DIODES ZVN4424GTA

SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN4424G
ISSUE 4 - OCTOBER 1995
FEATURES
* 240 Volt BVDS
* Extremely low RDS(on)=4.3Ω
* Low threshold and Fast switching
APPLICATIONS
* Earth recall and dialling switches
* Electronic hook switches
* Battery powered equipment
* Telecoms and high voltage dc-dc convertors
PARTMARKING DETAILS COMPLEMENTARY TYPE -
D
S
D
G
ZVN4424
ZVP4424G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS
240
V
Continuous Drain Current at Tamb=25°C
ID
500
mA
Pulsed Drain Current
IDM
1.5
A
Gate Source Voltage
VGS
± 40
V
Power Dissipation at Tamb=25°C
Ptot
2.5
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
3 - 415
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN4424G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
Drain-Source Breakdown
Voltage
BVDSS
240
Gate-Source Threshold
Voltage
VGS(th)
0.8
Gate-Body Leakage
IGSS
TYP
1.3
MAX. UNIT
1.8
100
V
ID=1mA, VGS=0V
V
ID=1mA, VDS= VGS
nA
VGS=± 40V, VDS=0V
On State Drain-Current
ID(on)
Zero Gate Voltage Drain
Current
IDSS
Static Drain-Source
On-State Resistance
RDS(on)
Forward
Transconductance (1) (2)
gfs
Input Capacitance (2)
Ciss
110
200
pF
Common Source Output
Capacitance (2)
Coss
15
25
pF
Reverse Transfer
Capacitance (2)
Crss
3.5
15
pF
0.8
1.4
4
4.3
0.4
CONDITIONS.
ISSUE 4 - OCTOBER 1995
FEATURES
* 240 Volt BVDS
* Extremely low RDS(on)=4.3Ω
* Low threshold and Fast switching
APPLICATIONS
* Earth recall and dialling switches
* Electronic hook switches
* Battery powered equipment
* Telecoms and high voltage dc-dc convertors
A
VDS=10V, VGS=10V
10
100
µA
µA
VDS=240 V, VGS=0V
VDS=190 V, VGS=0V, T=125°C
PARTMARKING DETAILS COMPLEMENTARY TYPE -
5.5
6
Ω
Ω
VGS=10V,ID=500mA*
VGS=2.5V,ID=100mA*
ABSOLUTE MAXIMUM RATINGS.
S
VDS=10V,ID=0.5A
0.75
Turn-On Delay Time (2)(3)
td(on)
2.5
5
ns
Rise Time (2)(3)
tr
5
8
ns
Turn-Off Delay Time (2)(3)
td(off)
40
60
ns
Fall Time (2)(3)
tf
16
25
ns
VDS=25V, VGS=0V, f=1MHz
VDD ≈50V, ID =0.25A, VGEN=10V
D
S
D
G
ZVN4424
ZVP4424G
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS
240
V
Continuous Drain Current at Tamb=25°C
ID
500
mA
Pulsed Drain Current
IDM
1.5
A
Gate Source Voltage
VGS
± 40
V
Power Dissipation at Tamb=25°C
Ptot
2.5
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 416
ZVN4424G
3 - 415
ZVN4424G
ZVN4424G
TYPICAL CHARACTERISTICS
VGS=10V
1.0
3V
0.8
0.6
2.5V
0.4
2V
0.2
0
0
2
4
6
8
C-Capacitance (pF)
5V
4V
1.2
14
1.4
ID - Drain Current (Amps)
ID - Drain Current (Amps)
250
1.6
300µs Pulsed Test
1.4
1.2
1.0
0.8
300µs Pulsed Test
VDS=10V
0.6
0.4
0.2
200
Note:VGS=0V
150
Ciss
100
Coss
50
Crss
0
10
0
2
4
6
8
0
10
0.1
VGS - Gate Source Voltage (Volts)
VDS - Drain Source Voltage (Volts)
10
100
600
400
300µs Pulsed Test
VDS=10Vz
200
0
0.2
0.4
0.6
0.8
1.0
1.2
300µs Pulsed Test
VDS=10V
200
1.4
0
Transconductance v drain current
100
3
4
5
Transconductance v gate-source voltage
Normalised RDS(on) and VGS(th)
3V
10V
10
300µs Pulsed Test
1.0
0.1
2
2.4
VGS=2V
2.5V
0.01
1
VGS-Gate Source Voltage (Volts)
ID- Drain Current (Amps)
1.0
10
1.6
1.2
0.8
VGS=VDS
ID=1mA
0.4
0
-50
ID-Drain Current (Amps)
On-resistance vs Drain Current
VGS=10V
ID=0.5A
2.0
-25
0
25
50
75
100
125
150
Junction Temperature (°C)
Normalised RDS(on) and VGS(th) vs Temperature
3 - 417
8
6
4
2
0
2
4
6
8
10
12
14
16
18
Gate charge v gate-source voltage
0
0
Note:ID=400mA
10
Q-Gate Charge (nC)
Capacitance v drain-source voltage
600
400
VDD= 20V
50V
100V
12
0
800
gfs-Transconductance (mS)
gfs-Transconductance (mS)
800
1
VDS-Drain Source Voltage (Volts)
Transfer Characteristics
Saturation Characteristics
RDS(on)-Drain Source On Resistance (Ω)
VGS-Gate Source Voltage (Volts)
1.6
TYPICAL CHARACTERISTICS
3 - 418
20
ZVN4424G
ZVN4424G
TYPICAL CHARACTERISTICS
VGS=10V
1.0
3V
0.8
0.6
2.5V
0.4
2V
0.2
0
0
2
4
6
8
C-Capacitance (pF)
5V
4V
1.2
14
1.4
ID - Drain Current (Amps)
ID - Drain Current (Amps)
250
1.6
300µs Pulsed Test
1.4
1.2
1.0
0.8
300µs Pulsed Test
VDS=10V
0.6
0.4
0.2
200
Note:VGS=0V
150
Ciss
100
Coss
50
Crss
0
10
0
2
4
6
8
0
10
0.1
VGS - Gate Source Voltage (Volts)
VDS - Drain Source Voltage (Volts)
10
100
600
400
300µs Pulsed Test
VDS=10Vz
200
0
0.2
0.4
0.6
0.8
1.0
1.2
300µs Pulsed Test
VDS=10V
200
1.4
0
Transconductance v drain current
100
3
4
5
Transconductance v gate-source voltage
Normalised RDS(on) and VGS(th)
3V
10V
10
300µs Pulsed Test
1.0
0.1
2
2.4
VGS=2V
2.5V
0.01
1
VGS-Gate Source Voltage (Volts)
ID- Drain Current (Amps)
1.0
10
1.6
1.2
0.8
VGS=VDS
ID=1mA
0.4
0
-50
ID-Drain Current (Amps)
On-resistance vs Drain Current
VGS=10V
ID=0.5A
2.0
-25
0
25
50
75
100
125
150
Junction Temperature (°C)
Normalised RDS(on) and VGS(th) vs Temperature
3 - 417
8
6
4
2
0
2
4
6
8
10
12
14
16
18
Gate charge v gate-source voltage
0
0
Note:ID=400mA
10
Q-Gate Charge (nC)
Capacitance v drain-source voltage
600
400
VDD= 20V
50V
100V
12
0
800
gfs-Transconductance (mS)
gfs-Transconductance (mS)
800
1
VDS-Drain Source Voltage (Volts)
Transfer Characteristics
Saturation Characteristics
RDS(on)-Drain Source On Resistance (Ω)
VGS-Gate Source Voltage (Volts)
1.6
TYPICAL CHARACTERISTICS
3 - 418
20