SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4306GV ISSUE 1 - APRIL 1998 FEATURES * BVDSS=60V * RDS(ON) = 0.33Ω * Repetitive Avalanche Rating APPLICATIONS * DC - DC Converters * Solenoids/Relay Drivers for Automotive * Stepper Motor Drivers PARTMARKING DETAIL - D S D G ZVN4306V ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE 60 UNIT V Continuous Drain Current at T amb=25°C ID 2.1 A Pulsed Drain Current I DM 15 A Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 3 W Avalanche Current-Repetitive I AR 1 A Avalanche Energy-Repetitive E AR 25 mJ Operating and Storage Temperature Range T j:T stg -55 to +150 °C ZVN4306GV ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage V GS(th) 1.3 Gate-Body Leakage TYP. MAX. UNIT CONDITIONS. V I D=1mA, V GS=0V 3 V I D =1mA, V DS= V GS I GSS 20 nA V GS=± 20V, V DS=0V Zero Gate Voltage Drain Current I DSS 10 100 µA µA V DS=60V, V GS=0V V DS=48V, V GS=0V, T=125°C (2) On-State Drain Current(1) I D(on) A V DS=10V, V GS=10V Static Drain-Source On-State Resistance (1) R DS(on) Ω Ω V GS=10V, I D=3A V GS=5V, I D=1.5A S V DS=25V,I D=3A g fs Forward Transconductance (1) 12 0.22 0.32 0.33 0.45 0.7 Input Capacitance (2) C iss 350 pF Common Source Output Capacitance (2) C oss 140 pF Reverse Transfer Capacitance (2) C rss 30 pF Turn-On Delay Time (2)(3) t d(on) 8 ns Rise Time (2)(3) tr 25 ns Turn-Off Delay Time (2)(3) t d(off) 30 ns Fall Time (2)(3) tf 16 ns V DS=25 V, V GS=0V, f=1MHz V DD ≈25V, V GEN=10V, I D=3A (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device ZVN4306GV 12 11 7V ID - Drain Current (Amps) 10 9 8 7 6 5 6V 5V 4 3 2 1 4V 3.5V 3V 0 0 1 2 3 4 5 6 7 8 9 10 VDS - Drain Source Voltage (Volts) RDS(on)-Drain Source On Resistance (Ω) TYPICAL CHARACTERISTICS VGS= 20V 12V 10V 9V 8V Saturation Characteristics VGS=3V 3.5V 5V 6V 10 1.0 8V 10V 0.1 0.1 1 100 10 ID-Drain Current (Amps) On-resistance v drain current 5 VGS=10V ID=3A 2.2 ) on S( 2.0 1.8 1.6 1.4 -S ain Dr 1.2 t sis Re ce r ou ce an RD VGS=VDS ID=1mA 1.0 0.8 0.6 Gate Threshold Voltage VGS(TH) -50 -25 0 25 50 75 100 125 150 175 200 225 gfs-Transconductance (S) Normalised RDS(on) and VGS(th) 2.6 2.4 4 3 VDS=10V 2 1 0 0 2 Tj-Junction Temperature (°C) 8 10 12 14 300 Ciss Coss Crss 0 0 10 20 30 40 50 60 70 VDS-Drain Source Voltage (Volts) Capacitance v drain-source voltage 80 VGS-Gate Source Voltage (Volts) 400 100 18 20 VDD= 20V 40V 60V 16 500 200 16 Transconductance v drain current Normalised RDS(on) and VGS(th) v Temperature C-Capacitance (pF) 6 4 ID(on)- Drain Current (Amps) 14 ID=3A 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 Q-Charge (nC) Gate charge v gate-source voltage ZVN4306GV