
pF
Turn-On Delay Time
(2)(3)
t d(on)
8
ns
Rise Time (2)(3)
tr
25
ns
Turn-Off Delay Time
(2)(3)
t d(off)
30
ns
Fall Time (2)(3)
tf
16
ns
12
0.22
0.32
0.33
0.45
700
V DS =25 V, V GS =0V, f=1MHz
V DD ≈25V, V GEN =10V, I D =3A
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
ZVN4306AV
12
ID - Drain Current (Amps)
11
7V
10
9
8
7
6
5
6V
5V
4
3
2
1
4V
3.5V
3V
0
0
1
2
3
4
5
6
7
8
9
10
VDS - Drain Source Voltage (Volts)
RDS(on)-Drain Source On Resistance (Ω)
TYPICAL CHARACTERISTICS
VGS=
20V 12V 10V 9V 8V
Saturation Characteristics
3.5V
VGS=3V
5V 6V
10
1.0
8V
10V
0.1
0.1
1
100
10
ID-Drain Current (Amps)
On-resistance v drain current
2.4
VGS=10V
ID=3A
2.2
n)
(o
DS
2.0
1.8
1.6
1.4
ain
Dr
1.2
Re
ce
ur
So
eR
nc
ta
s
i
s
VGS=VDS
ID=1mA
1.0
0.8
0.6
Gate Threshold Voltage VGS(TH)
-50 -25 0 25 50 75 100 125 150 175 200 225
5
gfs-Transconductance (S)
Normalised RDS(on) and VGS(th)
2.6
4
3
VDS=10V
2
1
0
0
2
Tj-Junction Temperature (°C)
8
10
12
14
300
Ciss
Coss
Crss
0
0
10
20
30
40
50
60
70
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
80
VGS-Gate Source Voltage (Volts)
400
100
18
20
VDD=
20V
40V
60V
16
500
200
16
Transconductance v drain current
Normalised RDS(on) and VGS(th) v Temperature
C-Capacitance (pF)
6
4
ID(on)- Drain Current (Amps)
14
ID=3A
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10 11 12
Q-Charge (nC)
Gate charge v gate-source voltage
ZVN4306AV
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance:Junction to Ambient
Junction to Case
SYMBOL
MAX.
UNIT
Rth(j-amb)
Rth(j-case)
150
50
°C/W
°C/W
Thermal Resistance (°C/W)
1.0
0.75
Am
em
tt
en
bi
0.50
re
tu
ra
pe
0.25
150
D.C.
t1
100
tP
D=0.6
50
D=0.2
D=0.1
D=0.05
Single Pulse
0
-40
-20
0
20
40
60
80
D=t1/tP
0.0001
100 120 140 160
0.001
T -Temperature (°C)
Derating curve
0.8
15
0.6
10
0.4
5
0.2
0
25
50
75
100
125
1
10
100
Note: Unclamped Inductive Test
L=43mH, Vcc=12V
1.0
20
0
0.1
Maximum transient thermal impedance
Note: Unclamped Inductive Test
L=43mH, Vcc=12V
25
0.01
Pulse Width (seconds)
0
150
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
TJ - Junction Temperature (°C)
Maximum Repetitive Avalanche Energy
v Junction Temperature.
Maximum Repetitive Avalanche Current
v Junction Temperature
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Fax: (44)161-627 5467
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
Zetex plc 1997
Internet:
http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.